Tokyo Electron Limited

Takuya Seino

Noriaki Okabe

Yasuhiro Hamada

Yuutaro Kishi

Ryota Kozuka

A method of processing a wafer includes preparing a wafer having a substrate and a silicon-containing film formed on the substrate; forming a hard mask on the silicon-containing film; forming a pattern on the hard mask by etching the hard mask; and etching the silicon-containing film using the hard mask on which the pattern is formed, wherein the hard mask has a first film formed on the silicon-containing film and containing tungsten, and a second film formed on the first film and containing zirconium or titanium and oxygen.

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Tokyo, Japan

Takuya Seino