Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Ryoden Semiconductor System Engineering Corporation

Shikoku Instrumentation Co., Ltd.

Tamio Matsumura

Kazunari Nakata

Hiroshi Tanaka

Hiroshi Ohnishi

Koji Eguchi

Hiroshi Mochizuki

Toshio Komemura

Yoshiaki Terasaki

Kiyoshi Maeda

Keigo Fukunaga

Masato Toyota

Tadashi Tsujino

Masayuki Kobayashi

A laser processing apparatus includes a holder configured to hold a workpiece, a head, a first nozzle, and a driver. The head is configured to irradiate a first portion of a main surface of the workpiece with a laser beam. The first nozzle is configured to supply a first liquid to the first portion. The driver is configured to drive the holder in such a manner that the workpiece can revolve around the optical axis of the laser beam at the first portion. Accordingly, the workpiece can be processed, and debris of the workpiece can be prevented from adhering to the main surface of the workpiece.

Laser processing apparatus, laser processing method, and method for manufacturing semiconductor apparatus

A substrate suction stage including a substrate support unit having a top surface, a cavity formed therein, an ejection hole formed therein and extending from the cavity to the top surface, and a suction hole formed therein for connecting the ejection hole and the top surface, and a gas supply unit for supplying gas into the cavity, wherein the ejection hole surrounds the suction hole in plan view, and when gas is supplied into the cavity, gas in the suction hole is discharged to the outside via the ejection hole.

Substrate suction stage, substrate treatment apparatus, and substrate treatment method

As a first grinding step, a peripheral portion of a back surface of a wafer () is ground with a first grindstone () to form a fractured layer () in the peripheral portion. Subsequently, as a second grinding step, a central portion of the back surface of the wafer () is ground with the first grindstone () to form a recess () while the peripheral portion in which the fractured layer () is formed is left as a rib (). Subsequently, as a third grinding step, a bottom surface of the recess () is ground with a second grindstone () of an abrasive grain size smaller than that of the first grindstone () to reduce a thickness of the wafer ().

Method for manufacturing semiconductor device

According to the present invention, a semiconductor-element manufacturing method including the steps of cutting out a ring portion of a wafer with laser light to form a flat wafer, the ring portion being formed on a periphery of the wafer and thicker than a central portion of the wafer, the wafer having a first surface and a second surface opposite to the first surface, with the first surface of the wafer being held on a vacuum stage by suction, attaching the first surface to dicing tape after detaching the flat wafer from the vacuum stage with the second surface of the flat wafer being held by a vacuum end-effector by suction, and dicing the flat wafer attached to the dicing tape.

Semiconductor-element manufacturing method and wafer mounting device using a vacuum end-effector

A method of manufacturing a semiconductor device, includes a wafer grinding step of, by means of a revolving grinding stone, forming a thinned portion in a wafer while at the same time forming a slope surrounding said thinned portion, wherein during said formation of said slope, said grinding stone is positioned so that there is always a space between said slope and the facing side of said grinding stone, wherein said thinned portion is thinner than a peripheral portion of said wafer, and wherein said slope extends along and defines an inner circumferential side of said peripheral portion and forms an angle of 75&#xb0; or more but less than 90&#xb0; with respect to a main surface of said wafer. The method of manufacturing a semiconductor device further includes a step of forming a semiconductor device in said thinned portion.

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device having a back surface electrode, including: a step of preparing a semiconductor wafer having a front surface and a back surface; a thermal processing step of forming a first metal layer on the back surface of the semiconductor wafer and executing thermal processing, thereby creating an ohmic contact between the semiconductor wafer and the first metal layer; and a step of forming a second metal layer of Ni on the back surface of the semiconductor substrate after the thermal processing step.

A process control method allowing an operator to readily confirm an order of operation processes includes steps of: reading magnetic data of a control card when the control card is inserted; transmitting completion data based on a lot number identified from read magnetic data to a host computer; receiving update data by the host computer; writing next process data in the received data as a visually recognizable image on the control card; and writing the next process data as a visually recognizable image based on process data identified by the read magnetic data when a predetermined time period passes without receiving update data.

Process control device and process control method using a medium with rewritable marking technique

Components such as an earth plate, a gas introduction ring, and the like placed in a reaction chamber in a plasma apparatus are made of aluminum containing magnesium in a concentration of 2.2 to 2.8% by weight and are not coated with alumite. In addition, a heater incorporated in a section of the reaction chamber heats the section during a plasma cleaning process. Further, an electrical discharge chamber is also incorporated in the plasma apparatus for providing a plasma to the reaction chamber for efficient plasma cleaning of the apparatus.

Growing community of inventors

Tokyo, Japan

Tamio Matsumura