Mellanox Technologies, Ltd.

Tali Septon

Elad Mentovich

Moshe Oron

Itshak Kalifa

Yaakov Gridish

Juan Jose Vegas Olmos

Matan Galanty

Yonatan Piasetzky

Hanan Shumacher

Vadim Balakhovski

Paraskevas Bakopoulos

Dimitrios Kalavrouziotis

Ioannis (Giannis) Patronas

Dimitrios Syrivelis

Isabelle Cestier

Yuval Idan

Eliahu Cohen

Avshalom C Elitzur

Taylor Lee Patti

Bi-directional quantum interconnects are provided that include a first communication module and a second communication module. The first communication module includes a first quantum transmitter and a first quantum receiver, and the second communication module includes a second quantum transmitter and a second quantum receiver. The example interconnect further includes a first communication medium communicably coupling the first communication module and the second communication module such that communication is provided between the first quantum transmitter and the second quantum receiver and between the second quantum transmitter and the first quantum receiver via the first communication medium. The first quantum transmitter and the second quantum transmitter generate qubits having first and second quantum characteristics, respectively, to allow for bi-directional quantum communication over a common channel.

Bi-directional quantum interconnects

A method and system for analyzing Vertical-Cavity Surface-Emitting Lasers (VCSELs) on a wafer are provided. An illustrative method of is provided that includes: applying a stimulus to each of the plurality of VCSELs on the wafer; measuring, for each of the plurality of VCSELs, two or more VCSEL parameters responsive to the stimulus; correlating the measured two or more VCSEL parameters to define a value of a common performance characteristic; and identifying clusters of VCSELs having similar values of the common performance characteristic. The clusters of VCSELs may be determined to collectively meet or not meet an optical performance requirement defined for the VCSELs on the wafer.

Wafer level analysis for VCSEL screening

An apparatus comprises a support structure and one or more first optical components on the support structure that communicatively couple with a first endpoint. The one or more first optical components are configured to output and receive optical signals that travel over a free space medium to establish a secure link between the first endpoint and a second endpoint.

Devices, systems, and methods for free space key exchange

A method and system for large scale Vertical-Cavity Surface-Emitting Laser (VCSEL) binning from wafers to be compatible with a Clock-Data Recovery Unit (CDRU) and/or a VCSEL driver are provided. An illustrative method of binning is provided that includes: for at least a portion of VCSELs on a wafer, measuring a set of representative parameters of the VCSELs, of predetermined DC or small-signal values, and sorting the measured VCSELs into clusters according to the measured set of representative parameters of the VCSELs; further sorting the clusters into sub-groups that comply with specifications of the VCSEL driver; and providing a feedback signal to the CDRU for equalizing control signals provided to the VCSEL driver.

VCSEL binning for optical interconnects

Various embodiments of the present disclosure are directed to accessing a quantum communication channel undetected and/or characterizing this communication channel based upon attempted access. An example method includes accessing a quantum communication channel transmitting one or more qubits. The method includes the introduction of a noise signal to the quantum communication channel and then applying in its absence one or more weak or variable-strength measurements to the quantum communication channel. A strength of at least one measurement of the one or more measurements is based at least in part upon the current noise signal. The method further includes obtaining information associated with the one or more qubits based on the one or more measurements.

Measurement based methods for accessing and characterizing quantum communication channels

High bandwidth (e.g., >100 GHz) modulators and methods of fabricating such are provided. An optical modulator comprises transmission lines configured to provide a respective radio frequency signal to a respective plurality of segmented capacitive loading electrodes; pluralities of segmented capacitive loading electrodes in electrical communication with a respective one of the transmission lines and in electrical communication with an interface layer of a semiconductor waveguide structure; and the semiconductor waveguide structure. The semiconductor waveguide structure is configured to modulate an optical signal propagating therethrough based at least in part on the respective radio frequency signal. The semiconductor waveguide structure comprises the interface layer, which (a) comprises a semiconductor material and (b) is configured such that an interface resistance of the modulator is ≤4 Ohms. The interface resistance is a serial resistance between the interface layer and respective electrodes of the pluralities of segmented capacitive loading electrodes.

High bandwidth optical modulator

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Haifa, Israel

Tali Septon