Samsung Electronics Co., Ltd.

Samsung Led Co., Ltd.

Sumitomo Electric Industries, Limited

Samsung Electro-mechanics Co., Ltd.

Tan Sakong

Ho-sun Paek

Suk Ho Yoon

Sung-nam Lee

Jeong Wook Lee

Joong-kon Son

Juhyun Kim

Youn-joon Sung

Do Young Rhee

Sang Don Lee

Yong Il Kim

Chul Min Kim

Kyoung-ho Ha

Ji Hye Yeon

Ho Sun Paek

Cheol Soo Sone

Tae-hoon Jang

Ki Sung Kim

Jonguk Seo

Keon Hun Lee

Byoung-kyun Kim

Jin-young Lim

Sung Tae Kim

Young Sun Kim

Je Won Kim

Han Kyu Seong

Joon-seop Kwak

Won-Seok Lee

Donggun Lee

Hyun Wook Shim

Joosung Kim

Han-youl Ryu

Ji Hwan Hwang

Jin Young Lim

Yongil Kim

Youn Joon Sung

Jong Uk Seo

Eun Deok Sim

Gibum Kim

Suhyun Jo

Jongin Yang

Youngjo Tak

Min-ho Yang

Sammook Kang

Chung Sun Lee

Jae-sung Hyun

Jong-hak Kim

Jong Hak Kim

Byoung Kyun Kim

A method of manufacturing a light emitting device package and a method of manufacturing a display panel, the method of manufacturing a light emitting device package including forming a semiconductor laminate on a substrate such that the semiconductor laminate has a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; separating the semiconductor laminate into semiconductor light emitters, separated from each other, by forming a trench having a predetermined depth in the substrate by etching through the semiconductor laminate in a direction of the first surface of the substrate; forming a molding that fills the trench and insulates the semiconductor light emitters from each other by applying a flexible insulating material to cover the semiconductor light emitters; forming grooves separated from each other by the molding and overlying to the semiconductor light emitters, respectively, by removing the substrate; and forming wavelength converters in the grooves.

Method of manufacturing light emitting device package and method of manufacturing display panel using the same

A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other, each of the plurality of light-emitting device structures including a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer on the active layer, a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer, and a partition wall structure between two adjacent light-emitting device structures of the plurality of light-emitting device structures, the partition wall structure defining a pixel space.

Semiconductor light-emitting device and method of fabricating the same

A semiconductor light emitting device includes a light emitting structure having a rod shape with first and second surfaces opposing each other and a side surface connected between the first and second surfaces, and including a first conductivity-type semiconductor providing the first surface, an active layer and a second conductivity-type semiconductor, a first electrode layer on a first region of the first surface of the light emitting structure and connected to the first conductivity-type semiconductor, the first region having a level that is vertically offset from a level of a second region adjacent thereto, and a second electrode layer connected to the second conductivity-type semiconductor.

Semiconductor light emitting device having a rod shape, and display apparatus including the same

Semiconductor light emitting devices and methods of fabricating the same are provided. The semiconductor light emitting device includes a light emitting structure, a first electrode, a first dielectric layer, a second electrode, and a vertical conductive pattern. The light emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked, and includes a first opening that penetrates the second semiconductor layer and the active layer, the first opening exposing the first semiconductor layer. The first electrode fills at least a portion of the first opening. The first dielectric layer is on the first electrode. The second electrode is on the light emitting structure and covers the first dielectric layer, the second electrode being electrically connected to the second semiconductor layer. The vertical conductive pattern surrounds outer lateral surfaces of the light emitting structure and is electrically connected to the first electrode.

Semiconductor light emitting device and method of fabricating the same

A light emitting device package includes: a plurality of light emitting structures, each having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; a common first electrode extended in parallel with first and second surfaces of the plurality of light emitting structures at a level different from levels of the first and second surfaces while connecting respective first conductivity-type semiconductor layers of the plurality of light emitting structures; a plurality of second electrodes connected to respective second conductivity-type semiconductor layers of the plurality of light emitting structures; a plurality of wavelength converters; and a molded portion having a partition wall structure separating the plurality of wavelength converters from each other, and including a material having a modulus lower than a modulus of the plurality of light emitting structures.

LED lighting device package and display panel using the same

A light emitting diode display device includes a display board comprising a plurality of unit pixels, a drive circuit board including a plurality of drive circuit regions corresponding to the plurality of unit pixels, and a plurality of bumps interposed between the plurality of unit pixels and the plurality of drive circuit regions. The plurality of unit pixels comprises a first unit pixel including a first P electrode. The plurality of drive circuit regions comprises a first drive circuit region corresponding to the first unit pixel and a first pad connected to a first drive transistor, the plurality of bumps includes a first solder in contact with the first pad, and a first bump on the first solder and including a first filler in contact with the first P electrode, the first solder includes at least one of tin and silver, and the first filler includes copper or nickel.

Light emitting diode display device

A light emitting diode display device is provided. The light emitting diode display device includes a first light emitting diode pixel including a first light emitting diode layer and a first color conversion material on the first light emitting diode layer, a second light emitting diode pixel including a second light emitting diode layer and a second color conversion material on the second light emitting diode layer, a separation film disposed between the first light emitting diode layer and the second light emitting diode layer and a partition disposed between the first color conversion material and the second color conversion material and including a partition material, wherein the first and second light emitting diode pixels are divided by the separation film and the partition, the partition is disposed on the separation film in alignment with the separation film such that the partition includes linear portions that extend in a first direction and the separation film includes linear portions that also extend in the first direction and vertically overlap the linear portions of the partition, and the partition material includes an insulating material different from silicon.

Light emitting diode display device with separation film and partition aligning to each other

A light-emitting device includes a light-emitting structure including a first-conductivity-type nitride semiconductor layer on a substrate, an active layer on the first-conductivity-type nitride semiconductor layer, and a second-conductivity-type nitride semiconductor layer on the active layer, and a buffer layer between the substrate and the light-emitting structure. The buffer layer includes a plurality of voids. The plurality of voids extend vertically into the buffer layer from a surface of the buffer layer. The surface of the buffer layer is proximate to the light-emitting structure. The plurality of voids have different horizontal sectional areas.

Light-emitting devices and methods of manufacturing the same

A semiconductor light emitting device includes a substrate formed of a first material; and a convex portion protruding from the substrate and including: a first layer formed of the first material as that of the substrate; and a second layer formed of a second material different from the first material and disposed on the first layer. A second height of the second layer is greater than a first height of the first layer.

Semiconductor light emitting device having convex portion made with different materials

A lighting system includes a lighting unit comprising at least one lighting device, a sensing unit configured to measure at least one of atmospheric temperature and humidity, a controlling unit configured to compare the at least one of the temperature and the humidity measured by the sensor unit with set values and determine a color temperature of the lighting unit as a result of the comparison, and a driving unit configured to drive to the lighting unit to have the determined color temperature.

Lighting system

A light-emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a plurality of V-pits. The light-emitting device further includes a layer-quality improvement layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a plurality of V-pits with substantially same size and shape as the plurality of V-pits of the active layer, wherein layer-quality improvement layer is a group III-V semiconductor layer including Al or In. Due to the improved layer quality, the luminescent quality of the light-emitting device is improved.

Light emitting device and method of manufacturing the same

A semiconductor light emitting device may include: a first conductivity type semiconductor layer; an active layer disposed on the first conductivity type semiconductor layer; an electron-blocking layer disposed on the active layer; a second conductivity type semiconductor layer disposed on the electron-blocking layer; and a hole-diffusion layer disposed between the electron-blocking layer and the second conductivity type semiconductor layer. The hole-diffusion layer may include three layers having different energy band gaps and different resistance levels and at least one of the three layers may contain Al. A composition of the Al may be lower in the at least one layer than in the electron-blocking layer.

Semiconductor light emitting device

Provided a method of manufacturing a semiconductor light emitting device, the method includes forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate. The forming of the light emitting structure includes: forming a protective layer after a portion of the light emitting structure is formed forming a sacrificial layer on the protective layer; and continuously forming a further portion of the light emitting structure on the sacrificial layer.

Method of manufacturing light emitting device

There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer.

Nitride semiconductor light emitting device

There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlInGaN, where 0&#x3c;x&#x3c;1, 0&#x3c;y&#x3c;1, and 0&#x3c;x+y&#x3c;1; a second barrier layer having an energy band higher than an energy band of the first barrier layer and including one of InGaN, where 0&#x3c;x&#x3c;0.2, and GaN; a well layer including InGaN, where 0&#x3c;x&#x3c;1; a third barrier layer including one of InGaN, where 0&#x3c;x&#x3c;0.2 and GaN; and a lattice mismatch relaxation layer including one of AlInGaN, where 0&#x3c;x&#x3c;1, 0&#x3c;y&#x3c;1, and 0&#x3c;x+y&#x3c;1, AlGaN, where 0&#x3c;x&#x3c;1, and GaN, the lattice mismatch relaxation layer having a lattice constant greater than a lattice constant of the well layer and smaller than a lattice constant of the p-type GaN-based semiconductor layer.

GaN-based semiconductor light emitting device

Growing community of inventors

Seoul, South Korea

Tan Sakong