Sony Corporation

Sony Semiconductor Solutions Corporation

Ricoh Company, Ltd.

Eneos Materials Corporation

Jsr Corporation

Sony Group Corporation

Sony Corpotation

Takuya Sano

Yoshiharu Kudoh

Shoji Kobayashi

Toshifumi Wakano

Keisuke Sugiyama

Kiyoshi Hata

Satoshi Saito

Makoto Hidaka

Atsushi Kikuchi

Tomomichi Hoshino

Shohichi Satoh

Yoshiki Ebiko

Takao Watanabe

Toshiyuki Hayakawa

Koji Neya

Takato Fukumoto

Hirofumi Senga

Toshimitsu Kikuchi

Yuto Sakagami

Koki Sakano

Takeshi Akai

Takumi Adachi

Akira Matsumoto

Hiroshi Kubo

Keiji Tatani

Yusuke Otake

Yusuke Tanaka

Hidehiko Fujiwara

Kazunobu Ota

Shinya Kitaoka

Mamoru Kambayashi

Atsushi Kanaya

Takehisa Shimazu

Fumiyuki Heishi

Ryusei Naito

Michitaka Kaizu

Hiroki Iwashita

Hideo Harifuchi

Eiichi Tauchi

Norio Kimura

Takashi Saito

Takashi Nakano

Kenichiro Morita

Jun Yamada

Takuya Morinaga

Michitaka Suzuki

Naoki Sugiyama

Shingo Matsushita

Joh Ebara

Ryuji Yoshida

Susumu Komiyama

Kyosuke Nakada

Ikuhisa Okamoto

Atsushi Fujita

Takashi Fukumoto

Ryoji Tanaka

Akihiro Musha

Hideki Tobinaga

Takaya Ochiai

Koichiro Tani

Satoshi Kura

Shota Watanabe

Masashi Shimakage

Junji Koujina

Teruo Aoyama

Kunpei Kobayashi

Masataka Fukuchi

Keita Nakagawa

Takeo Nakamura

Tatsumoto Nakahama

Kazushi Urayama

Jiro Ueda

Akihiko Okubo

Masatada Satoh

A cross-linked product obtained through crosslinking a polymer composition that contains a rubber component, an inorganic filler and a cross-linking agent and that satisfies conditions (a) to (c): (a) the rubber component contains a conjugated diene-based polymer (A) having, when composition ratios (molar ratios) in the conjugated diene-based polymer (A) of structural units represented by formulae (1) to (4) are p, q, r, and s, respectively, a value α represented by formula (i) of 0.80 or more and 0.97 or less; (b) a blending ratio of the conjugated diene-based polymer (A) is 10% by mass or more relative to a total amount of the rubber component; and (c) a blending ratio of the inorganic filler is 40 to 150 parts by mass relative to 100 parts by mass of the rubber component, wherein the Tg of the cross-linked product is −25° C. or lower.

Cross-linked product and tire

A hydrogenated conjugated diene-based polymer which has a structure formed by bonding a nitrogen-containing compound having two or more alkoxysilyl groups and two or more nitrogen atoms with a plurality of conjugated diene-based polymer chains, wherein: when a composition ratio (molar ratio) in the hydrogenated conjugated diene-based polymer of each of a structural unit represented by formula (1), a structural unit represented by formula (2), a structural unit represented by formula (3), and a structural unit represented by formula (4) is p, q, r, and s, respectively, a value a represented by formula (i) is 0.80 or more and 0.97 or less, and an equilibrium storage modulus E' of the hydrogenated conjugated diene-based polymer is 2.4 MPa or more,α=(+(0.5×))/(+(0.5×)+)  (i)

Hydrogenated conjugated diene polymer, polymer composition, crosslinked body and tire

Disclosed is a light receiving element including an on-chip lens, a wiring layer, and a semiconductor layer disposed between the on-chip lens and the wiring layer. The semiconductor layer includes a photodiode, a first transfer transistor that transfers electric charge generated in the photodiode to a first charge storage portion, a second transfer transistor that transfers electric charge generated in the photodiode to a second charge storage portion, and an interpixel separation portion that separates the semiconductor layers of adjacent pixels from each other, for at least part of the semiconductor layer in the depth direction. The wiring layer has at least one layer including a light blocking member. The light blocking member is disposed to overlap with the photodiode in a plan view.

Light receiving element, ranging module, and electronic apparatus

A polymer composition includes a conjugated diene polymer (A) and a compound (B). The compound (B) is at least one compound selected from the group consisting of a polysiloxane compound and a fluorine-containing compound. The conjugated diene polymer (A) contains, when the composition ratios (molar ratios) in the polymer of the structural units represented by formulas (1) to (4) are p, q, r, and s, respectively, a polymer (A-1) satisfying formula (i).0.75≤(+(0.5×))/(+(0.5×)+)≤0.95  Formula (i):

Polymer composition, crosslinked body, and tire

A polybutadiene composition which enables the achievement of a rubber material that has excellent crack propagation resistance and a method for producing this polybutadiene composition are provided. A polybutadiene composition is produced by a method that comprises a step Y wherein 1,3-butadiene is polymerized in the presence of 1,2-polybutadiene and a lanthanoid catalyst. A polybutadiene composition which contains 1,2-polybutadiene and 1,4-polybutadiene, and which is obtained by polymerizing 1,3-butadiene in the presence of 1,2-polybutadiene and a lanthanoid catalyst.

Polybutadiene composition and method for producing same

Provided is a block polymer including two or more polymer block As each having a value β of 0.20 or less and a functional group F containing at least one element selected from a group consisting of nitrogen, silicon, oxygen, and sulfur in a part or all of terminals of the two or more polymer block As, in which the block polymer has a value α of 0.75 or more, when p, q, r and s are defined as a component proportion (molar proportion) of a structural unit represented by Formula (1), a component proportion of a structural unit represented by Formula (2), a component proportion of a structural unit represented by Formula (3), and a component proportion of a structural unit represented by Formula (4), in the polymer, respectively.

Block polymer, polymer composition, and adhesive

There is provided a polymer composition using which a molded product having excellent balance between rigidity, wear resistance, viscoelastic properties, and heat resistance can be obtained. A polymer composition according to the disclosure includes (A) a conjugated diene rubber (where, a polymer corresponding to the following component (B) is excluded); and (B) a hydrogenated product of a polymer that satisfies the following (1) to (3), which is a polymer in which 80% or more of structural units derived from butadiene are hydrogenated:

Polymer composition, crosslinked polymer, and tire

A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include photoelectric conversion units is arranged; a peripheral circuit unit that is formed in a lower portion in the substrate depth direction of the pixel region and that includes an active element; and a light shielding member that is formed between the pixel region and the peripheral circuit unit and that shields the incidence of light, emitted from an active element, to the photoelectric conversion unit.

Solid state imaging device and electronic apparatus

To improve accuracy of distance measurement using a Z pixel having the same size as size of a visible light pixel. In a solid-state imaging apparatus, a visible light converting block includes a plurality of visible light converting units in which light receiving faces for receiving visible light are disposed and configured to generate electric charges in accordance with a light receiving amount of the received visible light, and a visible light electric charge holding unit configured to exclusively hold the electric charges respectively generated by the plurality of visible light converting units in periods different from each other. An infrared light converting block includes a plurality of infrared light converting units in which light receiving faces which have substantially the same size as size of the light receiving faces of the visible light converting units and which receive infrared light are disposed and configured to generate electric charges in accordance with a light receiving amount of the received infrared light, and an infrared light electric charge holding unit configured to collectively and simultaneously hold the electric charges respectively generated by the plurality of infrared light converting units.

Solid-state imaging apparatus, imaging system, and distance measurement methods

Exposure with sufficient optical energy is enabled while avoiding temperature rise of laser light emitting elements. Therefore, a light source device includes the plurality of laser light emitting elements and a drive unit. The drive unit drives each of the laser light emitting elements to perform a plurality of light emissions in one frame period in an image sensor that receives and captures light emitted from the plurality of laser light emitting elements and reflected by a subject.

Light source device, image sensor, and sensing module

The present technology relates to a light receiving element, an imaging element, and an imaging device. A light receiving element includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer. The semiconductor layer includes a first voltage application unit to which a first voltage is applied, a second voltage application unit to which a second voltage is applied, a first charge detection unit, and a second charge detection unit. The wiring layer includes at least one layer including first voltage application wiring configured to supply the first voltage, second voltage application wiring configured to supply the second voltage, and a reflection member that overlaps the first charge detection unit or the second charge detection unit, in plan view. The present technology, for example, can be applied to a light receiving element configured to measure a distance.

Light receiving element, imaging element, and imaging device

The present disclosure relates to a solid-state imaging device and an electronic device that are configured to suppress the occurrence of noise and white blemishes in an amplification transistor having an element separation region which is formed by ion implantation. An amplification transistor has an element separation region formed by ion implantation. A channel region insulating film which is at least a part of a gate insulating film above a channel region of the amplification transistor is thin compared to a gate insulating film of a selection transistor, and an element separation region insulating film which is at least a part of a gate insulating film above the element separation region of the amplification transistor is thick compared to the channel region insulating film. The present disclosure can be applied to, for example, a CMOS image sensor, etc.

Solid state image sensor and electronic device

Rubber composition, crosslinked product, and tire

Growing community of inventors

Kanagawa, Japan

Takuya Sano