Canon Kabushiki Kaisha

Tamaki Kobayashi

Keisuke Yamamoto

Satoshi Mogi

Tohru Den

Norio Kaneko

Takuto Moriguchi

Toru Den

Tomoyuki Oike

Toshihiko Takeda

Shin Kitamura

Ryoko Ueyama

Masaaki Shibata

Tatsuya Saito

Nobuhiro Yasui

Masato Ofuji

Takahiro Sato

Junya Tanaka

Kenichi Iwata

Yoichi Ando

Masami Tsukamoto

Akira Shimazu

Yusuke Miyamoto

Yohei Ishida

Noritake Suzuki

Yuu Nishimura

Hideshi Kawasaki

Koki Nukanobu

Tomoaki Ichimura

Akira Hayama

Tsuyoshi Takegami

Eiji Takeuchi

Yoshito Sasaki

Yoshinori Shibutani

Jun Akimitsu

Masao Ina

Kyota Nozu

Hisashi Sakata

Taiji Tomita

Youichi Ando

A manufacturing method of a radiation imaging apparatus in which a sensor substrate and a scintillator are bonded by a bonding member, is provided. The method includes: forming, on a support substrate, a functional layer including a moisture preventing layer configured to suppress permeation of water; forming the scintillator on the support substrate with the functional layer arranged thereon; and separating, from the support substrate, at least a part of the scintillator together with the functional layer.

Manufacturing method of radiation imaging apparatus

A scintillator panel is provided. The scintillator panel comprises: a support; a scintillator configured to generate light in accordance with incident radiation; a light reflecting layer arranged between the support and the scintillator and configured to reflect the light; a semi-transmissive layer arranged between the light reflecting layer and the scintillator and configured to reflect part of the light and transmit other part of the light; and an optical adjustment layer arranged between the light reflecting layer and the semi-transmissive layer and configured to make an optical distance between the light reflecting layer and the semi-transmissive layer become a length with which the light resonates.

Scintillator panel and radiation imaging apparatus

A method of manufacturing a scintillator, includes growing a scintillator layer constituted by a plurality of column crystals on a base, forming a first protection film so as to cover the scintillator layer, planarizing the first protection film, the planarizing including a polishing process of polishing the first protection film, and forming a second protection film configured to cover the first protection film that has undergone the planarizing. The scintillator layers grown on the base include an abnormally grown portion. In the polishing process, a front end of the abnormally grown portion is polished as well as a surface of the first protection film so as to form a continuation surface by the surface of the first protection film and a surface of the abnormally grown portion.

Scintillator, method of manufacturing the same, radiation imaging apparatus, and radiation imaging system

Provided is a scintillator plate including a crystalline body formed of a compound having a crystal structure of a CsCuIcrystal and a substrate, in which an orientation of the crystalline body is an a-axis group orientation with respect to a direction perpendicular to the substrate.

Scintillator plate and radiation detector

Improvement in luminescence intensity is demanded from a scintillator material. The present invention provides a new scintillator material by adding a specific element selected from thallium and indium to a material having a basic composition represented by an alkali element:copper:a halogen element=3:2:5.

Scintillator material and radiation detector using same

A radiation detector including a scintillator structure comprising a first plane and a second plane which are not positioned on the same plane, the scintillator structure having an optical waveguiding property in a direction between the first plane and the second plane; and a two-dimensional light receiving element formed of multiple pixels which are disposed parallel to either one of the first plane and the second plane. The radiation detector includes at least one smoothness-deteriorate region which is positioned in one of the first plane and the second plane of the scintillator structure and has an area of 1/6 or more of a light receiving area of each of the multiple pixels. The region is repaired by an optically transparent material so as to be smoothed.

Radiation detector

A method for producing an electron-emitting device includes forming a first conductive film on a side surface of an insulation layer including the side surface and a top surface connected to the side surface; forming a second conductive film from the top surface to the side surface and on the first conductive film; and etching the second electrically conductive film.

Method for producing electron-emitting device and method for producing image display apparatus including the same

By applying a drive voltage Vf [V] between first and second conductive films, when electrons are emitted by the first conductive film, an equipotential line of 0.5 Vf [V] is inclined toward the first conductive film, rather than toward the second conductive film, in the vicinity of the electron emitting portion of the first conductive film, in a cross section extending across the electron emitting portion and the portion of the second conductive film located nearest the electron emitting portion. The present invention improves electron emission efficiency.

Electron-emitting device, electron-emitting apparatus, electron source, image display device and information display/reproduction apparatus

An electron-emitting device manufacturing method includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film in a film thickness direction. At the first step, the conductive film is formed so that film density of the conductive film on the side surface of the insulating layer becomes the same as or higher than film density of the conductive film on the upper portion of the insulating film.

Method of manufacturing electron-emitting device and method of manufacturing image display apparatus

An electron-emitting device has an insulating layer having a side surface, a recess portion formed on the side surface of the insulating layer, a gate electrode which is arranged above the recess portion, and a wedge-shaped emitter which is arranged on an edge of a lower side of the recess portion and has a first slope on a side of the recess portion and a second slope on a side opposite to the recess portion. A lower end of the first slope of the emitter enters the recess portion, and both the first slope and the second slope of the emitter tilt to an outside of the recess portion.

Electron-emitting device and image display apparatus using the same

In an electron-emitting device having a pair of electroconductors arranged on a substrate at an interval, a top of one electroconductor is higher than that of the other electroconductor and a groove extending from the interval region toward a position under a region where the one electroconductor is come into contact with the substrate is formed on the substrate. Deterioration of the electron-emitting device due to collision of charged particles is suppressed by the asymmetrical electron-emitting region, electron-emitting efficiency is improved, and a long life is realized.

Manufacturing method of electron emitting device, electron source and image display apparatus

An effective voltage V' effectively applied to a gapduring an 'activation step' is controlled to a desired value. In the 'activation step', a voltage is repeatedly applied between a first electroconductive filmand a second electroconductive filmwhile controlling voltages outputted from a voltage sourceso that a value &#x3b2;becomes a desired value.

Method of manufacturing electron-emitting device, electron source using electron-emitting device, method of manufacturing image display apparatus, and information display reproduction apparatus using image display apparatus manufactured by the method

An electron-emitting device is equipped with a pair of first electroconductive members arranged on a substrate with an interval between them, wherein the interval becomes narrower at an upper position distant from a surface of the substrate than at a position on the surface, and a peak of one of the pair of the first electroconductive members is higher than a peak of the other of the pair of the first electroconductive members, and further an electron scattering surface forming film including an element having an atomic number larger than those of elements constituting the first electroconductive members as a principal component is provided on a surface of the one of the first electroconductive members.

Electron-emitting device, electron source, and method for manufacturing image displaying apparatus

An image display apparatus including a rear plate and a face plate disposed opposite to each other, the rear plate being equipped with a plurality of electron-emitting devices, each provided with a pair of electrodes and an electroconductive film including an electron-emitting region disposed between the electrodes, the face plate being equipped with a phosphor for displaying an image and a film exposed on a surface of the phosphor, the film comprising a metal or a metal compound material. A film comprising the same metal or the same metal compound material as the metal or the metal compound material constituting the film exposed on the surface of the phosphor is formed on each of the electroconductive films of the plurality of electron-emitting devices to have a thickness in a range from 0.2 nm to 4.5 nm.

Electron emitting devices having metal-based film formed over an electro-conductive film element

Provided is a manufacturing method capable of manufacturing an electron-emitting device in which a variation in device current at the time of manufacturing is suppressed and thus uniformity thereof is high. The electron-emitting device includes a substrate, a first conductor, and a second conductor. The substrate is composed of: a member which contains silicon oxide as a main ingredient, NaO, and KO and in which a molar ratio of KO to NaO is 0.5 to 2.0; and a film which contains silicon oxide as a main component and is stacked on the member. The first conductor and the second conductor are located on the substrate. In a forming step and/or an activation step, a quiescent period (interval) of a pulse voltage applying repeatedly applied between the first conductor and the second conductor is set equal to or longer than 10 msec.

Growing community of inventors

Isehara, Japan

Tamaki Kobayashi