Sandisk Technologies Inc.

Western Digital Technologies, Inc.

Sandisk Il Ltd.

Tal Heller

Amir Shaharabany

Hadas Oshinsky

Yacov Duzly

Yehuda Hahn

Ori Stern

Einav Zilberstein

Yigal Eli

Menahem Lasser

Rotem Sela

Rajeev Nagabhirava

Damian Pablo Yurzola

Nir Perry

Yoav Markus

Yong Peng

Sukhminder Singh Lobana

Krishnamurthy Dhakshinamurthy

Talal Ahwal

Enosh Levi

Arjun Hary

Akiva Bleyer

Aki Bleyer

Tucker Dean Berckmann

Asaf Garfunkel

Andrew Henry

A storage system and method are provided for flush optimization. In one embodiment, a storage system is provided comprising a cache, a non-volatile memory, and a controller. The controller is configured to: store, in the cache, data received from a host and to be written in the non-volatile memory; receive a command from the host to move the data stored in the cache into the non-volatile memory; without having executed the command, send a confirmation to the host that the command was executed; and execute the command after sending the continuation to the host.

Storage system and method for flush optimization

A device includes a memory and a controller coupled to the memory. The controller is configured to maintain a first address translation table associated with the memory and a second address translation table associated with the memory. The controller is further configured to receive a command to erase the memory. The controller is further configured to switch an indicator of an active address translation table from the first address translation table to the second address translation table in response to receiving the command.

Memory erase management

A storage system uses consumption of transfer RAM as a trigger to enter and exit burst mode. In one embodiment, the storage system stores, in volatile memory, data to be written in non-volatile memory; monitors an allocation level of the volatile memory to determine a first amount of time that the allocation level is at a first level and a second amount of time that the allocation level is at second level; enters burst mode when a ratio of the first amount of time and the second amount of time is above a first threshold; and exits burst mode when the ratio of the first amount of time and the second amount of time is below a second threshold. Other embodiments are possible, and each of the embodiments can be used alone or together in combination.

Storage system and method for burst mode management using transfer RAM

Systems and methods for detecting a file of a predetermined size or greater are disclosed. Files may be downloaded to a storage device via a data stream. The storage device may analyze one or more aspects of the data stream, such as throughput and consistency, in order to determine whether the file is of a predetermined size or greater. In response to determining that the data stream includes a file of at least a predetermined size, the storage device may take one or more actions. One action is to store part or all of the file in a hybrid block, which is a block in non-volatile memory that is accessed (e.g., programmed and/or erased) in a different way than its designation. For example, a block originally designated for multi-level cell (MLC) storage may be programmed for single-level cell (SLC) storage, which is quicker than for MLC. In this way, the storage device may be able to store the downloaded file, with a certain throughput and consistency, without loss of data.

System and method for storing large files in a storage device

A data storage module includes a non-volatile memory and a controller. A method performed in the data storage module includes receiving an overprovision capacity instruction from a host device. The method further includes updating a file system table of the non-volatile memory to indicate, by designating logical addresses in the file system table as being in use, that the logical addresses are used without reducing an amount of free physical space in the non-volatile memory.

Overprovision capacity in a data storage device

A storage module and method for adaptive burst mode are provided. In one embodiment, a storage module is provided comprising a memory and a controller. The controller is configured to receive a plurality of write commands from a host controller in communication with the storage module, store the plurality of write commands in a command queue in the storage module, and choose one of a plurality of burst modes in which to operate the memory based on how many write commands are stored in the command queue.

Storage module and method for adaptive burst mode

Systems and methods for improving NAND flash memory yields by identifying memory blocks with benign word line defects. Memory blocks including word line defects may be classified as incomplete memory blocks and may be used for storing data fragments. A data fragment may correspond with data written into memory cells associated with one or more contiguous word lines within a memory block that does not include a bad word line. In some cases, firmware associated with a NAND flash memory device may identify one or more data fragments based on the location of bad word lines within a memory block. A word line defect may be considered a benign defect if the defect does not prevent memory cells connected to other word lines within a memory block from being programmed and/or read reliably.

NAND flash word line management using multiple fragment pools

A method and system for enhancing efficiency in power failure handling in flash memory devices is disclosed. The method includes the controller of a storage device receiving a page of data, selecting a block having a desired back-up cost and copying previously stored data in the selected block to a back-up block prior to writing the received page to the selected block based on a category of the previously stored data. The system includes non-volatile memory having a plurality of operative blocks, at least one spare block and a controller. The controller is configured to receive a page of data, select an operative block in the memory having a desired back-up cost, and copy previously stored data in the selected block to a spare block based on a category of the previously stored data prior to writing the received page to the selected block.

Enhancement of efficiency in power failure handling in flash memory

Circuitry and method for detecting occurrence of a reflow process to an embedded storage device are disclosed. A temperature sensing device includes a resistor, a temperature sensor, and a comparator. The first terminal of the resistor is coupled to a voltage source, and the second terminal of the resistor is coupled to both the first terminal of the temperature sensor and the first input of the comparator. The second terminal of the temperature sensor is grounded and the second input of the comparator is coupled to a reference voltage. The resistance state of the temperature sensor changes from a first resistance state to a second resistance state when the temperature surrounding the temperature sensor reaches a threshold. The comparator generates an output based on the resistance changes of the temperature sensor. The generated output may indicate whether a reflow process has occurred to the embedded storage device.

Apparatus and method for detecting reflow process

Decorrelation is provided between data stored in respective pairs of adjacent memory cells in a plurality of bit lines of a flash memory. Each of the pairs of adjacent memory cells is located along a respective one of the bitlines and common to two adjacent wordlines. The decorrelation is achieved by storing scrambled data in at least one memory cell of each of the pairs of adjacent memory cells and storing unscrambled data in at least one memory cell of at least one of the pairs of adjacent memory cells.

Growing community of inventors

Aloney Abba, Israel

Tal Heller