Taiwan Semiconductor Manufacturing Comp. Ltd.

National Taiwan University

Tao Chou

Chee-Wee Liu

Hsin-Cheng Lin

Jih-Chao Chiu

A memory device includes a memory array, a first reference voltage circuit, a first read voltage control circuit and a first write voltage control circuit. The first reference voltage circuit is configured to provide a first reference voltage signal having a first voltage level to the memory array. The first read voltage control circuit is configured to adjust the first reference voltage signal to a second voltage level when the memory array is read. The first write voltage control circuit is configured to adjust the first reference voltage signal to a third voltage level when the memory array is written. The second voltage level is higher than the first voltage level, and the third voltage level is lower than the first voltage level.

Growing community of inventors

New Taipei, Taiwan

Tao Chou