United Microelectronics Corp.

United Silicon Incorporated

Tang Yu

Cheng-Chieh Huang

Tse-Wei Liu

Eddie Chen

Li-Wu Tsao

Jen-Tsung Lin

Tsung-Hsien Han

Jumn-Min Fam

Tzung-Hua Ying

Yi-Chang Yang

A silicon oxide layer is formed on a semiconductor wafer by performing a high temperature oxidation (HTO) process using dichlorosilane (SiH Cl ) and nitrous oxide (N O), as reacting gases, having a flow rates with a ratio greater than 2:1, respectively. The reacting moles of dichlorosilane to nitrous oxide are in the proportion of 1:2.

Method of forming a silicon oxide layer

A method of increasing the selectivity of silicon nitride deposition. A substrate is provided. A silicon oxide layer is formed over a portion of the substrate. Ammonia NH is passed over the silicon oxide layer and the substrate surface for a definite period to perform a surface treatment. Silicon nitride is subsequently deposited over the substrate and the silicon oxide layer.

Method of increasing selectivity in silicon nitride deposition

A method of fabricating a dielectric layer is provided. A first oxide layer is formed on a polysilicon layer. A silicon-rich nitride layer is formed on a first oxide layer. A silicon-poor nitride layer is formed on the silicon-rich nitride layer. An oxidation step is performed on the silicon-poor nitride layer. A second oxide layer is formed on the silicon-poor nitride layer. The dielectric layer comprising a multiple nitride layer structure is formed.

Method of fabricating dielectric layer

A method for recycling monitoring control wafers includes cleaning the wafers after performing a sheet resistance (Rs) measurement on a bare silicon monitoring control wafer of an ion implanter, and then converting the wafer into a recyclable control wafer. A recyclable control wafer for a thermal wave (TW) measurement of destruction can be obtained by forming a screen layer on the wafer, performing a TW measurement, performing ion implantation by the monitoring recipe, performing TW measurement again, performing ion drive-in to drive implanted ions into the deeper areas of the substrate, removing the screen layer, and then forming another screen layer on the wafer to put the wafer into the recycling process of a TW measurement.

Method for recycling monitoring control wafers

A method for accurately determining a time to clean a LPCVD system is disclosed, in which gas flow readings of the gas supplying source from a mass flow meter (MFM) are recorded during the depositing process. The gas flow volume of the gas supplying source read from the MFM decreases as the congestion in the vacuum route of the LPCVD system increases. Based on the established relationship, an accurate time for cleaning the LPCVD system can be determined, so as to avoid product defects due to an excessive deposition.

Method of determining a time to clean a low pressure chemical vapor

A method of water mark inspection. By forming a pattern on a test wafer, the water mark formed thereon directly reflects the features of a wafer product to be evaluated. The water mark is formed by simulating fabrication process conditions of forming the wafer product of which the performance is to be evaluated. Thus, after scanning the water mark by a defect inspection machine, the performance of the wafer product is evaluated.

Growing community of inventors

Hsin-Chu Hsien, Taiwan

Tang Yu