Canon Anelva Corporation

Takuya Seino

Naomu Kitano

Yuichi Otani

Yu Sato

Akira Matsuo

Kazumasa Nishimura

Takashi Nakagawa

Koji Yamazaki

Manabu Ikemoto

Yoshimitsu Shimane

Yohsuke Shibuya

Eitaro Morimoto

Toru Tatsumi

Heiji Watanabe

Takuji Hosoi

Takayoshi Shimura

Nobuo Yamaguchi

Yoshiaki Daigo

Kazuto Yamanaka

Kimiko Mashimo

Takashi Minami

Shunichi Wakayanagi

Toshikazu Irisawa

Hiroki Date

Sotaro Ishibashi

Hiroki Okuyama

Yuta Murooka

Saki Shibuichi

Eitaroh Morimoto

Yoshitaka Ohtsuka

Takayuki Saito

Hiroyuki Makita

The present invention provides a film formation method and a film formation apparatus which can fabricate an epitaxial film with +c polarity by a sputtering method. In one embodiment of the present invention, the film formation method of epitaxially growing a semiconductor thin film with a wurtzite structure by the sputtering method on an epitaxial growth substrate heated to a predetermined temperature by a heater includes the following steps. First, the substrate is disposed on a substrate holding portion including the heater to be located at a predetermined distance away from the heater. Then, the epitaxial film of the semiconductor film with the wurtzite structure is formed on the substrate with the impedance of the substrate holding portion being adjusted.

Film formation method, vacuum processing apparatus, method of manufacturing semiconductor light emitting element, semiconductor light emitting element, method of manufacturing semiconductor electronic element, semiconductor electronic element, and illuminating apparatus

A method includes: a first film formation process forming a film by sputtering a first insulator target when a projection plane of the first insulator target on a plane including a front face of a substrate is in a first state; and a second film formation process forming a film by sputtering a second insulator target when a projection plane of the second insulator target formed on the plane including the front face of the substrate is in a second state different from the first state. The second film formation process provides the insulating film having a second characteristic variation having opposite tendency to a first characteristic variation in the film provided by the first film formation process, the first characteristic variation occurring from a center portion to a peripheral portion of the substrate, the second characteristic variation occurring at least partly from the center portion to the peripheral portion.

Method of manufacturing tunnel magnetoresistive effect element and sputtering apparatus

This invention provides a manufacturing method of a magnetoresistive effect element having a higher MR ratio than a conventional element. A manufacturing method of a magnetoresistive effect element of an embodiment of the invention includes: a step of forming a tunnel barrier layer on a substrate, on a surface of which one of a magnetization free layer and a magnetization fixed layer is formed; a step of cooling the substrate after the step of forming a tunnel barrier layer; a step of forming an other one of the magnetization free layer and the magnetization fixed layer on the tunnel barrier layer after the step of cooling; and a step of raising a temperature of the substrate after the step of forming the other one of the magnetization free layer and the magnetization fixed layer.

Manufacturing method of magnetoresistive effect element

It was found out that when radicals generated by plasma are fed to a treatment chamber via a plurality of holes () formed on a partition plate which separates a plasma-forming chamber () from the treatment chamber, and the radicals are mixed with a treatment gas which is separately fed to the treatment chamber, the excitation energy of the radicals is suppressed and thereby the substrate surface treatment at high Si-selectivity becomes possible, which makes it possible to conduct the surface treatment of removing native oxide film and organic matter without deteriorating the flatness of the substrate surface. The radicals in the plasma are fed to the treatment chamber via radical-passing holes () of a plasma-confinement electrode plate () for plasma separation, the treatment gas is fed to the treatment chamber () to be mixed with the radicals in the treatment chamber, and then the substrate surface is cleaned by the mixed atmosphere of the radicals and the treatment gas.

Substrate cleaning method for removing oxide film

An embodiment of the present invention is a method of manufacturing a perpendicular MTJ device which includes: a first stacked structure including a pair of CoFeB layers sandwiching an MgO layer; and a second stacked structure including a multilayer, the method comprising the steps of: forming one of the first and second stacked structures on a substrate; inspecting a property of the substrate with the one of the first and second stacked structures formed thereon while exposing the substrate to the atmosphere; and forming another one of the first and second stacked structures on the substrate with the one of the first and second stacked structures formed thereon.

Method of manufacturing perpendicular MTJ device

An oxidation process apparatus according to one embodiment of the present invention includes: a substrate holder provided in a processing chamber and having a substrate holding surface; a gas introduction unit for introducing an oxygen gas; a cylindrical member; and a substrate holder drive unit for changing relative positions of the substrate holder and the cylindrical member to allow the substrate holding surface and the cylindrical member to form an oxidation process space. The cylindrical member is provided so as to form a gap between the cylindrical member and the substrate holder during formation of the space. The oxygen gas is introduced restrictively into the space. The oxygen gas introduced from the gas introduction unit is evacuated through the gap.

Oxidation process apparatus, oxidation method, and method for manufacturing electronic device

Provided is a method for manufacturing a magnetoresistive element, including a step of forming a tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes a deposition step of depositing a metal film on top of a substrate, and an oxidation step of subjecting the metal film to an oxidation process. The oxidation step includes holding the substrate having Mg formed thereon, on a substrate holder in a processing container in which the oxidation process is performed, supplying an oxygen gas to the substrate by introducing the oxygen gas into the processing container, at a temperature at which Mg does not sublime, and heating the substrate after the introduction of the oxygen gas.

Method for manufacturing magnetoresistive element

A magnetoresistance effect element of the present invention includes: a barrier layer; a reference layer formed on one surface of the barrier layer; a free layer formed on the other surface of the barrier layer; and a pinned layer placed on the opposite side of the reference layer from the barrier layer. The pinned layer includes a structure obtained by stacking Ni, Co, Pt, Co, Ru, Co, Pt, Co, and Ni layers in this order.

Magnetoresistance effect element

It is an object of the present invention to provide an electronic component manufacturing method, capable of suppressing reduction in a trench opening and suppressing diffusion of a metal film embedded in a trench. An embodiment of the present invention is an electronic component manufacturing method, including the steps of: forming a first electrode constituting layer (e.g., a TiAl film) in a recess (e.g., a trench) formed in a workpiece; forming an ultrathin barrier layer (e.g., a TiAlN film) by forming a nitride layer by plasma-nitriding a surface of the first electrode constituting layer; and forming a second electrode constituting layer (e.g., an Al wiring layer) on the ultrathin barrier layer.

Electronic component manufacturing method and electrode structure

The present invention provides an electronic component manufacturing method including a step of embedding a metal film. An embodiment of the present invention includes a first step of depositing a barrier layer containing titanium nitride on an object to be processed on which a concave part is formed and a second step of filling a low-melting-point metal directly on the barrier layer under a temperature condition allowing the low-melting-point metal to flow, by a PCM sputtering method while forming a magnetic field by a magnet unit including plural magnets which are arranged at grid points of a polygonal grid so as to have different polarities between the neighboring magnets.

Electronic component manufacturing method including step of embedding metal film

Provided are a semiconductor device which enables reduction of diffusion of Si in the manufacturing process of an MIPS element and suppression of an increase in EOT, and a method of manufacturing the same. An embodiment of the present invention is a semiconductor device including a field effect transistor having a gate insulating film provided on a silicon substrate and a gate electrode provided on the gate insulating film. The gate electrode is a stack-type electrode including a conductive layer containing at least Ti, N, and O (oxygen) and a silicon layer provided on the conductive layer, and the concentration of oxygen in the conductive layer is highest in the side of the silicon layer.

Semiconductor device and manufacturing method thereof

The present invention provides a method and apparatus for manufacturing a semiconductor device using a PVD method and enabling achievement of a desired effective work function and reduction in leak current without increasing an equivalent oxide thickness. A method for manufacturing a semiconductor device in an embodiment of the present invention includes the steps of: preparing a substrate on which an insulating film having a relative permittivity higher than that of a silicon oxide film is formed; and depositing a metal nitride film on the insulating film. The metal nitride depositing step is a step of sputtering deposition in an evacuatable chamber using a metal target and a cusp magnetic field formed over a surface of the metal target by a magnet mechanism in which magnet pieces are arranged as grid points in such a grid form that the adjacent magnet pieces have their polarities reversed from each other.

Method and apparatus for manufacturing semiconductor device

To provide a method of manufacturing a dielectric film having a high dielectric constant. In an embodiment of the present invention, an HfN/Hf laminated film is formed on a substrate on which a thin silicon oxide film is formed and a dielectric film of a metal nitride made of a mixture of Hf, Si, O and N is manufactured by annealing treatment. According to the present invention, it is possible to (1) reduce an EOT, (2) reduce a leak current to Jg=1.0&#xd7;10A/cmor less, (3) suppress hysteresis caused by the generation of fixed charges, and (4) prevent an increase in EOT even if heat treatment at 700&#xb0; C. or more is performed and obtain excellent heat resistance.

Method of manufacturing hafnium-containing and silicon-containing metal oxynitride dielectric film

A dielectric insulating film including HfO or the like is formed by: cleaning a surface of a semiconductor substrate by exposing the substrate surface to a fluorine radical; performing hydrogen termination processing with a fluorine radical or a hydride (SiHor the like); sputtering Hf or the like; and then performing oxidation/nitridation. These steps are carried out without exposing the substrate to atmosphere, thereby making it possible to obtain a C-V curve with less hysteresis and realize a MOS-FET having favorable device characteristics.

Growing community of inventors

Kawasaki, Japan

Takuya Seino