Semiconductor Energy Laboratory Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Takuya Tsurume

Yoshitaka Dozen

Koji Dairiki

Naoto Kusumoto

Junya Maruyama

Toru Takayama

Yuugo Goto

Hisashi Ohtani

Eiji Sugiyama

Tomoyuki Aoki

Tomoko Tamura

Shunpei Yamazaki

Yumiko Fukumoto

Hidekazu Takahashi

Ryosuke Watanabe

Koichiro Tanaka

Hideaki Kuwabara

Hiroki Adachi

Yumiko Ohno

Takahiro Ibe

Nozomi Horikoshi

Yoshiyuki Kurokawa

Hisao Ikeda

Tomoya Aoyama

Kohei Yokoyama

Kyosuke Ito

Takao Hamada

Etsuko Asano

Satoshi Seo

Yasuyuki Arai

Hideomi Suzawa

Akihisa Shimomura

Tohru Sonoda

Satoshi Inoue

Satoru Okamoto

Akihiro Chida

Kaoru Hatano

Yutaka Okazaki

Yoshinobu Asami

Yasuko Watanabe

Daiki Yamada

Takaaki Nagata

Hiroaki Honda

Rena Tsuruoka

Miyuki Higuchi

A transistor with favorable electrical characteristics is provided. A transistor with stable electrical characteristics is provided. A semiconductor device having a high degree of integration is provided. Side surfaces of an oxide semiconductor layer in which a channel is formed are covered with an oxide semiconductor layer, whereby impurity diffusion from the side surfaces of the oxide semiconductor into the inside can be prevented. A gate electrode is formed by a damascene process, whereby transistors can be miniaturized and formed at a high density.

Transistor including oxide semiconductor, semiconductor device including the transistor, and electronic device including the transistor

A release layer formed over a substrate; at least one of thin film integrated circuits is formed over the release layer; a film is formed over each of the at least one of thin film integrated circuits; and the release layer is removed by using an etchant; thus, the at least one of thin film integrated circuits is peeled from the substrate. A semiconductor device is formed by sealing the peeled thin film integrated circuit by lamination or the like.

Method for manufacturing semiconductor device

To provide a photodetector circuit capable of obtaining signals in different periods without being affected by characteristics of a photoelectric conversion element. The photodetector circuit has n signal output circuits (n is a natural number of 2 or more) connected to the photoelectric conversion element. Further, the n signal output circuits each include the following: a transistor whose gate potential varies in accordance with the amount of light entering the photoelectric conversion element; a first switching element which holds the gate potential of the transistor; and a second switching element which controls a signal output from the transistor. Thus, after data based on the amount of light entering the photoelectric conversion elements is held as the gate potentials of the transistors, the second switching elements are turned on, whereby signals in different periods can be obtained without being affected by characteristics of the photoelectric conversion element.

Photodetector circuit and semiconductor device

An object of the present invention is to provide a semiconductor device having a conductive film, which sufficiently serves as an antenna, and a method for manufacturing thereof. The semiconductor device has an element formation layer including a transistor, which is provided over a substrate, an insulating film provided on the element formation layer, and a conductive film serving as an antenna, which is provided on the insulating film. The insulating film has a groove. The conductive film is provided along the surface of the insulating film and the groove. The groove of the insulating film may be provided to pass through the insulating film. Alternatively, a concave portion may be provided in the insulating film so as not to pass through the insulating film. A structure of the groove is not particularly limited, and for example, the groove can be provided to have a tapered shape, etc.

Semiconductor device and method for manufacturing the same

The present invention provides an antenna in that the adhesive intensity of a conductive body formed on a base film is increased, and a semiconductor device including the antenna. The invention further provides a semiconductor device with high reliability that is formed by attaching an element formation layer and an antenna, wherein the element formation layer is not damaged due to a structure of the antenna. The semiconductor device includes the element formation layer provided over a substrate and the antenna provided over the element formation layer. The element formation layer and the antenna are electrically connected. The antenna has a base film and a conductive body, wherein at least a part of the conductive body is embedded in the base film. As a method for embedding the conductive body in the base film, a depression is formed in the base film and the conductive body is formed therein.

Semiconductor device having antenna and method for manufacturing thereof

It is an object of the invention to improve the production efficiency in sealing a thin film integrated circuit and to prevent the damage and break. Further, it is another object of the invention to prevent a thin film integrated circuit from being damaged in shipment and to make it easier to handle the thin film integrated circuit. The invention provides a laminating system in which rollers are used for supplying a substrate for sealing, receiving IC chips, separating, and sealing. The separation, sealing, and reception of a plurality of thin film integrated circuits can be carried out continuously by rotating the rollers; thus, the production efficiency can be extremely improved. Further, the thin film integrated circuits can be easily sealed since a pair of rollers opposite to each other is used.

Laminating system

A separation layer and a semiconductor element layer including a thin film transistor are formed. A conductive resin electrically connected to the semiconductor element layer is formed. A first sealing layer including a fiber and an organic resin layer is formed over the semiconductor element layer and the conductive resin. A groove is formed in the first sealing layer, the semiconductor element layer, and the separation layer. A liquid is dropped into the groove to separate the separation layer and the semiconductor element layer. The first sealing layer over the conductive resin is removed to form an opening. A set of the first sealing layer and the semiconductor element layer is divided into a chip. The chip is bonded to an antenna formed over a base material. A second sealing layer including a fiber and an organic resin layer is formed so as to cover the antenna and the chip.

It is an object of the present invention to provide a semiconductor device where, even in a case of stacking a plurality of semiconductor elements provided over a substrate, the stacked semiconductor elements can be electrically connected through the substrate, and a manufacturing method thereof. According to one feature of the present invention, a method for manufacturing a semiconductor device includes the steps of selectively forming a depression in an upper surface of a substrate or forming an opening which penetrates the upper surface through a back surface; forming an element group having a transistor so as to cover the upper surface of the substrate and the depression, or the opening; and exposing the element group formed in the depression or the opening by thinning the substrate from the back surface. A means for thinning the substrate can be performed by partially removing the substrate by performing grinding treatment, polishing treatment, etching by chemical treatment, or the like from the back surface of the substrate.

Semiconductor device and manufacturing method thereof

To provide a semiconductor device capable of being easily subjected to a physical test without deteriorating characteristics. According to a measuring method of a semiconductor device in which an element layer provided with a test element including a terminal portion is sealed with first and second films having flexibility, the first film formed over the terminal portion is removed to form a contact hole reaching the terminal portion; the contact hole is filled with a resin containing a conductive material; heating is carried out after arranging a wiring substrate having flexibility over the resin with which filling has been performed so that the terminal portion and the wiring substrate having flexibility are electrically connected via the resin containing a conductive material; and a measurement is performed.

Semiconductor device, manufacturing method thereof, and measuring method thereof

A light-emitting device in which reduction in performance due to moisture is suppressed is provided. The light-emitting device has a structure in which a partition having a porous structure surrounds each of light-emitting elements. The partition having a porous structure physically adsorbs moisture; therefore, in the light-emitting device, the partition functions as a hygroscopic film at a portion extremely close to the light-emitting element, so that moisture or water vapor remaining in the light-emitting device or entering from the outside can be effectively adsorbed. Thus, reduction in performance of the light-emitting device due to moisture or water vapor can be effectively suppressed.

Light-emitting device

A first substrate including, on one of surfaces, a light absorption layer having metal nitride and a material layer which is formed so as to be in contact with the light absorption layer is provided; the surface of the first substrate on which the material layer is formed and a deposition target surface of a second substrate are disposed to face each other; and part of the material layer is deposited on the deposition target surface of the second substrate in such a manner that irradiation with laser light having a repetition rate of greater than or equal to 10 MHz and a pulse width of greater than or equal to 100 fs and less than or equal to 10 ns is performed from the other surface side of the first substrate to selectively heat part of the material layer which overlaps with the light absorption layer.

Deposition method and manufacturing method of light-emitting device

One embodiment of the present invention is a film forming method comprising: arranging a surface of a film formation substrateincluding an absorption layeron a first substrateand a material layercontaining a film formation material and a surface of a film-formation target substrateincluding a first layerover a second substrate, so as to face each other; forming a second layercontaining the film formation material over the first layerby performing first heat treatment on the material layer; and forming a third layercontaining the film formation material over the second layerby performing second heat treatment on the material layer. In the second heat treatment, energy with a density higher than that in the first heat treatment is applied to the material layer.

Film forming method

A conductive layer serving as an auxiliary wiring is formed under a first electrode with a first insulating layer interposed therebetween, and the conductive layer and a second electrode are electrically connected to each other through an opening in the first insulating layer and the first electrode. A second insulating layer is formed over a sidewall of the opening so that the first electrode is not directly in contact with the second electrode in the opening. An EL layer is formed by evaporation in a state where a deposition target substrate is inclined to an evaporation source, so that the second insulating layer serves as an obstacle and a region where the EL layer is not formed by the evaporation and the conductive layer is exposed is formed in part of the opening in a self-aligned manner.

Light emitting device and method for manufacturing thereof

Growing community of inventors

Atsugi, Japan

Takuya Tsurume