Sumitomo Electric Industries, Limited

Takuya Yanagisawa

Yoshiyuki Yamamoto

Keiji Ishibashi

Koji Uematsu

Katsushi Hashio

Yuki Seki

Kazuaki Konoike

Naoki Matsumoto

Seiji Nakahata

Yusuke Yoshizumi

Akihiro Hachigo

Fumitake Nakanishi

Hidenori Mikami

Yuki Hiromura

Yoshiaki Hagi

Yasuaki Higuchi

Muneyuki Nishioka

Kazuaki Kounoike

An indium phosphide single-crystal body has an oxygen concentration of less than 1×10atoms·cm, and includes a straight body portion having a cylindrical shape, wherein a diameter of the straight body portion is more than or equal to 100 mm and less than or equal to 150 mm or is more than 100 mm and less than or equal to 150 mm. An indium phosphide single-crystal substrate has an oxygen concentration of less than 1×10atoms·cm, wherein a diameter of the indium phosphide single-crystal substrate is more than or equal to 100 mm and less than or equal to 150 mm or is more than 100 mm and less than or equal to 150 mm.

Indium phosphide single-crystal body and indium phosphide single-crystal substrate

An indium phosphide single crystal including a straight body portion having a cylindrical shape, wherein a residual strain in a tangential direction in an outer circumferential portion is a compressive strain, the outer circumferential portion extending between an inner circumferential surface located 10 mm inward from an outer circumferential surface of the straight body portion toward a central axis and a location located 5 mm inward from the outer circumferential surface. There is also provided an indium phosphide single crystal substrate, wherein a residual strain in a tangential direction in an outer circumferential portion is a compressive strain, the outer circumferential portion extending between an inner circumference located 10 mm inward from an outer circumference toward a center and a location located 5 mm inward from the outer circumference.

Indium phosphide single crystal and indium phosphide single crystal substrate

An indium phosphide crystal substrate has a diameter of 100-205 mm and a thickness of 300-800 &#x3bc;m and includes any of a flat portion and a notch portion. In any of a first flat region and a first notch region, when an atomic concentration of sulfur is from 2.0&#xd7;10to 8.0&#xd7;10cm, the indium phosphide crystal substrate has an average dislocation density of 10-500 cm, and when am atomic concentration of tin is from 1.0&#xd7;10to 4.0&#xd7;10cmor an atomic concentration of iron is from 5.0&#xd7;10to 1.0&#xd7;10cm, the indium phosphide crystal substrate has an average dislocation density of 500-5000 cm.

Indium phosphide crystal substrate

An indium phosphide single-crystal body has an oxygen concentration of less than 1&#xd7;10atoms&#xb7;cm, and includes a straight body portion having a cylindrical shape, wherein a diameter of the straight body portion is more than or equal to 100 mm and less than or equal to 150 mm or is more than 100 mm and less than or equal to 150 mm. An indium phosphide single-crystal substrate has an oxygen concentration of less than 1&#xd7;10atoms&#xb7;cm, wherein a diameter of the indium phosphide single-crystal substrate is more than or equal to 100 mm and less than or equal to 150 mm or is more than 100 mm and less than or equal to 150 mm.

Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 &#x3bc;m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 &#x3a9;/sq or less.

Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

A semi-insulating compound semiconductor substrate includes a semi-insulating compound semiconductor, the semi-insulating compound semiconductor substrate being configured such that, on a major plane having a plane orientation of (100), a standard deviation/average value of specific resistance measured at intervals of 0.1 mm along equivalent four directions in a &#x3c;110&#x3e; direction from a center of the major plane, and a standard deviation/average value of specific resistance measured at intervals of 0.1 mm along equivalent four directions in a &#x3c;100&#x3e; direction from the center of the major plane are each not more than 0.1.

Semi-insulating compound semiconductor substrate and semi-insulating compound semiconductor single crystal

A group III nitride composite substrate with a diameter of 75 mm or more includes a support substrate and a group III nitride film with a thickness of 50 nm or more and less than 10 &#x3bc;m that are bonded to each other. A ratio s/mof a standard deviation sof the thickness of the group III nitride film to a mean value mof the thickness thereof is 0.01 or more and 0.5 or less, and a ratio s/mof a standard deviation sof an absolute value of an off angle between a main surface of the group III nitride film and a plane of a predetermined plane orientation to a mean value mof the absolute value of the off angle is 0.005 or more and 0.6 or less.

Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same

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Itami, Japan

Takuya Yanagisawa