Bell Telephone Laboratories

Tan T Sheng

Chuan C Chang

Ashok K Sinha

Sheila Vaidya

Robert P Chang

Shohei Nakahara

Robert J McCoy

Felix Ermanis

James J Coleman

Aluminum electrically conducting patterns for integrated circuits are achieved with narrow lines and unexpectedly-high electromigration characteristics by making the crystal grains of the pattern into a chain-shaped structure with {111} orientation. A process for achieving the structure is also described.

Solid state device with conductors having chain-shaped grain structure

A semiconductor device with a low resistance ohmic contact, strongly adherent to the n-type surface of a body (11) of Group III-V compound semiconductor is obtained by a process including the sequential deposition of gold (13), tin (14) and gold (15) at a surface temperature of less than 200 degrees C followed by a heat treatment in a nonoxidizing atmosphere. This process has shown particular advantage when applied to aluminum containing compound semiconductors (e.g., gallium aluminum arsenide). For such use an initial deposition of aluminum (16) has proven particularly successful in producing consistently low resistance ohmic contacts. The invention has been used in the production of light emitting diodes.

Gold-tin-gold ohmic contact to N-type group III-V semiconductors

A method of fabricating gallium arsenide MOS devices with improved stoichiometric and electrical properties is disclosed. The device includes a gallium arsenide substrate overlaid with a native oxide and an aluminum oxide layer. The device is fabricated using a plasma oxidizing process.

Fabrication of gallium arsenide MOS devices

Growing community of inventors

Berkeley Heights, NJ, United States of America

Tan T Sheng