Kyushu University

Fuji Electric Co., Ltd.

Gigaphoton Inc.

Tanemasa Asano

Hiroshi Ikenoue

Akihiro Ikeda

Osamu Wakabayashi

Haruo Nakazawa

Koh Yoshikawa

Kenichi Iguchi

Yasukazu Seki

Tomoyuki Ohkubo

The laser doping apparatus may irradiate a predetermined region of a semiconductor material with a pulse laser beam to perform doping. The laser doping apparatus may include: a solution supplying system configured to supply dopant-containing solution to the predetermined region, and a laser system including at least one laser device configured to output the pulse laser beam to be transmitted by the dopant-containing solution, and a time-domain pulse waveform changing apparatus configured to control a time-domain pulse waveform of the pulse laser beam.

Laser doping apparatus and laser doping method

Impurity elements are doped at a high concentration exceeding a thermodynamic equilibrium concentration into a solid material having an extremely small diffusion coefficient of the impurity element. A method for doping impurities includes steps for depositing source film made of material containing impurity elements with a film thickness on a surface of a solid target object (semiconductor substrate) made from the solid material. The film thickness is determined in consideration of irradiation time per light pulse and the energy density of the light pulse. The method also includes a step for irradiating the source film by the light pulse with the irradiation time and the energy density so as to dope the impurity elements into the target object at a concentration exceeding a thermodynamic equilibrium concentration.

Method for doping impurities, method for manufacturing semiconductor device

Growing community of inventors

Fukuoka, Japan

Tanemasa Asano