Seagate Technology Incorporated

Tan Guo Liu

Kim Yang Lee

Thomas Young Chang

Zhu Feng

Chung Yuang Shih

Yautzong Hsu

Shuaigang Xiao

Vidya K Gubbi

Chiu-Shing Frank Poon

A first wafer has a first stop layer deposited on a substrate, the substrate used to form a base support structure. A second wafer has a second stop layer deposited on a sacrificial substrate, and a filter layer deposited on the second stop layer. A rib layer is deposited on one of: the first stop layer of the first layer; or a third stop layer that is deposited over the filter layer. A rib pattern is formed in the rib layer. The first and second wafers are flip bonded such that the rib pattern is joined between the filter layer and the first stop layer. Elongated voids are formed within the filter layer. The base support structure is formed within the substrate of the first wafer such that there is a fluid flow path between the base support structure, the rib layer, and the elongated voids of the filter layer.

High-flux efficiency filter fabrication using a flip bond process with supportive structure

Disclosed is anew technique for measuring the resistivity of ultra-thin carbon films (less than 200 &angst;). The technique involves using a probe with very smooth surface, a thin layer lubricant (20-30&angst;)that enables the intimate and stable electrical contact between probe and the thin film, and measurement of I-V curve to determine resistance. Resistivity measurements were conducted on carbon films doped with hydrogen and nitrogen at different mixture ratios and different thicknesses, and the results were compared with those obtained on a commercially available machine that uses a mercury probe. The advantages of the present technique include simple in use, less expensive and quick measurements with reasonably good accuracy.

Technique for measuring resistivity

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Tan Guo Liu