Hitachi, Ltd.

Hitachi Displays, Ltd.

Panasonic Liquid Crystal Display Co., Ltd.

The University of Tokyo

Future Vision Inc.

Takuya Takahashi

Toshiki Kaneko

Masanori Sakai

Kenichi Onisawa

Katsumi Tamura

Takaaki Suzuki

Katsumi Mabuchi

Noriyuki Ohnaka

Katsumi Ohsumi

Takahiro Ochiai

Masahiro Ishii

Tetsuya Kawamura

Masatomo Terakado

Tsutomu Kasai

Eiji Kikuchi

Toshihiko Nakata

Makoto Hayashi

Yuichi Ishikawa

Yukihiro Shibata

Hideaki Yamamoto

Atsushi Taniguchi

Makoto Abe

Hiroki Kaneko

Etsuko Nishimura

Masahisa Inagaki

Yoshitaka Kojima

Masaru Takabatake

Taketo Ueno

Hiroshi Toshiyoshi

Masateru Suwa

Hajime Ikeda

Isao Ikuta

Isao Masaoka

Shigeo Hattori

Kazumi Fujii

Masakiyo Izumiya

Toshiaki Arato

Fumio Sato

Kimihiko Akahori

Haruo Fujimori

Hiroshi Yamauchi

Takeshi Satou

Kenichi Chahara

Yuichi Harano

Ken-ichi Onisawa

Kenichi Cyahara

Shun'ichi Matsumoto

Kentaro Motohara

Yoichi Sakaki

Tomoya Katou

Yusuke Isobe

Yoshitaka Tsutsui

An optical filtering device and an optical inspection apparatus for detecting a defect in a high sensitivity using an optical filtering device which includes a shutter array formed in a two-dimensionally on an optically opaque thin film produced on a SOI wafer and the SOI wafer is removed at portions thereof on the lower side of the shutter patterns to form perforation portions while working electrodes are formed at the remaining portion of the SOI wafer, a glass substrate having electrode patterns formed on the surface thereof and having the shutter array mounted thereon, and a power supply section for supplying electric power to the electrode patterns formed on the glass substrate and the working electrodes of the SOI wafer. And the working electrodes is controlled to cause the shutter patterns to carry out opening and closing movements with respect to the perforation portions to carry out optical filtering.

Optical filtering device, defect inspection method and apparatus therefor

A liquid crystal display device and method includes a pair of substrates with liquid crystal sandwiched therebetween, a plurality of intersecting scanning signal lines and image signal lines, a thin film transistor formed corresponding to each intersection, a pixel electrode which is formed in a pixel region and connected to the thin film transistor, a gate insulating film, and a protective insulating film. At least one of the scanning signal lines and the image signal lines are each formed of a laminated film including a first layer and a second layer, wherein the first layer is formed of a copper film having a purity of at least 99.5%, and the second layer is formed of an alloy film containing copper as a main component. The first layer and the second layer are collectively subjected to wet etching with an etchant having a predetermined pH.

Liquid crystal display device and process of manufacture

Provided is a liquid crystal display device capable of significantly reducing occurrence of a failure such as an interlayer short-circuit. In the liquid crystal device, a first layer formed of a copper film having a purity of 99.5% or more and a second layer formed of an alloy film containing copper as a main component are successively formed on a glass substrate or a substrate on which a transparent conductive film containing indium is formed. The alloy film serving as the second layer is made of an alloy containing copper as a main component, which has a higher etching rate in a wet etching process compared with that of copper. Accordingly, a patterned cross-section of the copper film having a large film thickness can be etched in a tapered shape, to thereby improve coverage of an insulating film or the like laminated on a wiring pattern.

A substrate with plane patterns formed in a liquid process wherein the plane patterns are formed based on a combination of plane shapes by which a difference in internal pressure of a solution between any two points of the solution is small, the solution being ejected onto the substrate so as to form the plane patterns by the liquid process.

Substrate with plane patterns and display device using the same

Disclosed is a liquid crystal display device having a signal line of low electrical resistivity and high adhesion with an underlayer, wherein a copper alloy film is formed on an underlayer, and an oxide film, silicide film or nitride film, which are additive metal elements of the copper alloy, is formed at the boundary between the underlayer and the copper alloy film whereby the signal line is formed with a multi-layer film of the copper alloy film and the oxide film, the silicide film, or the nitride film.

Liquid crystal display units with data and/or address lines being formed of copper alloy and method of fabricating the same

A liquid crystal display device has image signal lines of a bottom gate type TFT, in which the image signal lines comprise a laminated film formed of a first conductive film disposed as a lower layer and a second conductive film disposed as an upper layer. The first conductive film is made of an alloy comprising Mo as a main ingredient and W, and the second conductive film is made of an alloy comprising Mo as a main ingredient and Zr. The device is capable of satisfying requirements of reduced resistance, improved dry etching resistance, selective wet etching with respect to the gate insulative film, the number of laminated layer of two or less, and tapered fabrication for the cross section.

Liquid crystal display device

A liquid crystal display unit having one pair of substrates, a liquid crystal layer held between the pair of substrates, a plurality of scanning lines formed on one of the pair of substrates, a plurality of data lines which cross the scanning lines in matrix form, thin film transistors formed near the crossing points of the scanning lines and data lines, and pixel electrodes connected to the thin film transistors. A source electrode and a drain electrode of each thin film transistor, and each data line, are made of a molybdenum alloy having a chromium content in a range of 1.5 weight % to 5 weight %.

Liquid crystal display units with data line being formed of molybdenum alloy having chromium content

A liquid crystal display includes an insulative substrate having a surface treated with an oxygen plasma and a nitrogen-plasma-treated layer formed over said surface of said substrate. A surface of said nitrogen-plasma-treated layer has a nitrogen concentration of about 10 mol % or more.

Liquid crystal display with nitrided insulating substrate for TFT

Liquid crystal display device and wiring structure therefor

A liquid crystal display unit is used that has data lines made of a molybdenum-alloyed film having a chromium content from 2 wt. % or more, but up to 5 wt. %, or a molybdenum-alloyed film lamination (Mo&mdash;Cr) consisting of a first electroconductive film and a second electroconductive film, with the first electroconductive film having a chromium content from 2 wt. % or more, but up to 5 wt. % and the second electroconductive film being provided above the first electroconductive film and containing less chromium than the first electroconductive film does. The use of the data lines composed of these materials enables the following requirements to be satisfied: high dry-etching resistance, low resistance, low ACF contact resistance, low side etching rates, forward tapered wiring cross-sectional shape, and up to two lamination layers.

Liquid crystal display units

A polycrystalline Si thin film transistor substrate having a self-aligned LDD and provided with a gate made of a Mo&mdash;W alloy having a W concentration not lower than 5% by weight and lower than 25% by weight and preferably a W concentration of 17 to 22% by weight, which is formed by a process comprising a wet-etching step using an etching solution having a phosphoric acid concentration of 60% to 70% by weight, has uniform characteristic properties and is excellent in productivity.

Thin film transistor substrate and process for producing the same

The method of fabrication of a liquid crystal display device includes the steps of: forming a metal thin film on a glass substrate; forming a resist pattern on the metal thin film by photolithography; and wet-etching the metal thin film with an etchant formed of a mixture including phosphoric acid, nitric acid in a range between 7 mol % and 12 mol % inclusive, and at least one of ammonium fluoride and hydrogen fluoride in a trace amount of about 0.01 to 0.1 mol %.

Liquid crystal display device and method of manufacturing the same

A liquid crystal display device has good contact characteristics between an etched side end portion of a lower layer wiring line and an insulating film and the like, satisfactory step coverage, and satisfactory adhesion to a substrate so that disconnection of an upper layer wiring line and short-circuiting of the lower layer wiring line can be prevented to improve reliability. The liquid crystal display device comprises a wiring line having a laminated structure including a first layer which is made from a first metal layer formed over an insulating substrate and a second layer which is made from a second metal layer different from the first metal layer and is formed over the first metal layer, and the side end face of the first layer has a right-tapered shape with a taper angle of 60&deg; or less, while the side end face of the second layer is approximately perpendicular to or counter-tapered with respect to the insulating substrate. The second layer has a thickness not greater than &frac12; of that of the first layer.

Liquid crystal display device having wiring line including first and second layers with second layer having a thickness not greater than 1/2 of a thickness of first layer

The composition of an alloy is inhomogeneous, so that the Fermi level of electrons in the surface of the alloy differs depending upon positions. It is accordingly considered that a part susceptible to corrosion and a part less susceptible thereto will coexist in the alloy. The corrosion rate of the alloy is indicated as the exponential function of a potential difference (.DELTA..PHI..sub.H) within an electric double layer. The potential difference remains unchanged as long as the Fermi level lies within the forbidden band of the electrons. However, in a range in which the Fermi level falls within the valence band of the electrons, the lowering thereof leads to the increase of the potential difference. Accordingly, a corrosion-resisting alloy is designed in accordance with the following guidelines: a) The electron energy level (Ev) of the valence band is low, b) an oxide film to be formed on the alloy is an n-type semiconductor, c) a band gap (Ec-Ev) is wide where Ec denotes the conduction band of the electrons, and d) a flatband potential (E.sub.f1) is low. Further, the operation of a plant and the evaluation of a corrosional damage can be based on such a theory.

Method of evaluating corrosion resistance of metal material, method of

A corrosion degree measuring method capable of field measurement for intergranular corrosion, particularly the sensitization degree, of the plant's structural materials in a narrow space. The metal electrode made of a material being measured and the counter electrode to the metal electrode are immersed in an electrolytic solution. A voltage is applied to the metal electrode in the anodic direction so as to raise the potential of the metal electrode up to the passive state potential and to keep the metal electrode at the passive state potential. The passive state potential is used as a reference potential, and a pulse-like potential signal is applied to the metal electrode in the cathodic direction. At the time of the application of the pulse potential signal, a current between the metal electrode and the counter electrode is measured, and the corrosion degree of the material being measured is determined from the intensity of the current.

Method and apparatus for measuring degree of corrosion of metal materials

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Hitachi, Japan

Takuya Takahashi