Panasonic Corporation

Riken Corporation

Panasonic Intellectual Property Management Co., Ltd.

Takuya Mino

Hideki Hirayama

Takayoshi Takano

Norimichi Noguchi

Jun Sakai

Kenji Tsubaki

Takanori Aketa

Hitomichi Takano

Masafumi Jo

The conductive device includes a substrate and an electrically conductive portion. The electrically conductive portion is provided on the substrate. The electrically conductive portion includes an electrically conductive part and a low resistance conductive layer. The electrically conductive part is provided on the substrate and includes an electrically conductive particle and an organic binder. The low resistance conductive layer covers at least part of a surface of the electrically conductive part and has lower resistivity than the electrically conductive part.

Conductive device, method for producing conductive device, and radio

An ultraviolet light-emitting element includes: a multilayer stack in which an n-type AlGaN layer, a light-emitting layer, a first p-type AlGaN layer, and a second p-type AlGaN layer are arranged in this order; a negative electrode; and a positive electrode. The first p-type AlGaN layer has a larger Al composition ratio than first AlGaN layers serving as well layers. The second p-type AlGaN layer has a larger Al composition ratio than the first AlGaN layers. The first p-type AlGaN layer and the second p-type AlGaN layer both contain Mg. The second p-type AlGaN layer has a higher maximum Mg concentration than the first p-type AlGaN layer. The second p-type AlGaN layer includes a region where an Mg concentration increases in a thickness direction thereof as a distance from the first p-type AlGaN layer increases in the thickness direction.

Ultraviolet light-emitting element

An epitaxial substrate includes: a single crystal substrate including projections arranged in an array on a plane. Each projection has a conical or pyramidal shape tapered in a normal direction to the plane. The AlN layer includes: a first AlN crystal covering the plane and the projections with tips of the projections being exposed; second AlN crystals protruding from the tips of the projections along the normal direction and each having a shape of a column whose cross-sectional area increases as a distance from a tip of a corresponding projection increases; and a third AlN crystal as a layer interconnecting ends of the second AlN crystals, opposite the single crystal substrate.

Epitaxial substrate

A UV LED element, which is an exemplary ultraviolet light-emitting diode according to the present invention, includes an n-type conductive layer, a light-emitting layer, an electron block layer, and a p-type contact layer, all of which are arranged in this order. Bandgap energy of the electron block layer satisfies E&#x2264;E, where Edesignates bandgap energy of the p-type contact layer and Edesignates the bandgap energy of the electron block layer. The electric apparatus includes the UV LED element as a light source for emitting an ultraviolet ray.

Ultraviolet light-emitting diode and electric apparatus provided with the same

An ultraviolet light emitting element includes a light emitting layer, a cap layer, an electron barrier layer. The light emitting layer has a multi-quantum well structure including barrier layers each including a first AlGaN layer and well layers each including a second AlGaN layer. The electron barrier layer includes at least one first p-type AlGaN layer and at least one second p-type AlGaN layer. The cap layer is located between the first p-type AlGaN layer and one of the well layers closest to the first p-type AlGaN layer. The cap layer is a third AlGaN layer having an Al composition ratio greater than an Al composition ratio of each of the well layers and less than an Al composition ratio of the first p-type AlGaN layer. The cap layer has a thickness of greater than or equal to 1 nm and less than or equal to 7 nm.

Ultraviolet light emitting element and electrical device using same

In a method of manufacture for a nitride semiconductor light emitting element including: a monocrystalline substrate; and an AlN layer; and a first nitride semiconductor layer of a first electrical conductivity type; and a light emitting layer made of an AlGaN-based material; and a second nitride semiconductor layer of a second electrical conductivity type, a step of forming the AlN layer includes: a first step of supplying an Al source gas and a N source gas into the reactor to generate a group of AlN crystal nuclei having Al-polarity to be a part of the AlN layer on the surface of the monocrystalline substrate; and a second step of supplying the Al source gas and the N source gas into the reactor to form the AlN layer, after the first step.

Growing community of inventors

Osaka, Japan

Takuya Mino