Semiconductor Energy Laboratory Co., Ltd.

Tamae Takano

Shunpei Yamazaki

Hisashi Ohtani

Yoshinobu Asami

Toru Mitsuki

Hideto Ohnuma

Chiho Kokubo

Atsuo Isobe

Ryoji Nomura

Kenji Kasahara

Taketomi Asami

Masayuki Sakakura

Takeshi Shichi

Kiyoshi Kato

Hidekazu Miyairi

Makoto Furuno

Akihisa Shimomura

Nobuharu Ohsawa

Koji Dairiki

Mikio Yukawa

Yasuyuki Arai

Mitsuaki Osame

Aya Anzai

Yu Yamazaki

Takashi Hamada

Tetsuya Kakehata

Masaki Koyama

Mitsuhiro Ichijo

Satoshi Toriumi

Takashi Ohtsuki

Takehisa Sato

Koichiro Tanaka

Hideaki Kuwabara

Tsunenori Suzuki

Satoshi Murakami

Osamu Nakamura

Tatsuya Arao

Setsuo Nakajima

Hiroko Abe

Yoshitaka Moriya

Etsuko Fujimoto

Kouki Inoue

Fumiko Terasawa

Ryota Tajima

Toshihiko Saito

Atsushi Tokuda

Takehisa Hatano

Hiroaki Irie

Kazutaka Kuwashima

Tsuenori Suzuki

Nobuhara Ohsawa

A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.

Memory device and manufacturing method the same

When a conductive layer occupying a large area is provided in a coiled antenna portion, it has been difficult to supply power stably. A memory circuit portion and a coiled antenna portion are disposed by being stacked together; therefore, it is possible to prevent a current from flowing through a conductive layer occupying a large area included in the memory circuit portion, and thus, power saving can be achieved. In addition, the memory circuit portion and the coiled antenna portion are disposed by being stacked together, and thus, it is possible to use a space efficiently. Therefore, downsizing can be realized.

Semiconductor device having antenna and sensor elements

Semiconductor device with antenna and light-emitting element

The present invention provides a semiconductor device which suppresses a short circuit and a leakage current between a semiconductor film and a gate electrode generated by a break or thin thickness of a gate insulating film in an end portion of a channel region of the semiconductor film, and the manufacturing method of the semiconductor device. Plural thin film transistors which each have semiconductor film provided over a substrate continuously, conductive films provided over the semiconductor film through a gate insulating film, source and drain regions provided in the semiconductor film which are not overlapped with the conductive films, and channel regions provided in the semiconductor film existing under the conductive films and between the source and drain regions. And impurity regions provided in the semiconductor film which is not overlapped with the conductive film and provided adjacent to the source and drain regions. Further, the conductive films are provided over the channel regions and regions of the semiconductor film which are provided adjacent to the channel regions.

Semiconductor device and manufacturing method of the same

The invention provides a semiconductor device and its manufacturing method in which a memory transistor and a plurality of thin film transistors that have gate insulating films with different thicknesses are fabricated over a substrate. The invention is characterized by the structural difference between the memory transistor and the plurality of thin film transistors. Specifically, the memory transistor and some of the plurality of thin film transistors are provided to have a bottom gate structure while the other thin film transistors are provided to have a top gate structure, which enables the reduction of characteristic defects of the transistor and simplification of its manufacturing process.

Semiconductor device and manufacturing method thereof

A manufacturing method of a semiconductor device of the present invention includes the steps of forming a stacked body in which a semiconductor film, a gate insulating film, and a first conductive film are sequentially stacked over a substrate; selectively removing the stacked body to form a plurality of island-shaped stacked bodies; forming an insulating film to cover the plurality of island-shaped stacked bodies; removing a part of the insulating film to expose a surface of the first conductive film, such that a surface of the first conductive film almost coextensive with a height of the insulating film; forming a second conductive film over the first conductive film and a left part of the insulating film; forming a resist over the second conductive film; selectively removing the first conductive film and the second conductive film using the resist as a mask.

Semiconductor device and method for manufacturing the same

There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element for facilitating crystallization of an amorphous semiconductor thin film is added to the amorphous semiconductor thin film, and a heat treatment is carried out to obtain a crystalline semiconductor thin film. After the crystalline semiconductor thin film is irradiated with ultraviolet light or infrared light, a heat treatment at a temperature of 900 to 1200&#xb0; C. is carried out in a reducing atmosphere. The surface of the crystalline semiconductor thin film is extremely flattened through this step, defects in crystal grains and crystal grain boundaries disappear, and the single crystal semiconductor thin film or substantially single crystal semiconductor thin film is obtained.

Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same

Semiconductor device having an antenna

It is an object to provide a nonvolatile semiconductor memory device having excellent writing property and charge-retention property. A semiconductor layer including a channel forming region between a pair of impurity regions which are formed to be apart from each other is provided. In an upper layer portion thereof, a first insulating layer, a floating gate, a second insulating layer, and a control gate are provided. The floating gate has at least a two-layer structure, and a first layer in contact with the first insulating layer preferably has a band gap smaller than that of the semiconductor layer. Furthermore, by setting an energy level at the bottom of the conduction band of the floating gate lower than that of the channel forming region of the semiconductor layer, injectability of carriers and a charge-retention property can be improved.

Nonvolatile semiconductor memory device

The invention provides a novel memory for which process technology is relatively simple and which can store multivalued information by a small number of elements. A part of a shape of the first electrode in the first storage element is made different from a shape of the first electrode in the second storage element, and thereby voltage values which change electric resistance between the first electrode and the second electrode are varied, so that one memory cell stores multivalued information over one bit. By partially processing the first electrode, storage capacity per unit area can be increased.

It is an object of the present invention to provide a nonvolatile memory device, in which additional writing is possible other than in manufacturing and forgery and the like due to rewriting can be prevented, and a semiconductor device having the memory device. It is another object of the present invention to provide an inexpensive and nonvolatile memory device with high reliability and a semiconductor device. According to one feature of the present invention, a memory device includes a first conductive layer formed over an insulating surface, a second conductive layer, a first insulating layer interposed between the first conductive layer and the second conductive layer, and a second insulating layer which covers a part of the first conductive layer, wherein the first insulating layer covers an edge portion of the first conductive layer, the insulating surface, and the second insulating layer.

Memory element and semiconductor device

Growing community of inventors

Atsugi, Japan

Tamae Takano