Asml Holding N.v.

Asml Netherlands B.v.

Asml Holding N.v. & Asml Netherlands B.v.

Tamer Mohamed Tawfik Ahmed Mohamed Elazhary

Justin Lloyd Kreuzer

Krishanu Shome

Mohamed Swillam

Yuxiang Lin

Stephen Roux

Sebastianus Adrianus Goorden

Simon Reinald Huisman

Arie Jeffrey Den Boef

Franciscus Godefridus Casper Bijnen

Yevgeniy Konstantinovich Shmarev

Igor Matheus Petronella Aarts

Christopher John Mason

Johannes Antonius Gerardus Akkermans

Joshua Adams

Kirill Urievich Sobolev

Irit Tzemah

Vu Quang Tran

A sensor apparatus includes an illumination system, a detector system, and a processor. The illumination system is configured to transmit an illumination beam along an illumination path and includes an adjustable optic. The adjustable optic is configured to transmit the illumination beam toward a diffraction target on a substrate that is disposed adjacent to the illumination system. The transmitting generates a fringe pattern on the diffraction target. A signal beam includes diffraction order subbeams that are diffracted by the diffraction target. The detector system is configured to collect the signal beam. The processor is configured to measure a characteristic of the diffraction target based on the signal beam. The adjustable optic is configured to adjust an angle of incidence of the illumination beam on the diffraction target to adjust a periodicity of the fringe pattern to match a periodicity of the diffraction target.

On chip wafer alignment sensor

A compact sensor apparatus having an illumination beam, a beam shaping system, a polarization modulation system, a beam projection system, and a signal detection system. The beam shaping system is configured to shape an illumination beam generated from the illumination system and generate a flat top beam spot of the illumination beam over a wavelength range from 400 nm to 2000 nm. The polarization modulation system is configured to provide tenability of linear polarization state of the illumination beam. The beam projection system is configured to project the flat top beam spot toward a target, such as an alignment mark on a substrate. The signal detection system is configured to collect a signal beam comprising diffraction order sub-beams generated from the target, and measure a characteristic (e.g., overlay) of the target based on the signal beam.

Optical designs of miniaturized overlay measurement system

A sensor apparatus includes a sensor chip, an illumination system, a first optical system, a second optical system, and a detector system. The illumination system is coupled to the sensor chip and transmits an illumination beam along an illumination path. The first optical system is coupled to the sensor chip and includes a first integrated optic to configure and transmit the illumination beam toward a diffraction target on a substrate, disposed adjacent to the sensor chip, and generate a signal beam including diffraction order sub-beams generated from the diffraction target. The second optical system is coupled to the sensor chip and includes a second integrated optic to collect and transmit the signal beam from a first side to a second side of the sensor chip. The detector system is configured to measure a characteristic of the diffraction target based on the signal beam transmitted by the second optical system.

On chip sensor for wafer overlay measurement

A system () includes an illumination system (), a lens element (), and a detector (). The illumination system generates a beam of radiation () having a first spatial intensity distribution () at a pupil plane () and a second spatial intensity distribution () at a plane of a target (). The first spatial intensity distribution comprises an annular intensity profile () or an intensity profile corresponding to three or more beams. The lens element focuses the beam onto the target. The second spatial intensity distribution is a conjugate of the first intensity distribution and has an intensity profile corresponding to a central beam () and one or more side lobes () that are substantially isolated from the central beam. The central beam has a beam diameter of approximately 20 microns or less at the target. The detector receives radiation scattered by the target and generates a measurement signal based on the received radiation.

Lithographic apparatus, metrology system, and illumination systems with structured illumination

An apparatus and system for determining alignment of a substrate in which a periodic alignment mark is illuminated with spatially coherent radiation which is then provided to a compact integrated optical device to create self images of the alignment mark which may be manipulated (e.g., mirrored, polarized) and combined to obtain information on the position of the mark and distortions within the mark. Also disclosed is a system for determining alignment of a substrate in which a periodic alignment mark is illuminated with spatially coherent radiation which is then provided to an optical fiber arrangement to obtain information such as the position of the mark and distortions within the mark.

Compact alignment sensor arrangements

Apparatus for, and method of, measuring a parameter of an alignment mark on a substrate in which an optical system is arranged to receive at least one diffraction order from the alignment mark and the diffraction order is modulated at a pupil or a wafer conjugate plane of the optical system, a solid state optical device is arranged to receive the modulated diffraction order, and a spectrometer is arranged to receive the modulated diffraction order from the solid state optical device and to determine an intensity of one or more spectral components in the modulated diffraction order.

Sensor apparatus and method for lithographic measurements

Disclosed is a metrology sensor apparatus comprising: an illumination system operable to illuminate a metrology mark in on a substrate with illumination radiation; an optical collection system configured to collect scattered radiation, following scattering of the illumination radiation by the metrology mark; and a wavelength dependent spatial filter for spatially filtering the scattered radiation, the wavelength dependent spatial filter having a spatial profile dependent on the wavelength of the scattered radiation. The wavelength dependent spatial filter may comprise a dichroic filter operable to substantially transmit scattered radiation within a first wavelength range and substantially block scattered radiation within a second wavelength range and at least one second filter operable to substantially block scattered radiation at least within the first wavelength range and the second wavelength range.

Metrology sensor, lithographic apparatus and method for manufacturing devices

An alignment sensor apparatus includes an illumination system, a first optical system, a second optical system, a detector system, and a processor. The illumination system is configured to transmit an illumination beam along an illumination path. The first optical system is configured to transmit the illumination beam toward a diffraction target on a substrate. The second optical system includes a first polarizing optic configured to separate and transmit an irradiance distribution. The detector system is configured to measure a center of gravity of the diffraction target based on the irradiance distribution outputted from a first polarization branch and a second polarization branch. The processor is configured to measure a shift in the center of gravity of the diffraction target caused by an asymmetry variation in the diffraction target and determine a sensor response function of the alignment sensor apparatus based on the center of gravity shift.

Growing community of inventors

New Canaan, CT, United States of America

Tamer Mohamed Tawfik Ahmed Mohamed Elazhary