Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Tamotsu Nishino

Moriyasu Miyazaki

Yukihisa Yoshida

Kenichi Miyaguchi

Masatake Hangai

Tadashi Takagi

Sangseok Lee

Morishige Hieda

Shinnosuke Soda

Yoshiyuki Suehiro

Jiwei Jiao

Naofumi Yoneda

Yoshitsugu Yamamoto

Masaomi Tsuru

Yoshihiko Konishi

Yoshio Inasawa

Shinichi Yamamoto

Michio Takikawa

Kenji Kawakami

Yukinobu Tarui

Tsutomu Endo

Yoji Isota

Izuru Naito

Tetsu Ohwada

Hiromoto Inoue

Mikio Hatamoto

Satoshi Hamano

Norihiro Yunoue

Hideki Hatakeyama

A reflector antenna device is configured to include a main reflectorthat has a rectangular aperture shape, and a primary radiatorthat radiates a beam having a rectangular shape similar to the aperture shapeof the main reflectoronto the main reflector. As the primary radiator, a multimode horn antenna, an active phased array antenna, or the like can be used. As a result, the degree of freedom of reflector shaping can be improved without causing reduction in efficiency.

Reflector antenna device

A beam forming apparatus of a satellite is configured to: define a perimeter of a coverage area, and define a coordinate grid of a polar coordinate system so as to divide the coverage area into a plurality of small areas; calculate coordinates of borders between basic cells in a Cartesian coordinate system, the basic cells being shaped into regular hexagons arranged to be in contact with one another along their sides and at their vertices or into circles circumscribing the regular hexagons; define a plurality of new cells by converting, through coordinate transformation, the coordinates of the borders between the basic cells in the Cartesian coordinate system into coordinates of borders in the polar coordinate system; and set amplitudes and phases to the plurality of antenna devices that are suitable to form a plurality of beams in respective directions of the plurality of new cells.

Satellite communication system and method for dividing the coverage area thereof

There is provided a variable device circuit according to the present invention, including: a substrate; at least one movable switch device formed on a first principal surface of the substrate; at least one fixed capacitor device formed on the first principal surface of the substrate; at least one variable capacitor device formed on the first principal surface of the substrate; at least one variable inductor device formed on the first principal surface of the substrate; and wiring lines for electrically connecting the devices to one another, the wiring lines being formed on the first principal surface of the substrate; wherein electrical connections among the devices can be selected by operation of the movable switch device, whereby achieving stable, low-loss circuit characteristics with lower manufacturing cost.

Variable device circuit and method for manufacturing the same

A switch circuit includes: a first input and output terminal; a first inductor connected with the first input and output terminal; a capacitor connected with the first inductor; a second input and output terminal connected with the capacitor; a first MEMS switch connected with one end of the capacitor; a second MEMS switch connected with the other end of the capacitor; and a second inductor connected between the first MEMS switch and the second MEMS switch, and satisfies a relationship of f=1/(2&#x3c0;&#x221a;CL)=1/(2&#x3c0;&#x221a;CL), where Lis an inductance of the first inductor, Lis an inductance of the second inductor, C is a capacitance of the capacitor, and f is a use frequency.

Switch circuit

The present invention provides a high-frequency switch including: a first switching element connected between a first input/output terminal and a second input/output terminal; a second switching element connected between the second input/output terminal and the first switching element; a high-frequency line provided between the first input/output terminal, the first switching element, and a third input/output terminal; and a third switching element connected between the third input/output terminal, the high-frequency line, and a ground. By connecting the first switching element, the second switching element, the high-frequency line, and the third switching element, because there exists no FET through which a large current flows when a state between the first input/output terminal and the third input/output terminal is set to a transmission state which requires high power handling capability, there is no need to use an FET having a large gate width, which is effective in reducing a loss of the switch.

High-frequency switch

A phase-shifting circuit includes: a first parallel circuit which is connected across input and output terminals of a high frequency signal, composed of a first inductor and a first switching element that exhibits a through state in an ON state and a capacitive property in an OFF state, and produces parallel resonance at a prescribed frequency when the first switching element is in the OFF state; a series circuit composed of a second inductor and a third inductor and connected in parallel with the first parallel circuit; a capacitor having its first terminal connected to a point of connection of the second and third inductors; and a second parallel circuit which is connected across a second terminal of the capacitor and a ground, composed of a fourth inductor and a second switching element that exhibits a through state in an ON state and a capacitive property in an OFF state, and produces parallel resonance at a prescribed frequency when the second switching element is in the OFF state. The phase-shifting circuit establishes by switching an operation mode of setting the first switching element at the ON state and the second switching element at the OFF state, or an operation mode of setting the first switching element at the OFF state and the second switching element at the ON state.

Phase-shifting circuit and multibit phase shifter

Provided is a small-size phase shift circuit having a broad band characteristic. The phase shift circuit includes: a first switching element for switching between a through path and a capacitance capacity; a second switching element for switching the capacitance capacity for the through path and the ground; and a first and a second inductor having inductance. One end of the first switching element is connected to one end of the second switching element by the first inductor while the other ends of the first and the second switching element are connected to each other by the second inductor. One end of the first switching element is connected to a high-frequency signal input terminal while the other end of the first switching element is connected to a high-frequency signal output terminal. Thus, it is possible to constitute a phase device satisfying a predetermined condition.

Phase shift circuit, high frequency switch, and phase shifter

In a signal processing apparatus for transmitting or processing a signal, a substrate has a recessed portion in a surface of the substrate, a first interconnecting conductor is on the substrate, including at least the recessed portion of the substrate, and a dielectric support film is on the substrate opposite the recessed portion of the substrate with an air space between the dielectric support film and the substrate. A second interconnecting conductor is on a part of a surface of the dielectric support film. The apparatus has a simple structure and reduced transmission loss and can be made in a simple manufacturing process.

Method of manufacturing signal processing apparatus

In a high frequency apparatus for transmitting or processing a high frequency signal, a substrate has a recessed portion in a surface of the substrate, a first interconnecting conductor is on the substrate, including at least the recessed portion of the substrate, and a dielectric support film is on the substrate opposite the recessed portion of the substrate with an air space between the dielectric support film and the substrate. A second interconnecting conductor is on a part of a surface of the dielectric support film. The high frequency apparatus has a simple structure and reduced transmission loss and can be made in a simple manufacturing process.

High frequency apparatus for transmitting or processing high frequency signal

An antenna device including matching circuits corresponding to reflection coefficients of antenna elements determined by taking into account the couplings between the antenna elements occurring when the antenna elements are excited with corresponding excitation amplitudes and excitation phases at each of operational frequencies.

Antenna device provided with matching circuits adapted for reflection coefficients

A high frequency filter includes a dielectric plate 8, an outer conductor 9 formed on the one surface of the dielectric plate 8, a plurality of strip conductors 10a-10d formed approximately in parallel on the other surface of the dielectric plate 8, a strip conductor 15 formed in a direction crossing the strip conductors 10a-10d, short-circuiting portions 11 and 16 connecting the one ends of the strip conductors 10a-10d and the strip conductor to the outer conductor 9, respectively, and further comprises a plurality of resonators 110a-110d constructed by the strip conductors 10, a plurality of capacitors (gaps) 12 coupling the resonators to each other to be connected in series, capacitors 13 connecting the strip conductors 10a, 10d to an input terminal and an outer conductor, respectively, a resonator 200 constructed by the strip conductor 15, and a plurality of capacitors (gaps) 33 connecting the strip conductors 10a, 10d to the resonator 200.

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Tokyo, Japan

Tamotsu Nishino