Tokyo Electron Limited

Tamaki Yuasa

Toshihisa Nozawa

Jun Yamashita

Shinya Nishimoto

Cai Zhong Tian

Junichi Kitagawa

Kiyotaka Ishibashi

Tetsuya Nishizuka

Nobuhiko Yamamoto

Singo Furui

A processing apparatus for performing a specified process on a target object at a predetermined process pressure, the apparatus having an evacuable processing chamber having a gas exhaust port formed in a bottom portion thereof, a mounting table provided within the processing chamber for holding the target object, a pressure control valve connected to the gas exhaust port, the pressure control valve including a slide-type valve body for changing an area of an opening region of a valve port, and a gas exhaust system connected to the pressure control valve. The pressure control valve is arranged such that a center axis of the mounting table lies within an opening region of the pressure control valve formed over a practical use region of a valve opening degree of the pressure control valve.

Processing device

A structure of an improved processing vessel for a processing apparatus, which processes a target object using a processing gas, is disclosed. The target object, such as a semiconductor wafer, is heated within a metal cylindrical shaped processing vessel. The processing vessel includes a plurality of block bodies mutually connected by being stacked in the vertical direction. Heat insulating vacuum layers are arranged between the adjacent block bodies. Thus, heat transfer between block bodies is suppressed, so that temperature of each block body can be separately controlled, thereby improving energy efficiency.

Processing apparatus

In a plasma processing apparatus that processes a wafer in a process vessel by plasma generated by the supply of a microwave, a transmissive window has, in a center area of its lower surface, a hanging portion made of the same material as a material of the transmissive window. Between an outer peripheral surface of the hanging portion and a sidewall inner surface continuing from a support part, a gap is formed, the gap having a gap length of 0.5 to 10 mm, more preferably 0.5 to 5 mm. The generation of a strong electric field and plasma at a contact point is inhibited and an amount of sputtered particles, radicals, or the like reaching the wafer is also reduced.

Plasma processing apparatus and plasma processing method

In a processing apparatus for performing a specified process on a target object at a predetermined process pressure, the apparatus includes an evacuable processing chamber having a gas exhaust port formed in a bottom portion thereof; a mounting table provided within the processing chamber for holding the target object; a pressure control valve connected to the gas exhaust port, the pressure control valve including a slide-type valve body for changing an area of an opening region of a valve port; and a gas exhaust system connected to the pressure control valve. The pressure control valve is eccentrically arranged such that a center axis of the mounting table lies within an opening region of the pressure control valve formed over a practical use region of a valve opening degree of the pressure control valve.

When plasma processing is finished, a gate valveis closed and cleaning gas is ejected from holesof a shower plate, and at the same time, a microwave is generated from a microwave generator. Further, at this time, the inside of a process chamberis exhausted through a second exhaust port. Since the exhaust is conducted through a second exhaust portpositioned lower than a wafer stagein a lowered state when the inside of the process chamberis cleaned, it is possible to more effectively remove gas and reaction products deposited especially in a lower portion of the process chamber

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Amagasaki, Japan

Tamaki Yuasa