Sumitomo Electric Hardmetal Corp.

Sumitomo Electric Industries, Limited

Takuya Nohara

Akihiko Ueda

Yutaka Kobayashi

Yoshiki Nishibayashi

Natsuo Tatsumi

Satoru Kukino

Hitoshi Sumiya

Takashi Harada

Gaku Harada

Mayuka Segawa

Yoshinori Tanigawa

Soichiro Kakinoki

A single-crystal diamond includes n types of regions different in total concentration of an impurity, the n types of regions being observed in an observed surface being in parallel to a (110) face. Each of the n types of regions has an area not smaller than 0.1 μm. At least one of a first line, a second line, and a third line on the observed surface crosses a boundary between the n types of regions at least four times. The first line, the second line, and the third line are in parallel to a <−110> direction and have a length of 1 mm. A midpoint of the first line corresponds to the center of gravity of the observed surface. The second line and the third line are distant from the first line by 300 μm in a <001> direction and a <00−1> direction, respectively.

Single-crystal diamond and method of manufacturing the same

A turning tool includes: a holder portion; and a cutting edge portion fixed to the holder portion, wherein the cutting edge portion is composed of a synthetic single-crystal diamond, and the cutting edge portion has a nose curvature having a curvature radius of more than or equal to 0.1 mm and less than or equal to 1.2 mm, and the nose curvature satisfies at least one of a condition that a direction of a line of intersection between the rake face and a bisecting cross section of a vertex angle of the nose curvature is within ±10° relative to a <110> direction of the synthetic single-crystal diamond, and a condition that the direction of the line of intersection between the rake face and the bisecting cross section of the vertex angle of the nose curvature is within ±10° relative to a <100> direction of the synthetic single-crystal diamond.

Turning tool

Cutting tool

Provided is a method for manufacturing a single-crystal diamond, the method including the steps of: forming a protective film on at least a part of a surface of an auxiliary plate; preparing a diamond seed crystal substrate; disposing an auxiliary plate with a protective film that has the protective film formed on the auxiliary plate, and a diamond seed crystal substrate in a chamber; and growing a single-crystal diamond on a principal surface of the diamond seed crystal substrate by a chemical vapor deposition method while introducing a carbon-containing gas into the chamber.

Single-crystal diamond, method for manufacturing single-crystal diamond, and chemical vapor deposition device used in same

A single-crystal diamond includes a pair of main surfaces facing each other, an impurity concentration being changed along a first direction in each of the main surfaces.

Single-crystal diamond, tool using same, and method of producing single-crystal diamond

Growing community of inventors

Itami, Japan

Takuya Nohara