Aplus Flash Technology, Inc.

Silicon Storage Technology, Inc.

Tam Huu Tran

Peter Wung Lee

Hieu Van Tran

Vishal Sarin

Fu-Chang Hsu

Anh Ly

Hsing-Ya Tsao

Sang Thanh Nguyen

Niang Hangzo

A bandgap reference generator comprises a PMOS transistor and NMOS transistor in a pnp bipolar junction transistor connected in series in a first leg. The bandgap reference generator includes a second leg that includes a PMOS transistor, an NMOS transistor, a resistor and a pnp bipolar junction transistor. A bias circuit provides a bias to a mirror formed by the gates of the PMOS transistors to lower the operating voltage of the bandgap reference generator. A second biasing circuit may provide bias to the mirror formed of the NMOS transistors. A time-based and a DC bias-based start up circuitry and method is provided.

Low voltage CMOS bandgap reference

A multiple time programmable (MTP) memory device is achieved. The device comprises, first, a memory cell array including a means of electrical erasability and electrical programmability. The memory cell array comprises, preferably, a Flash memory cell array. A package has an external pin configuration that conforms to the JEDEC standard for an EPROM device wherein an external, positive programming voltage (VPP) pin is provided. Finally, an external, negative erasing voltage (VNN) pin is provided. The VNN pin is, preferably, multiplexed with the chip enable bar (CEB) pin.

Method to turn a flash memory into a versatile, low-cost multiple time programmable EPROM

A method to test the erase condition of memory cells in a memory array device is achieved. The method is further extended to methods to detect and correct under erase and over erase conditions. The erase condition of a section of the memory array device is altered to form an erased section and non-erased sections. The control gates of the memory cells in the non-erased sections are forced to a normal off-state voltage sufficient to turn off erased cells. The control gates of the memory cells in non-selected subsections of the erased section are forced to a guaranteed off-state voltage that will turn off erased cells including those that are over erased. The control gates of the memory cells in a selected subsection of the erased section are forced to a check voltage. Thereafter, the bitline current of the selected subsection of the erased section is measured to determine erase condition of the selected subsection of the erase section.

Bit-by-bit Vt-correction operation for nonvolatile semiconductor one-transistor cell, nor-type flash EEPROM

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San Jose, CA, United States of America

Tam Huu Tran