Sumitomo Electric Device Innovations, Inc.

Sumitomo Electric Industries, Limited

Takuya Okimoto

Yoshihiro Yoneda

Hideki Yagi

Koji Ebihara

Kenji Sakurai

Munetaka Kurokawa

Ryuji Masuyama

Naoko Konishi

Takuya Mitarai

A semiconductor optical device includes a substrate a spot-size converter, an optical detector, a core layer and a first III-V compound semiconductor layer, the core layer is disposed between the substrate and the first III-V compound semiconductor layer, the optical detector includes a light absorbing layer, a second III-V compound semiconductor layer, and an insulating film,

Semiconductor optical device

A light receiving device includes a semiconductor substrate having a first major surface and a second major surface opposite to the first major surface, and a metal pattern layer provided on the second major surface. The first major surface is provided with a first input port configured to receive an input of signal light, a second input port configured to receive an input of local oscillation light, a first light receiving element optically coupled to the first input port, an optical 90 degree hybrid element optically coupled to the first input port and the second input port, and a second light receiving element optically coupled to the optical 90 degree hybrid element. The metal pattern layer contains at least one of titanium or chromium.

Light receiving device and light receiving apparatus

A photo receiver includes a photo detector including a semiconductor substrate having a first main surface and a second main surface and a metal pattern layer provided on the second main surface; and a carrier including a supporting substrate having a third main surface facing the second main surface and a solder pattern layer provided on the third main surface. The solder pattern layer is bonded to the metal pattern layer. The first main surface is provided with a variable optical attenuator, an optical 90-degree hybrid device, and a plurality of photodiodes optically coupled to the variable optical attenuator via the optical 90-degree hybrid device. The solder pattern layer and the metal pattern layer are located in a peripheral area surrounding a central area where the variable optical attenuator and the optical 90-degree hybrid device are located when viewed in the normal direction of the first main surface.

Photo receiver

A semiconductor light receiving element includes a first semiconductor layer, a waveguide type photodiode structure, an optical waveguide structure, and a fourth semiconductor layer. The waveguide type photodiode structure is provided on the first semiconductor layer. The waveguide type photodiode structure includes an optical absorption layer, a second semiconductor layer, a multiplication layer, and a third semiconductor layer. The optical waveguide structure is provided on the first semiconductor layer. The optical waveguide structure includes an optical waveguiding core layer and a cladding layer. An end face of the waveguide type photodiode structure faces to an end face of the optical waveguide structure. The fourth semiconductor layer is located between the end face of the waveguide type photodiode structure and the end face of the optical waveguide structure. The fourth semiconductor layer contacts the multiplication layer at the end face of the waveguide type photodiode structure.

Semiconductor light receiving element with mesa type photodiode structure

An optical waveguide type photodetector includes a first semiconductor layer of a first conductive type, a multiplication layer of a first conductive type on the first semiconductor layer, an optical waveguide structure, and a photodiode structure. The photodiode structure has a third semiconductor layer of a second conductive type, an optical absorption layer of an intrinsic conductive type or of a second conductive type, and a second semiconductor layer of a second conductive type. The optical waveguide structure includes an optical waveguiding core layer and a cladding layer. An end face of the photodiode structure located in a second region of the first semiconductor layer and an end face of the optical waveguide structure located in a first region of the first semiconductor layer are in contact.

Optical waveguide type photodetector

A photo detector includes a variable optical attenuator provided on a substrate, an optical 90-degree hybrid device provided on the substrate, and a plurality of photodiodes provided on the substrate. The plurality of photodiodes are optically coupled to the variable optical attenuator via the optical 90-degree hybrid device. The variable optical attenuator includes an optical waveguide disposed on the substrate, a heater configured to heat the optical waveguide, and an insulating layer at least partially disposed between the substrate and the optical waveguide.

Photo detector and method for producing photo detector

A photodiode (PD) device that monolithically integrates a PD element with a waveguide element is disclosed. The PD device includes a conducting layer with a first region and a second region next to the first region, where the PD element exists in the first region, while, the waveguide element exists in the second region and optically couples with the PD element. The waveguide element includes a core layer and a cladding layer on the conducting layer, which forms an optical confinement structure. The PD element includes an absorption layer on the conducting layer and a p-type cladding layer on the absorption layer, which form another optical confinement structure. The absorption layer has a length at least 12 &#x3bc;m measured from the interface against the core layer.

Photodiode device monolithically integrating waveguide element with photodiode element type of optical waveguide

An optical semiconductor device comprises a semiconductor substrate, an optical 90-degree hybrid circuit provided on the substrate, a plurality of input optical waveguides provided on the substrate, and a plurality of output optical waveguides provided on the substrate. The plurality of input optical waveguides is optically coupled to input ends of the optical 90-degree hybrid circuit. The plurality of output optical waveguides is optically coupled to output ends of the optical 90-degree hybrid circuit. Each of the plurality of input optical waveguides includes a first curving portion and a first straight portion adjacent to the first curving portion, and each of the plurality of output optical waveguides includes a second curving portion. A central axis of the first curving portion is inwardly offset with respect to a central axis of the first straight portion, and a central axis of the second curving portion follows a raised sine curve.

Optical semiconductor device

A semiconductor integrated optical device includes: a supporting base including semi-insulating semiconductor; a first photoelectric convertor having first photodiode mesas; a second photoelectric convertor having second photodiode mesas; a first 90&#xb0; optical hybrid having at least one first multimode waveguide mesa; a second 90&#xb0; optical hybrid having at least one second multimode waveguide mesa; an optical divider mesa; first and second input waveguide mesas coupling the first and second 90&#xb0; optical hybrids with the optical divider mesa, respectively; a conductive semiconductor region disposed on the supporting base, the conductive semiconductor region mounting the first photodiode mesas, the second photodiode mesas, the first multimode waveguide mesas, the second multimode waveguide mesas, and the optical divider mesa; a first island semiconductor mesa extending between the first and second multimode waveguide mesas; and a first groove extending through the first island semiconductor mesa and the conductive semiconductor region to the semi-insulating semiconductor.

Semiconductor integrated optical device

A functional optical device applicable to a coherent optical communication system as a front end device is disclosed. The functional optical device includes a pair of light-receiving elements of a type of waveguide photodiode (PD), a pair of signal pads, a pair of ground pads, a bias pad, and a substrate that monolithically integrates those elements thereon. The light-receiving elements generate a photocurrent complementary to each other in respective anodes thereof; while, receive biases through the bias pad common to the light-receiving elements. Those pads are disposed along an edge of the substrate such that the signal pads put the bias pads therebetween, and the ground pads put the signal pads and the bias pad therebetween.

Semiconductor optical device monolithically integrating optical waveguides with photodiodes having a shared bias pad and apparatus implementing the same

A functional optical device is disclosed. The functional optical device integrates a coupling unit, a waveguide photodiode (PD) and an optical waveguide on a semiconductor substrate. The coupling unit extracts an optical signal by performing interference of signal light with local light. The optical waveguide carries the optical signal from the coupling unit to the waveguide PD. The semiconductor substrate provides a heavily doped conducting layer and a buffer layer that is un-doped or lightly doped with n-type impurities by density smaller than density of impurities in the heavily doped conducting layer. The conducting layer and the buffer layer continuously and evenly extend from the optical waveguide to the waveguide PD.

Growing community of inventors

Yokohama, Japan

Takuya Okimoto