Fujitsu Corporation

Tii Industries, Inc.

Tamio Miyamura

Kouji Ueno

Toshitaka Fukushima

Kazumi Koyama

Yuichi Kawabata

Raymond D Jones

Shinzou Satou

Takashi Ohkawa

Kou Ebihara

Hitoshi Ohmichi

John Napiorkowski

Masamichi Kamiyama

Keisuke Ishiwata

Akiyoshi Suzuki

Kouji Miki

A Bi-CMOS circuit includes a first bipolar, a second bipolar transistor and a CMOS control unit for performing switching controls of the first and second bipolar transistors on the basis of an input signal applied to an input terminal and for controlling an output signal output via the output terminal on the basis of the input signal. A turn-OFF unit temporality couples the base of the first bipolar transistor to a low-potential side power supply line on the basis of a current flowing in said control means when the first bipolar transistor is turned OFF, so that the first bipolar transistor can be rapidly turned OFF.

Bi-CMOS circuits with enhanced power supply noise suppression and

A semiconductor memory device having a PROM with an output register has an initialize input terminal and a programmable initial data memory cell for each bit. When an initialize input signal is supplied to the initialize input terminal, the output register is cleared or present in accordance with the content of the initial data memory cell, whereby the reduction of adaptability caused by a decrease in input terminals can be prevented, a circuit arrangement can be simplified, and a high degree of integration and high-speed operation can be achieved.

Semiconductor memory device with increased adaptability

A semiconductor memory device includes control circuits which are at least a switching circuit and program circuits provided with a constant current source. The switching circuit is mainly comprised of an input side transistor and an output side transistor in the form of a thyristor, and both transistors are on only when a write operation is conducted by the program circuits and the constant current source. If no write operation is conducted, these transistors are both off.

Semiconductor memory device having switching circuit for preventing

A field programmable device comprises a plurality of word lines, a plurality of bit lines which are disposed in a manner to intersect the word lines, a plurality of cells which are respectively connected to the word lines and the bit lines, and a plurality voltage supply means, each of comprising a series connection of a resistor and a diode whose cathode is connected to each of the word lines. The voltage supply means supplies non-selected the word lines with a voltage high enough to prevent parasitic P-N-P-N elements, which are formed by the cells and the word lines, from turning on. Thus a programming current is hindered from flowing out of the cells.

Field programmable device

A semiconductor memory device which writes information by rendering particular memory cells conductive or non-conductive, wherein, when a selected memory cell is to be read out, a power supply voltage is applied to the collector of a transistor which feeds a base current to a final stage transistor of a decoder circuit which is connected to word lines, and when information is to be written in, a voltage higher than the power supply voltage is applied to the same collector.

Semiconductor memory device

A PROM device having the improved bit address decoders composed of a plurality of AND gates, each of the AND gates comprising PNP type transistors, to each base of which is applied an address signal from the bit address inverters. Each collector of these transistors is connected to ground, and each emitter is connected to the output terminal of the bit address decoder.

Programmable read-only memory device

A program circuit for permanently storing data into a programmable read only memory. A programming current (received from an external source) is connected to the selected bit line through a Darlington pair which is controlled by the bit decoding circuitry. Thus, the bit decoding circuitry is not required to pass the large programming current, and the programming current is not significantly shunted away from the selected bit line. To facilitate use of the Darlington configuration, a constant current source is provided for each bit line within a set of bit lines. The program circuit includes at least one switching means for connecting the program current to a selected bit line, a bit decoder connected to the control inputs of the switching means for selecting a bit line in response to the addressing signals input to the bit decoder and a control current supplying means for supplying a control current to the control inputs of the switching means.

Programming circuit for permanently storing data in a programmable read

A screw-in station protector assembly includes a carrier housing containing a shorting cage which is biased by a compression to urge the cage and gas tube arrester assembly outwardly. The gas tube assembly contained within the cage includes a two electrode gas tube. The gas tube is within a jacket which forms a sealed external back-up air gap protector. The screw-in-assembly is particularly adapted for retro-fitting/replacement of carbon block arresters without modification.

Growing community of inventors

Kawasaki, Japan

Tamio Miyamura