Honeywell G.m.b.h.

Tangshiun Yeh

Allan T Hurst, Jr

Lonny L Berg

William Frank Witcraft

Huang-Joung Chen

Paul W Cravens

Cheisan J Yue

Michael J Bohlinger

Jerry C Yue

A magnetoresistive memory array which has a row of active sense lines with each sense line including magnetoresistive bits and word lines extending over the bits. Each active sense line ending in a termination bit having a configuration selected to cause an adjacent bit to experience a magnetic field similar to that experienced by the remaining bits in the sense line. An inactive sense line located at each end of the row of active sense lines.

MRAM design to reduce dissimilar nearest neighbor effects

A method for manufacturing magnetoresistive sensors whereby a first determination of an anisotropy field of the magnetoresistive material is made and an annealing temperature is selected based on a desired final value of the anisotropy field.

Method of fabricating a magnetoresistive sensor

Magnetoresistive random access memory bit edges are magnetically hardened to prevent bit edge reversal.

Magnetic hardening of bit edges of magnetoresistive RAM

In a magnetoresistive random access memory device, a spacer material is deposited at the edges of a memory bit to maintain magnetization at the edges in a direction along the edges.

Method of making integrated spacer for magnetoresistive RAM

A process for forming a magnetoresistive bit and an interconnection to an underlying component forms a pattern in an amorphous dielectric overlying the magnetic materials. Portions of the magnetic materials are removed to form a bit having a smooth bit edge profile by ion milling. The bit has a bit end located over the underlying component. A second amorphous dielectric layer is deposited and etched at the bit end to form a via at the underlying component. Conventional first metal is used to form the interconnection.

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Saint Paul, MN, United States of America

Tangshiun Yeh