Kabushiki Kaisha Toshiba

Takuya Shimano

Tetsuya Iizuka

Shuichi Uchikoga

Kouji Suzuki

Kaichi Fukuda

Tomoko Kitazawa

Nobuki Ibaraki

An aperture rate of an active matrix substrate using TFTs can be improved, a short circuit can be prevent from being caused between a pixel electrode and a signal line, or a display defectiveness due to a coupling capacitor can be prevented, and display definition can be improved. A pixel electrode patterned by a back surface exposure technique is formed on a different surface by the presence of an insulating protection film. A source electrode and the pixel electrode are connected to each other by a first contact electrode formed of a transparent conductive film to be connected to a first contact hole formed through the insulating protection film. Since a connecting portion between the source electrode and the pixel electrode through the contact hole and a connecting portion between the pixel electrode and an auxiliary capacitor electrode are transparent conductive films, an aperture rate is not reduced. The pixel electrode and the signal line are formed on the different surface by the presence of the insulating protection film. As a result, no short circuit occurs therebetween. The defectiveness of points caused by the short circuit can be prevented from being generated.

Liquid crystal display device having a TFT switch composed of a separate

A thin-film semiconductor element provided on a channel area with a channel protection layer, characterized by the fact that a source electrode layer and a drain electrode layer respectively have overlapping areas on the channel protection layer, the side walls of the source electrode layer and the drain electrode layer extend in the overlapping areas beyond the side wall of the channel protection layer in at least one direction of the width thereof, and the source electrode layer and the drain electrode layer possess points of overlap intersection with the semiconductor layer at the points of overlap intersection thereof with the channel protection layer. Owing to the construction described above, the leakage current generated by exposure to light can be decreased and the thin-film semiconductor element can be produced by a simple process of manufacture.

Thin-film transistor element having a structure promoting reduction of

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Yokohama, Japan

Takuya Shimano