Seiko Epson Corporation

Epson Toyocom Corporation

Takuya Owaki

Kunihito Yamanaka

Naohisa Obata

Keigo Iizawa

Takao Morita

Hideyuki Kanno

Yuji Mitsui

Yuzuru Yoshizawa

Kenichi Hano

Makoto Takamuku

Mikio Shigemori

Takeshi Kobayashi

Yuichi Takebayashi

A temperature-compensated oscillator includes a resonator element, an oscillating circuit, and a temperature compensation circuit, and in a case of varying temperature in a temperature range of &#xb1;5&#xb0; C. centered on a reference temperature in intervals of 6 minutes, and assuming observation period as &#x3c4;, a wander performance fulfills a condition that an MTIE value is equal to or shorter than 6 ns in a range of 0 s&#x3c;&#x3c4;&#x2264;0.1 s, the MTIE value is equal to or shorter than 27 ns in a range of 0.1 s&#x3c;&#x3c4;&#x2264;1 s, the MTIE value is equal to or shorter than 250 ns in a range of 1 s&#x3c;&#x3c4;&#x2264;10 s, the MTIE value is equal to or shorter than 100 ns in a range of 10 s&#x3c;&#x3c4;&#x2264;1700 s, and the MTIE value is equal to or shorter than 6332 ns in a range of 100 s&#x3c;&#x3c4;&#x2264;1000 s.

Oscillator, electronic apparatus, and vehicle

A temperature-compensated oscillator includes a resonator element, an oscillating circuit, and a temperature compensation circuit, and a frequency deviation with respect to a frequency at a time point when power supply starts is within a range of &#xb1;8 ppb at a time point when 10 seconds elapse from when the power supply starts, within a range of &#xb1;10 ppb at a time point when 20 seconds elapse from when the power supply starts, and within a range of &#xb1;10 ppb at a time point when 30 seconds elapse from when the power supply starts.

An oscillator includes a resonator element; and a semiconductor device including an oscillation circuit which outputs an oscillation signal by oscillating the resonator element, a temperature compensation circuit which compensates for temperature characteristics of a frequency of the oscillation signal, and a first surface in which a terminal that is electrically connected to the resonator element is disposed. The semiconductor device overlaps the resonator element in a planar view. Frequency deviation of the oscillation signal, which is compensated for by the temperature compensation circuit, is greater than or equal to &#x2212;150 ppb and smaller than or equal to +150 ppb in a temperature range from &#x2212;5&#xb0; C. to +85&#xb0; C.

Oscillator including first and second containers for housing resonator and semiconductor device

The present disclosure is directed to a method of manufacturing an oscillator. The oscillator includes a resonator element, an oscillation circuit which outputs an oscillation signal by oscillating the resonator element, and a temperature compensation circuit which compensates for temperature characteristics of a frequency of the oscillation signal in a desired temperature range. The method includes a first temperature compensation adjustment step in which the frequency is measured at multiple temperatures, and first temperature compensation data is calculated based on a relationship between temperature and the frequency. The method also includes performing a second temperature compensation adjustment step in which, after the first temperature compensation adjustment step, the frequency that is obtained by performing temperature compensation by the temperature compensation circuit based on the first temperature compensation data is measured at multiple temperatures, and second temperature compensation data is calculated based on a relationship between temperature and the frequency.

Method of manufacturing oscillator, oscillator, electronic apparatus, and moving object

A temperature-compensated piezoelectric oscillator as an oscillator includes a piezoelectric resonator incorporating a resonator element, an electronic component (IC) as a circuit element having a function of driving the resonator element and a thermosensor, and a wiring board provided with a conductor film, and the piezoelectric resonator element and the electronic component (IC) are disposed side by side in an area where the conductor film is disposed.

Oscillator, electronic apparatus, and moving object

A semiconductor integrated circuit includes a semiconductor substrate on which an oscillation circuit that generates an oscillation signal by oscillating a resonation element, and a plurality of output circuits that outputs signals based on the oscillation signal, are integrated. A package contains the semiconductor integrated circuit and the resonation element. In the semiconductor integrated circuit, an operation of a first output circuit and an operation of a second output circuit, among a plurality of output circuits, are controlled independently from each other.

Semiconductor integrated circuit, oscillator, electronic apparatus, and moving object

A surface acoustic wave resonator includes: an IDT which is disposed on a quartz substrate with Euler angles of (&#x2212;1&#xb0;&#x2266;&#x3c6;&#x2266;1&#xb0;, 117&#xb0;&#x2266;&#x3b8;&#x2266;142&#xb0;, 42.79&#xb0;&#x2266;|&#x3c8;|&#x2266;49.57&#xb0;), which is made of Al or alloy including Al as a main component and which excites a surface acoustic wave in an upper mode of a stop band; and an inter-electrode-finger groove which is formed by recessing the quartz substrate between electrode fingers which form the IDT. Here, the following expression is satisfied:0.01&#x2003;&#x2003;(1),where &#x3bb; represents a wavelength of the surface acoustic wave and G represents a depth of the inter-electrode-finger groove. The depth G of the inter-electrode-finger groove and a line occupancy &#x3b7; of the IDT satisfy the following expression: and a number of pairs N of the electrode fingers in the IDT is in the range of the following expression:160&#x2266;220&#x2003;&#x2003;(19).

Surface acoustic wave resonator, surface acoustic wave oscillator, and electronic apparatus

A surface acoustic wave resonator includes a quartz substrate with preselected Euler angles and an IDT on the quartz substrate. The IDT includes electrode fingers and excites a stop band upper end mode surface acoustic wave. Inter-electrode finger grooves are provided between the electrode fingers. Assuming a surface acoustic wave wavelength is &#x3bb;, an electrode finger film thickness is H, an inter-electrode finger groove depth is G, a line occupation rate of convex portions of the substrate between the inter-electrode finger grooves is &#x3b7;g, and a line occupation rate of the electrode fingers on the convex portions is &#x3b7;e, 0.0407&#x3bb;&#x2266;G+H; and &#x3b7;g&#x3e;&#x3b7;e.

A SAW device has an IDT which is provided on the principal surface of a quartz crystal sustrate having Euler angles (&#x2212;1.5&#xb0;&#x2266;&#x3c6;&#x2266;1.5&#xb0;, 117&#xb0;&#x2266;&#x3b8;&#x2266;142&#xb0;, &#x3c8;) and excites a SAW in a stopband upper end mode. Inter-electrode-finger groovesare recessed between the electrode fingers of the IDT. When the Euler angle &#x3c8; is 42.79&#xb0;&#x2266;|&#x3c8;|&#x2266;49.57&#xb0;, the thickness H of the electrode fingers of the IDT is set to be within 0.055 &#x3bc;m&#x2266;H&#x2266;0.335 &#x3bc;m, preferably, 0.080 &#x3bc;m&#x2266;H&#x2266;0.335 &#x3bc;m. When the Euler angle &#x3c8; is |&#x3c8;|&#x2260;90&#xb0;&#xd7;n (where n=0, 1, 2, 3), and the thickness H of the electrode fingers is set to 0.05 &#x3bc;m&#x2266;H&#x2266;0.20 &#x3bc;m.

Surface acoustic wave device, electronic apparatus, and sensor apparatus

A surface acoustic wave resonator has a quartz crystal substrate having Euler angles of (&#x3c6;=0&#xb0;, 110&#xb0;&#x2266;&#x3b8;&#x2266;150&#xb0;, 88&#xb0;&#x2266;&#x3c8;&#x2266;92&#xb0;) and an IDT having a plurality of electrode fingers disposed on the quartz crystal substrate, and using a surface acoustic wave as an excitation wave, a plurality of grooves arranged in a propagation direction of the surface acoustic wave to form stripes is disposed on the quartz crystal substrate, and the electrode fingers are disposed one of between the grooves and inside the grooves.

Surface acoustic wave resonator, surface acoustic wave oscillator, and electronic device

A surface acoustic wave resonator includes a quartz crystal substrate with Euler angles (&#x2212;1.5&#xb0;&#x2266;&#x3c6;&#x2266;1.5&#xb0;, 117&#xb0;&#x2266;&#x3b8;&#x2266;142&#xb0;, and 42.79&#xb0;&#x2266;|&#x3a8;|&#x2266;49.57&#xb0;), and an IDT provided on the quartz crystal substrate that includes a plurality of electrode fingers and excites a stop band upper end mode surface acoustic wave. Inter-electrode finger grooves are provided between the electrode fingers. If a line occupation rate of the convex portions of the quartz crystal substrate disposed between the inter-electrode finger grooves is &#x3b7;g, and a line occupation rate of the electrode fingers disposed on the convex portions is &#x3b7;e, &#x3b7;&#x3e;&#x3b7;and 0.59&#x3c;&#x3b7;&#x3c;0.73 are satisfied when an effective line occupation rate &#x3b7;eff of the IDT is an arithmetic mean of the line occupation rate &#x3b7;g and the line occupation rate &#x3b7;e.

A surface acoustic wave device includes: a quartz substrate with Euler angles of (&#x3c6;, &#x3b8;, &#x3c8;); and an IDT which excites a surface acoustic wave in an upper mode of a stop band; wherein, the Euler angle &#x3c6; is &#x2212;60&#xb0;&#x2266;&#x3c6;&#x2266;60&#xb0;, and the Euler angle &#x3c6; determines the ranges of the Euler angles &#x3b8; and &#x3c8;.

Surface acoustic wave device, surface acoustic wave oscillator, and electronic apparatus

An SH wave type surface acoustic wave device includes a piezoelectric substrate and an IDT electrode provided on the piezoelectric substrate and constituted of Al or an alloy mainly containing Al and that uses a SH wave as an excitation wave. The piezoelectric substrate is a crystal plate in which a cut angle &#x3b8; of a rotary Y cut quartz substrate is set in a range of &#x2212;64.0&#xb0;&#x3c;&#x3b8;&#x3c;&#x2212;49.3&#xb0; in a counter-clockwise direction from a crystal axis Z and in which a surface acoustic wave propagation direction is set at 90&#xb0;&#xb1;5&#xb0; with respect to a crystal axis X. An electrode film thickness H/&#x3bb; standardized by a wavelength of the IDT electrode is 0.04&#x3c;H/&#x3bb;&#x3c;0.12, where &#x3bb; is a wavelength of the surface acoustic wave to be excited, and a main surface of the piezoelectric substrate is etched by a thickness of 0.002 &#x3bc;m or more.

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Minowa, Japan

Takuya Owaki