Tdk Corporation

Tamotsu Ishiyama

Shigeki Sato

Eiji Kato

Chikara Ishizaka

Taeko Tsubokura

Nobuhiro Jingu

Masahiro Yoshida

Masashi Miwa

Makoto Maeda

Kosuke Takano

Tomohisa Fukuoka

Masahide Ishizuya

Yuhta Matsunaga

Takashi Watanabe

Masahito Furukawa

Tsuneo Suzuki

Yasuharu Miyauchi

Shogo Murosawa

Masaru Nanao

Kyotaro Abe

Takurou Iwasa

Masahiro Karatsu

Masaaki Kanasugi

Yoshiko Gokita

An R-T-B based permanent magnet includes main phase grains composed of RTB type compound. R is a rare earth element. T is iron group element(s) essentially including Fe or Fe and Co. B is boron. An average grain size of the main phase grains is 0.8 &#x3bc;m to 2.8 &#x3bc;m. The R-T-B based permanent magnet contains at least C and Ga in addition to R, T, and B. B is contained at 0.71 mass % to 0.86 mass %. C is contained at 0.13 mass % to 0.34 mass %. Ga is contained at 0.40 mass % to 1.80 mass %. A formula (1) of 0.14&#x2264;[C]/([B]+[C])&#x2264;0.30 is satisfied, where [B] is a B content represented by atom %, and [C] is a C content represented by atom %.

R-T-B based permanent magnet

An R-T-B based permanent magnet includes main phase grains composed of RTB type compound. R is a rare earth element. T is iron group element(s) essentially including Fe or Fe and Co. B is boron. The magnet contains at least C, Ga, and M selected from Zr, Ti, and Nb in addition to R, T, and B. B is contained at 0.71 mass % to 0.88 mass %. C is contained at 0.15 mass % to 0.34 mass %. Ga is contained at 0.40 mass % to 1.40 mass %. M is contained at 0.25 mass % to 2.50 mass %. A formula (1) of 0.14&#x2264;[C]/([B]+[C])&#x2264;0.30 and a formula (2) of 5.0&#x2264;[B]+[C]&#x2212;[M]&#x2264;5.6 are satisfied, where [B], [C], and [M] are respectively a content of B, C, and M by atom %.

An R-T-B based alloy strip including columnar crystals of an RTB phase, wherein in a cross-section along the thickness direction, columnar crystals extend out in a radial fashion from the crystal nuclei, the R-T-B based alloy strip satisfying the following inequality (1), where Dand Dare, respectively, the average value for the lengths of the columnar crystals on one side and the average value for the lengths on the other side that is opposite the one side, in the direction perpendicular to the thickness direction of the cross-section.0.9/1.1&#x2266;&#x2266;1.1/0.9&#x2003;&#x2003;(1)

R-T-B based alloy strip, and R-T-B based sintered magnet and method for producing same

An R-T-B sintered magnet including a composition containing a rare earth element, a transition element and boron, containing essentially no dysprosium as a rare earth element, and having crystal grains with a composition containing a rare earth element, a transition element and boron, and grain boundary regions formed between the crystal grains, wherein the triple point regions which are grain boundary regions surrounded by 3 or more crystal grains have a composition containing a rare earth element, a transition element and boron and have a higher mass ratio of the rare earth element than the crystal grains, the average value of the area of the triple point regions in a cross-section being no greater than 2 &#x3bc;mand the standard deviation of the area distribution being no greater than 3.

R-T-B based sintered magnet and production method for same, and rotary machine

An R-T-B based alloy strip containing dendritic crystals including a RTB phase, wherein on at least one surface, the average value for the widths of the dendritic crystals is no greater than 60 &#x3bc;m, and the number of crystal nuclei in the dendritic crystals is at least 500 per 1 mm square area.

A dielectric ceramic composition includes a compound having perovskite type crystal structure shown by a general formula ABO, where A is at least one selected from Ba, Ca and Sr, and B is at least one selected from Ti and Zr, as a main component. The dielectric ceramic composition includes, as subcomponents, with respect to 100 moles of the compound, 1.0 to 2.5 moles of an oxide of RA (Dy, Gd and Tb); 0.2 to 1.0 mole of an oxide of RB (Ho and Y); 0.1 to 1.0 mole of an oxide of RC (Yb and Lu); 0.8 to 2.0 moles of Mg oxide and 1.2 to 3.0 moles of an oxide including Si in terms of RAO, RBO, RCO, Mg and Si, respectively. Also, when contents of the oxide of RA, RB and RC with respect to 100 moles of the compound are defined as '&#x3b1;', '&#x3b2;' and &#x201c;&#x3b3;&#x201d;, respectively, the &#x201c;&#x3b1;&#x201d;, &#x201c;&#x3b2;&#x201d; and &#x201c;&#x3b3;&#x201d; satisfy relations of 2.5&#x2266;(&#x3b1;/&#x3b2;)&#x2266;5.0 and 1.0&#x2266;(&#x3b2;/&#x3b3;)&#x2266;10.0. According to the present invention, a dielectric ceramic composition having good properties can be provided.

Dielectric ceramic composition and ceramic electronic component

A dielectric ceramic composition includes a compound having perovskite type crystal structure shown by a general formula ABO, where A is at least one selected from Ba, Ca and Sr, and B is at least one selected from Ti and Zr. The dielectric ceramic composition includes, as subcomponents, an oxide of RA (Dy, Gd and Tb); an oxide of RB (Ho and Y); an oxide of RC (Yb and Lu); Mg oxide and an oxide including Si in terms of RAO, RBO, RCO, Mg and Si, respectively. Also, when contents of the oxide of RA, RB and RC with respect to 100 moles of the compound are defined as '&#x3b1;', '&#x3b2;' and &#x201c;&#x3b3;&#x201d;, respectively, they satisfy relations of 1.2&#x2266;(&#x3b1;/&#x3b2;)&#x2266;5.0 and 0.5&#x2266;(&#x3b2;/&#x3b3;)&#x2266;10.0.

A printing and drying method comprising laying a support sheetelongated in the long direction so as to bridge both a printing zoneand a drying zone, in the printing zone, giving the support sheeta first tension F, in that state, printing the support sheetwith predetermined patterns, then feeding the support sheettoward the drying zone, in the drying zone, giving the support sheeton which the predetermined patterns were printed a second tension F, and in that state, drying it in a drying chamber. The first tension Fand the second tension Fare given by separate tension giving means, and the second tension Fis tension given along the support sheetin the long direction and able to prevent shrinkage of the support sheetin the long direction while passing through the drying zone

Printing and drying method, method of production of electronic device, and printing and drying system

A release layer paste used for producing a multilayer electronic device, used in combination with an electrode layer paste including terpineol, dehydroterpineol, terpineol acetate, or dehydroterpineol acetate and including a ceramic powder, organic vehicle, plasticizer, and dispersion agent, the organic vehicle containing a binder having polyvinyl acetal as its main ingredient, a ratio (P/B) of the ceramic powder and the binder and plasticizer being controlled to 1.33 to 5.56 (however, excluding 5.56).

Release layer paste and method of production of a multilayer type electronic device

A method of production of peeling layer paste used for producing a multilayer electronic device, having a step of preparing a primary slurry containing a ceramic powder having an average particle size of 0.1 pm or less, a binder, and a dispersion agent and having a nonvolatile concentration of 30 wt % or more, a step of adding to the primary slurry a binder-lacquer solution to dilute the primary slurry to prepare a secondary slurry having a nonvolatile concentration of 15 wt % or less and a content of the binder of 12 parts by weight or more with respect to 100 parts by weight of the ceramic powder, and a high pressure dispersion treatment step of running the secondary slurry through a wet jet mill to apply to the secondary slurry a shear rate of 1.5&#xd7;10to 1.3&#xd7;10(1/s).

Method of production of peeling layer paste and method of production of multilayer type electronic device

Provided is a piezoelectric ceramic with a wider operating temperature range capable of obtaining a larger amount of displacement and being easily sintered, as well as being superior in terms of ultra-low emission, environmental friendliness and ecology. A piezoelectric substratecomprises a composition including a perovskite-type oxide (NaKLiAg)(NbTa)Oand a tungsten bronze-type oxide M(NbTa)O(M is an element of Group 2 in the long form of the periodic table of the elements). The values of x, y and z are preferably within a range of 0.1&#x2266;x&#x2266;0.9, 0&#x2266;y&#x2266;0.2, and 0&#x2266;z&#x2266;0.05, respectively. The content of the tungsten bronze-type oxide is preferably 5.3 mol % or less. Thereby, a higher Curie temperature and a larger amount of displacement can be obtained, and sintering can be more easily carried out.

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Tokyo, Japan

Tamotsu Ishiyama