Tokyo Electron Limited

Tokyo Electron Limi Ted

Takuya Nishijima

Atsushi Sawachi

Suguru Sato

Ichiro Sone

Jun Hirose

Shin Matsuura

A substrate processing apparatus includes a first chamber having an inner space and an opening, a substrate support disposed in the inner space of the first chamber, an actuator configured to move the substrate support between a first position and a second position, a second chamber that is disposed in the inner space of the first chamber and defines a substrate processing space together with the substrate support when the substrate support is located at the first position, and at least one fixing mechanism configured to detachably fix the second chamber to the first chamber in the inner space of the first chamber. The second chamber is transferred between the inner space of the first chamber and an outside of the first chamber through the opening when the substrate support is located at the second position.

Substrate processing apparatus

A part replacement system includes a part storage device configured to store an unused consumable part, and a replacement device that is connected to a processing device and the part storage device, the replacement device being configured to replace a used consumable part installed in the processing device with the unused consumable part stored in the part storage device. The replacement device is moved to a position of the processing device having the used consumable part that requires replacement, and the replacement device is connected to the processing device, and the part storage device is moved to a position of the replacement device connected to the processing device having the used consumable part that requires replacement, and the part storage device is connected to the replacement device.

Part replacement system and part replacement device

A substrate processing apparatus is provided. The substrate processing apparatus comprise: a first chamber including a sidewall providing an opening, the first chamber further including a movable part movable upward and downward within the first chamber; a substrate support disposed within the first chamber; a second chamber disposed within the first chamber and defining, together with the substrate support, a processing space in which a substrate mounted on the substrate support is processed, the second chamber being separable from the first chamber and transportable between an inner space of the first chamber and the outside of the first chamber via the opening; a clamp releasably fixing the second chamber to the movable part extending above the second chamber; a release mechanism configured to release the fixing of the second chamber by the clamp; and a lift mechanism configured to move the movable part upward and downward.

Substrate processing apparatus, substrate processing system, and maintenance method

A measuring device for a vacuum processing apparatus including a processing chamber having a first gate for loading and unloading a substrate and a second gate different from the first gate is provided. The measuring device includes a case having art opening that is sized to correspond to the second gate of the processing chamber and is airtightly attachable to the second gate, a decompressing mechanism configured to reduce a pressure in the case, and a measuring mechanism accommodated in the case and configured to measure a state in the processing chamber through the opening in a state where the pressure in the case is reduced by the decompressing mechanism.

Measuring device, measuring method, and vacuum processing apparatus

A processing apparatus includes a first temperature measuring unit configured to measure a surface temperature of a first member exposed in a first closed space, a supply line configured to supply a low-dew point gas into the first closed space and a control unit configured to control a flow rate of the low-dew point gas. The control unit performs a first process to a third process. In the first process, an absolute humidity of a gas within the first closed space at a position of a surface of the first member is specified for the flow rate of the low-dew point gas. In the second process, a saturated absolute humidity at the surface temperature of the first member is specified. In the third process, the flow rate of the low-dew point gas is controlled based on the absolute humidity of the gas and the saturated absolute humidity.

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Miyagi, Japan

Takuya Nishijima