Applied Materials, Inc.

Talex Sajoto

Jun Zhao

Charles N Dornfest

Leonid Selyutin

Lee Luo

Stefan A Wolff

Mei Yin Chang

Ashok K Sinha

Vincent W Ku

Michal Danek

Avi Tepman

Alex Schreiber

Xiao Liang Jin

Jia-Xiang Wang

Sasson Roger Somekh

Eller Y Juco

Frank P Chang

Richard Palicka

Harold H Mortensen

Po Tang

Joseph Yudovsky

Visweswaren Sivaramakrishnan

Arnold Kholodenko

Maitreyee Mahajani

Steve G Ghanayem

Semyon Sherstinsky

Paul F Smith

Mario David Silvetti

Tai T Ngo

Calvin R Augason

Leonel Arturo Zuniga

Bum Jin Park

Seong Ju Kim

Hee Sang Chae

Seok Yul Jun

Chris Wang

Sun Il Kim

Hyong Seok Oh

Sung Chul Cho

Young Sam Na

Yeon Sang Cho

Ha Sung Song

Electrostatic chucks and methods of manufacturing the same are provided herein. In some embodiments, an electrostatic chuck comprises an electrically conductive body having one or more channels formed in an upper surface thereof; a plate positioned within the one or more channels to define one or more plenums between the body and the plate, wherein the surfaces of the plenum are anodized; one or more fluid passages disposed in the plate and fluidly coupling the one or more plenums to the upper surface of the body, wherein the surfaces of the fluid passages are electrically insulated; and a dielectric layer disposed over the upper surface of the body and the plate, wherein the dielectric layer forms a support surface for a substrate to be disposed thereon.

Electrostatic chuck having reduced arcing

A substrate processing system is provided with a processing chamber, an alternating voltage supply, and an impedance matching network. The processing chamber holds a substrate during processing and the alternating voltage supply is connected with the processing chamber to capacitively couple energy to a plasma formed within the processing chamber. The impedance matching network is coupled with the alternating voltage supply and has a variable resistive element and a variable reactive element, whose states respectively define distinct real and imaginary parts of an impedance.

Universal mid-frequency matching network

The present invention provides techniques for coupling radio-frequency (RF) power to a metal plate in a ceramic pedestal. Perforations in the metal plate allow ceramic-to-ceramic bonding through the metal plate. The power from an RF power feed is distributed to the perforated metal plate via several electrodes that are spaced away from the centerline of the RF power feed, thus splitting power distribution. A ceramic bonding disk between the metal plate and the RF power feed provides mechanical support for the metal plate and a ceramic body to bond to through the perforations, thus reducing cracking of the metal plate and the surrounding ceramic material.

High temperature ceramic heater assembly with RF capability

The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. In one aspect, an apparatus and process for the control of a gas flowed through a gas feedthrough in a substrate processing chamber and system is provided. In another aspect, a deposition chamber is provided for depositing BST and other materials which require vaporization, especially low volatility precursors which are transported as a liquid to a vaporizer to be converted to vapor phase and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. The chamber comprises a series of heated temperature controlled internal liners, such as a heated gas feedthrough.

Temperature controlled gas feedthrough

A support member for supporting a substrate in a process chamber, the support member having a substrate support surface with one or more isolated recessed areas. A vacuum channel and a gas channel are formed in the support member along a common plane and are coupled to a vacuum source and gas source respectively. The gas channel comprises two or more concentrically disposed annular gas channels encompassing the vacuum channel. The vacuum channel is coupled to the support surface, and in particular to the one or more recessed areas, by a plurality of conduits. A portion of the conduits is disposed diametrically exterior to at least one of the annular gas channels and communicates with the vacuum channel via bypass channels.

Substrate support member for a processing chamber

A method of depositing titanium nitride by chemical vapor deposition in a chamber having several design features directed to the conductive nature of titanium nitride, particularly when a plasma treatment step is performed after the thermal deposition of the film. Preferably, during the post-deposition plasma treatment, RF power is applied only to the showerhead counter-electrode and none to the pedestal supporting the wafer, thereby preventing charging of the wafer.

Plasma treatment of titanium nitride formed by chemical vapor deposition

The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.

Vaporization and deposition apparatus

The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 &angst;/minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400&deg; C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

High temperature, high flow rate chemical vapor deposition apparatus and related methods

The present invention provides a simplified heater design that is scaleable for equipment processing different diameter substrates and that can efficiently and economically process substrates to meet stringent film requirements such as film uniformity for fabricating high integration devices. The present invention is particularly useful for economically and efficiently producing integrated devices using increasingly larger diameter substrates, such as 12-inch (or 300-mm) diameter and even larger substrates. According to one embodiment, the present invention provides a heater assembly for use in a substrate processing apparatus. The heater assembly includes a metal pedestal including a surface for supporting a substrate, and a resistive heating element disposed in the metal pedestal. The heater assembly also includes a purge gas channel system disposed in the metal pedestal. The purge gas channel system includes a central purge gas inlet located substantially at a center of the metal pedestal. The central purge gas inlet is for providing a purge gas. The purge gas channel system also includes multiple radial purge gas channels radiating from the central purge gas inlet out toward a perimeter of the metal pedestal, and an annular purge gas channel formed in the metal pedestal at the perimeter. The purge gas channels form a substantially symmetric pattern, and each of the purge gas channels are substantially the same length. In a specific embodiment, the assembly includes an annular purge gas channel coupled to the surface via multiple holes near the perimeter to provide a purge guide ring integral to the metal pedestal. Other embodiments of the present invention are also provided.

Heater for use in substrate processing apparatus to deposit tungsten

Temperature controlled process and chamber lid

The present invention provides an approach which provides an increase in the number of usable substrates with a film, such as titanium nitride, deposited thereon at a sufficient deposition rate and where the film meets uniformity and resistivity specifications as well as providing good step coverage. In accordance with an embodiment, the present invention provides an apparatus for substrate processing. The apparatus circulates a heat exchange medium through a passage in a chamber body of a vacuum chamber, and heats a heater pedestal having a surface for supporting the substrate to a heater temperature. The heat exchange medium has a heat exchange temperature of about 60.degree. C. or less. The the apparatus also flows a gas into the chamber at a flow rate to deposit a film on a substrate, where the flow rate provides an effective temperature of the substrate lower than the heater temperature and where the film meets uniformity and resistance specifications after deposition onto a number of substrates. This number is less than twenty-five, in some embodiments, and less than ten in other embodiments. The use of the present invention thus avoids the discarding of the initial hundreds of processed substrates not meeting specifications that is typically experienced with the prior art processes.

Apparatus for substrate processing with improved throughput and yield

Gas manifold

An improved lift mechanism includes a configuration having two sections of bellows welded to a central flange. The central flange provides support for a precisely aligned lift pin support structure. The efficient utilization of space provides space for an enlarged stem while minimizing the interaction between pieces within the processing chamber. Outside the vacuum limits of the processing chamber, a catch arrangement is provided as part of a linkage that allows a single vertical drive to be utilized to manipulate both the vertical motion of lift pins and vertical motion of the pedestal supporting a substrate in a processing chamber. In one configuration a unitized lift mechanism can be replaced as a unit. Particular orientations for utilizing a lift pin support plate with ceramic inserts is disclosed to reduce particle generation within the processing chamber.

Self-aligning lift mechanism

Temperature controlled chamber liner

Vaporization apparatus and process

Growing community of inventors

San Jose, CA, United States of America

Talex Sajoto