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Hillsboro, OR, United States of America

Tanuj Trivedi

Average Co-Inventor Count = 7.48

ph-index = 1

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 3

Tanuj TrivediWalid M Hafez (13 patents)Tanuj TrivediRahul Ramaswamy (12 patents)Tanuj TrivediHsu-Yu Chang (12 patents)Tanuj TrivediTing Chang (12 patents)Tanuj TrivediJeong Dong Kim (11 patents)Tanuj TrivediBabak Fallahazad (11 patents)Tanuj TrivediNidhi Nidhi (9 patents)Tanuj TrivediChia-Hong Jan (1 patent)Tanuj TrivediAyan Kar (1 patent)Tanuj TrivediSairam Subramanian (1 patent)Tanuj TrivediBenjamin Orr (1 patent)Tanuj TrivediRohan K Bambery (1 patent)Tanuj TrivediDaniel B O'Brien (1 patent)Tanuj TrivediChristopher Alan Nolph (1 patent)Tanuj TrivediTanuj Trivedi (13 patents)Walid M HafezWalid M Hafez (169 patents)Rahul RamaswamyRahul Ramaswamy (45 patents)Hsu-Yu ChangHsu-Yu Chang (31 patents)Ting ChangTing Chang (19 patents)Jeong Dong KimJeong Dong Kim (11 patents)Babak FallahazadBabak Fallahazad (11 patents)Nidhi NidhiNidhi Nidhi (39 patents)Chia-Hong JanChia-Hong Jan (147 patents)Ayan KarAyan Kar (17 patents)Sairam SubramanianSairam Subramanian (16 patents)Benjamin OrrBenjamin Orr (7 patents)Rohan K BamberyRohan K Bambery (4 patents)Daniel B O'BrienDaniel B O'Brien (3 patents)Christopher Alan NolphChristopher Alan Nolph (1 patent)
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Inventor’s number of patents
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Strength of working relationships

Company Filing History:

1. Intel Corporation (13 from 54,664 patents)


13 patents:

1. 12453145 - Single gated 3D nanowire inverter for high density thick gate SoC applications

2. 12369358 - Co-integrated high performance nanoribbon transistors with high voltage thick gate finFET devices

3. 12349411 - Gate-all-around integrated circuit structures having dual nanoribbon channel structures

4. 12317585 - Adjacent gate-all-around integrated circuit structures having non-merged epitaxial source or drain regions

5. 12249622 - Nanoribbon thick gate devices with differential ribbon spacing and width for SOC applications

6. 12089411 - Self-aligned front-end charge trap flash memory cell and capacitor design for integrated high-density scaled devices

7. 12040395 - High voltage extended-drain MOS (EDMOS) nanowire transistors

8. 11996403 - ESD diode solution for nanoribbon architectures

9. 11862703 - Gate-all-around integrated circuit structures having dual nanoribbon channel structures

10. 11791380 - Single gated 3D nanowire inverter for high density thick gate SOC applications

11. 11581404 - Gate-all-around integrated circuit structures having depopulated channel structures

12. 11437483 - Gate-all-around integrated circuit structures having dual nanoribbon channel structures

13. 11094782 - Gate-all-around integrated circuit structures having depopulated channel structures

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12/5/2025
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