University of California

King Abdulaziz City for Science and Technology

Tal Margalith

Steven P DenBaars

Shuji Nakamura

James Stephen Speck

Umesh Kumar Mishra

Stacia Keller

Michael D Craven

Erin C Young

Benjamin P Yonkee

John T Leonard

Robert M Farrell

Asad J Mughal

Stacy J Kowsz

Christopher D Pynn

Matthew S Wong

Lesley Chan

Micro-scale light emitting diodes (micro-LEDs) with ultra-low leakage current results from a sidewall passivation method for the micro-LEDs using a chemical treatment followed by conformal dielectric deposition, which reduces or eliminates sidewall damage and surface recombination, and the passivated micro-LEDs can achieve higher efficiency than micro-LEDs without sidewall treatments. Moreover, the sidewall profile of micro-LEDs can be altered by varying the conditions of chemical treatment.

Method of forming micro-LEDs with ultra-low leakage current

A III-nitride optoelectronic device includes at least one n-type layer, an active region grown on or above the n-type layer, at least one p-type layer grown on or above the active region, and a tunnel junction grown on or above the p-type layer. A conductive oxide may be wafer bonded on or above the tunnel junction, wherein the conductive oxide comprises a transparent conductor and may contain light extraction features on its non-bonded face. The tunnel junction also enables monolithic incorporation of electrically-injected and optically-pumped III-nitride layers, wherein the optically-pumped III-nitride layers comprise high-indium-content III-nitride layers formed as quantum wells (QWs) that are grown on or above the tunnel junction. The optically-pumped high-indium-content III-nitride layers emit light at a longer wavelength than the electrically-injected III-nitride layers.

III-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers

A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.

Hybrid growth method for III-nitride tunnel junction devices

A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).

III-nitride tunnel junction with modified P-N interface

A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (110) a-plane GaN layers are grown on an r-plane (102) sapphire substrate using MOCVD. These non-polar (110) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices

A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (110) a-plane GaN layers are grown on an r-plane (102) sapphire substrate using MOCVD. These non-polar (110) a-plane GaN layers comprise templates for producing non-polar (Al, B, In, Ga)N quantum well and heterostructure materials and devices.

A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar ({overscore ()}) a-plane GaN layers are grown on an r-plane ({overscore ()}) sapphire substrate using MOCVD. These non-polar ({overscore ()}) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.

Growing community of inventors

Santa Barbara, CA, United States of America

Tal Margalith