Fujitsu Corporation

Tamotsu Yamamoto

Tsutomu Tanaka

Satoru Watanabe

Hiroshi Horiuchi

Kenji Homma

Kensuke Yoshida

Masami Tsutsumi

Masaaki Sasa

Tsutomu Miyashita

Isao Watanabe

Yukio Takigawa

Tomochika Kurita

Osamu Tsuboi

Shigeru Suzuki

Motoshu Miyajima

Tetsuo Saito

Masaharu Hida

Hideki Kitada

Ikuo Soga

Nobuhiro Misawa

Tetsuya Shirasu

Toshiyuki Karasawa

Tsutomu Hosoda

Yoshiyuki Okura

Takahiro Kono

Kazuo Ozaki

Tetsuya Kochi

Kosaku Yamamoto

Hirofumi Watani

Kenji Nakano

Nobuaki Santo

Provided is a solid electrolyte including electrolyte particles, wherein each of the electrolyte particles includes at least one of an O&#x2014;S&#x2014;O structure and an O&#x2014;S&#x2014;OH structure.

Solid electrolyte and all-solid battery

A solid electrolyte including Li, Al, P, O, and N, wherein the solid electrolyte has a POstructure.

Solid electrolyte and all-solid-state battery

A solid electrolyte includes a particle having a first portion that includes, as constituent elements, lanthanum (La), lithium, titanium and oxygen, and a second portion that covers a surface of the first portion and includes, as constituent elements, lanthanum, lithium, titanium and oxygen and in which sulfur is coupled to an oxygen deficient portion and at least a surface is oxidized.

Solid electrolyte and fabrication method therefor, and all-solid-state secondary battery and fabrication method therefor

A composite solid electrolyte, which includes a solid electrolyte containing LaF, and solid electrolyte particles, which are either LiLaTiO(0&#x2264;x&#x2264;&#x2159;) or LiLaZrOconnected via the solid electrolyte.

Composite solid electrolyte and all solid battery

An electronic device includes: a substrate; a first all-solid-state secondary cell provided on the substrate, the first all-solid-state secondary cell including a first electrode layer, a solid electrolyte layer, and a second electrode layer; a first transistor including a first source drain, a second source drain electrically connected to the second electrode layer, and a first gate electrode; a first terminal electrically connected to the first electrode layer; a second terminal to control a potential of the first gate electrode; a third terminal electrically connected to the first source drain; and a sealing layer covering the first all-solid-state secondary cell and the first transistor, wherein the first terminal, the second terminal, and the third terminal are exposed on an upper surface of the sealing layer.

Electronic device, manufacturing method of the same, and network system

The lithium-ion conductor contains a crystal structure whose composition formula is represented by LiPBS(0&#x3c;x&#x2266;1). The crystal structure contains a LiStetrahedron and a BStetrahedron, a triangle window of the LiStetrahedron through which lithium ions pass becomes large caused by the BStetrahedron, and an ionic conductive path is expanded. Furthermore, lithium ions being a conductive carrier are added corresponding to B quantity x. Consequently, a lithium-ion conductor that exhibits excellent ion conductive property is realized. By using the lithium-ion conductor for a solid electrolyte, an all-solid lithium-ion secondary battery with high characteristics is realized.

Lithium-ion conductor and all-solid lithium-ion secondary battery

An uninterruptible power-supply apparatus has a storage battery including a first electrode and a second electrode, an output cable configured to output a discharge current of the storage battery to an external power line to be a backup target, and a first connection portion configured to externally take out a voltage of the first electrode.

Uninterruptible power-supply apparatus and method of using the same

A lithium ionic conductor (solid electrolyte) contains lithium (Li), phosphorus (P), boron (B) and sulfur (S) as constituent elements and has a crystal structure that boron (B) is substituted for part of phosphorus (P) in the &#x3b2; structure of LiPS.

Lithium ionic conductor and fabrication method therefor, and all-solid lithium secondary battery

An information processing system includes: a plurality of information processing devices; a plurality of power storage devices configured to supply DC power to any of the plurality of information processing devices; a plurality power source devices configured to supply DC power to the plurality of power storage devices; and an arithmetic unit configured to, in accordance with the charged state of any of the plurality of power storage devices and a task to be processed by the information processing device to which DC power is supplied from the power storage device, allocating the task to be processed by the information processing device to an information processing device to which DC power is not supplied from the power storage device.

Information processing system, uninterruptible power system, and method for controlling allocation of processing

To provide an electrolyte solution, which contains an electrolyte compound, a molecular structure of which contains a molecular chain containing a repeating unit of alkylene oxide, and contains quaternary ammonium cations at both terminals of the molecular chain.

Electrolyte solution and electric energy storing device using electrolyte solution

A multilayer interconnection structure includes a first interlayer insulation film, a second interlayer insulation film formed over the first interlayer insulation film, an interconnection trench formed in the first interlayer insulation film and having a sidewall surface and a bottom surface covered with a first barrier metal film, a via-hole formed in the second interlayer insulation film and having a sidewall surface and a bottom surface covered with a second barrier metal film, an interconnection pattern filling the interconnection trench, and a via-plug filling the via-hole, wherein the via-plug makes a contact with a surface of the interconnection pattern, the interconnection pattern has projections and depressions on the surface, the interconnection pattern containing therein oxygen atoms along a crystal grain boundary extending from the surface toward an interior of the interconnection pattern with a concentration higher than a concentration at the surface.

Semiconductor device having a multilayer interconnection structure and fabrication method thereof

A method for fabricating a semiconductor device comprises the steps of: forming interconnection groovesin an inter-layer insulation film; forming an interconnection layerof Cu as the main material in the interconnection grooves; and concurrently injecting nitrogen gas and water to the surface of the interconnection layerburied in the interconnection groove

Method for fabricating semiconductor device

An electric conductive film is formed on the insulating surface of a substrate, the substrate having a trench formed on the insulating surface, and the conductive film being filled in the trench. Chemical mechanical polishing is executed to expose the insulating surface of the substrate and leave a portion of the conductive film in the trench. The surface of the substrate having the exposed conductive film in the trench and the exposed insulating surface is exposed to first liquid. After being exposed to the first liquid, the surface of the substrate is exposed to second liquid. The first liquid is either solution which contains at least one first substance selected from a first group consisting of benzotriazole, derivative of benzotriazole and interfacial active agent, or water. The second solution is solution which contains the first substance at a density higher than a density of the first liquid.

Semiconductor device manufacture method

A method is provided for manufacturing a semiconductor device having a multilayer wiring structure in which at least one insulating film is formed with a set of conducting portions which are electrically connected to each other to have a surface area of no less than 500 &#x3bc;mand which include a wiring having a width of no more than 1.0 &#x3bc;m. The method includes a polishing step for flattening the conducting portions together with the insulating film by chemical mechanical polishing, a chemical cleaning step for cleaning the flattened surface of the insulating film with a cleaning liquid, and a rising step for removing the cleaning liquid using a rinsing liquid. The rinsing step is performed using water with a dissolved oxygen concentration decreased to no more than 6 ppm by weight as the rinsing liquid.

Growing community of inventors

Kawasaki, Japan

Tamotsu Yamamoto