Sharp Kabushiki Kaisha Corporation

Semiconductor Energy Laboratory Co., Ltd.

Other

Japan Tobacco Inc.

Sharp Kabushiki Kaisha, Co., Ltd.

Takuya Matsuo

Hiroshi Matsukizono

Shigeyasu Mori

Hidehito Kitakado

Naoki Makita

Kenichi Okazaki

Yosuke Kanzaki

Masayuki Sakakura

Hideto Ohnuma

Yoshitaka Yamamoto

Takeshi Noda

Junichi Koezuka

Tatsuya Arao

Tadayoshi Miyamoto

Aiko Shiga

Seiichi Uchida

Yasuyuki Ogawa

Kazuatsu Ito

Hidekazu Miyairi

Yukinori Shima

Setsuo Nakajima

Makoto Nakazawa

Masatoshi Yokoyama

Mitsunobu Miyamoto

Katsumi Nomura

Shunpei Yamazaki

Saishi Fujikawa

Tsutomu Murakawa

Yukihiko Nakata

Misako Nakazawa

Yutaka Takamaru

Takashi Itoga

Yasuhiro Mitani

Etsuko Asano

Takashi Yokoshima

Masaki Fujihara

Masatomo Honjo

Takayuki Yamasaki

Masanori Kyoho

Michiteru Ayukawa

Masahiro Date

Hiroyuki Miyake

Masahiro Takahashi

Toshinari Sasaki

Yoshifumi Tanada

Hiroshi Yamamoto

Yasuharu Hosaka

Kenji Kasahara

Yohsuke Kanzaki

Takashi Hamada

Seiji Kaneko

Takao Saitoh

Naoya Sakamoto

Masahiro Katayama

Takashi Inaba

Takahiro Yamasaki

Takahiro Sato

Manabu Sato

Shunsuke Koshioka

Takayuki Cho

Masafumi Inoue

Akihiro Oda

Masahiro Sakata

Taku Ikenogami

Takahisa Motomura

Keisuke Ide

Shinji Yata

Koichi Suzawa

Yoshikazu Hori

Takashi Watanabe

Wataru Kondo

Takao Ito

Tsubasa Takeichi

Hirotsugu Ito

Naoki Ogawa

Takahiro Oka

Yoshihisa Koga

Kazutaka Ikegashira

Tatsuya Matsumoto

Hidekazu Ozeki

Yasuyuki Kajimoto

Yukishige Ikemoto

A display device according to the disclosure includes a substrate, a first transistor provided on the substrate, and a second transistor provided on the substrate, not overlapping the first transistor. The first transistor includes a polycrystalline silicon layer provided on the substrate, a first insulating film provided on the polycrystalline silicon layer, a first gate electrode provided on the first insulating film, and a second insulating film provided on the first gate electrode. The second transistor includes an oxide semiconductor layer provided on the first insulating film, a third insulating film provided on the oxide semiconductor layer, and a second gate electrode provided on the third insulating film. The first and third insulating films are SiOx films. The second insulating film is an SiNx film including hydrogen, and is provided overlapping the polycrystalline silicon layer, and is provided not overlapping the oxide semiconductor layer.

Display device including thin film transistors performing different functionality having different materials

Display device and production method for display device

A production method of a compound represented by the formula [I]: or a pharmaceutically acceptable salt thereof, or a hydrate thereof.

Production method for pyrazole-amide compound

A semiconductor device includes, a plurality of oxide semiconductor TFTs including a first gate electrode, a first insulating layer in contact with the first gate electrode, an oxide semiconductor layer opposing the first gate electrode via the first insulating layer, a source electrode and a drain electrode which are connected with the oxide semiconductor layer, and an organic insulating layer covering only some of the plurality of oxide semiconductor TFTs, wherein the plurality of oxide semiconductor TFTs include a first TFT which is covered with the organic insulating layer and a second TFT which is not covered with the organic insulating layer, and the second TFT includes a second gate electrode opposing the oxide semiconductor layer via a second insulating layer, the second gate electrode being arranged to overlap with at least a portion of the first gate electrode with the oxide semiconductor layer interposed therebetween.

Semiconductor device including a plurality of thin-film transistors with one thin-film transistor including two gate electrodes

To provide a novel semiconductor device in which a reduction in channel length is controlled. The semiconductor device includes an oxide semiconductor layer having a crystal part, and a source electrode layer and a drain electrode layer which are in contact with the oxide semiconductor layer. The oxide semiconductor layer includes a channel formation region and an n-type region in contact with the source electrode layer or the drain electrode layer. The crystal orientation of the crystal part is different between the channel formation region and the n-type region.

Semiconductor device and display device comprising an oxide semiconductor channel region having a different crystal orientation than source/drain regions

Variation in the electrical characteristics of transistors is minimized and reliability of the transistors is improved. A display device includes a pixel portionand a driver circuit portionoutside the pixel portion. The pixel portion includes a pixel transistor, a first insulating layerwhich covers the pixel transistor and includes an inorganic material, a second insulating layerwhich is over the first insulating layer and includes an organic material, and a third insulating layerwhich is over the second insulating layer and includes an inorganic material. The driver circuit portion includes a driving transistor for supplying a signal to the pixel transistor, and the first insulating layer covering the driving transistor. The second insulating layer is not formed in the driver circuit portion.

Display device comprising a metal oxide semiconductor channel and a specified insulating layer arrangement

A semiconductor device (A) includes a substrate (), an oxide semiconductor layer () formed on the substrate (), source and drain electrodes () electrically connected to the oxide semiconductor layer (), a first transparent electrode () electrically connected to the drain electrode (), a dielectric layer () formed on the source and drain electrodes (), and a second transparent electrode () formed on the dielectric layer (). The upper and/or lower surface(s) of the first transparent electrode () contacts with a reducing insulating layer () with the property of reducing an oxide semiconductor included in the oxide semiconductor layer (). The second transparent electrode () overlaps at least partially with the first transparent electrode () via the dielectric layer (). The oxide semiconductor layer () and the first transparent electrode () are formed out of the same oxide film.

Semiconductor device and method for producing same

An object is to suppress conducting-mode failures of a transistor that uses an oxide semiconductor film and has a short channel length. A semiconductor device includes a gate electrode, a gate insulating filmformed over the gate electrode, an oxide semiconductor filmover the gate insulating film, and a source electrodeand a drain electrodeformed over the oxide semiconductor film. The channel length L of the oxide semiconductor film is more than or equal to 1 &#x3bc;m and less than or equal to 50 &#x3bc;m. The oxide semiconductor film has a peak at a rotation angle 2&#x3b8; in the vicinity of 31&#xb0; in X-ray diffraction measurement.

Semiconductor device and manufacturing method thereof

A semiconductor device includes: a transistor including a gate electrode, a gate insulating film over the gate electrode, a semiconductor layer over the gate insulating film, and a source electrode and a drain electrode over the semiconductor layer; a first insulating film comprising an inorganic material over the transistor; a second insulating film comprising an organic material over the first insulating film; a first conductive film over the second insulating film and in a region overlapping with the semiconductor layer; a third insulating film comprising an inorganic material over the first conductive film; and a second conductive film over the third insulating film and in a region overlapping with the first conductive film. The absolute value of a first potential applied to the first conductive film is greater than the absolute value of a second potential applied to the second conductive film.

Semiconductor device and display device

A semiconductor device includes a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film in contact with the gate insulating film and including a channel formation region which overlaps with the gate electrode; a source electrode and a drain electrode over the oxide semiconductor film; and an oxide insulating film over the oxide semiconductor film, the source electrode, and the drain electrode. The source electrode and the drain electrode each include a first metal film having an end portion at the end of the channel formation region, a second metal film over the first metal film and containing copper, and a third metal film over the second metal film. The second metal film is formed on the inner side than the end portion of the first metal film.

Oxide semiconductor device and manufacturing method therof

To improve the reliability of a transistor as well as to inhibit fluctuation in electric characteristics. A display device includes a pixel portion and a driver circuit portion outside the pixel portion; the pixel portion includes a pixel transistor, a first insulating film covering the pixel transistor and including an inorganic material, a second insulating film including an organic material over the first insulating film, and a third insulating film including an inorganic material over the second insulating film; and the driver circuit portion includes a driving transistor to supply a signal to the pixel transistor, the first insulating film covering the driving transistor, and the second insulating film over the first insulating film, and further includes a region in which the third insulating film is not formed over the second insulating film or a region in which the second insulating film is not covered with the third insulating film.

Display device and electronic device

This semiconductor device (A) includes: a substrate (); a gate electrode () and a first transparent electrode () which are formed on the substrate (); a first insulating layer () formed over the gate electrode () and the first transparent electrode (); an oxide semiconductor layer () formed on the first insulating layer (); source and drain electrodes () electrically connected to the oxide semiconductor layer (); and a second transparent electrode () electrically connected to the drain electrode (). At least a portion of the first transparent electrode () overlaps with the second transparent electrode () with the first insulating layer () interposed between them, and the oxide semiconductor layer () and the second transparent electrode () are formed out of the same oxide film.

This TFT substrate (A) includes: a gate connecting layer () formed on a substrate () out of a same conductive film as a gate electrode () or a transparent connecting layer () formed on the substrate () out of a same conductive film as a first transparent electrode (); an oxide layer () which is formed on an insulating layer () and which includes at least one conductor region (); and a source connecting layer () formed on the oxide layer () out of a same conductor film as a source electrode (). The source connecting layer () is electrically connected to either the gate connecting layer () or the transparent connecting layer () via the at least one conductor region ().

This semiconductor device (A) includes: a substrate (); a gate electrode () formed on the substrate (); a gate insulating layer () formed over the gate electrode (); an oxide semiconductor layer () formed on the gate insulating layer (); source and drain electrodes () electrically connected to the oxide semiconductor layer (); a first transparent electrode () electrically connected to the drain electrode (); an interlayer insulating layer () including a dielectric layer () formed over the source and drain electrodes (); and a second transparent electrode () formed on the interlayer insulating layer (). At least a portion of the second transparent electrode () overlaps with the first transparent electrode () with the dielectric layer () interposed between them, and the oxide semiconductor layer () and the first transparent electrode () are formed out of the same oxide film.

Semiconductor device having transparent electrodes

Provided is a semiconductor device in which generation of a parasitic channel in an end region of an oxide semiconductor film is suppressed. The semiconductor device includes a gate electrode, an oxide semiconductor film, a source electrode and a drain electrode, and a channel region formed in the oxide semiconductor film. The channel region is formed between a first side surface of the source electrode and a second side surface of the drain electrode opposite to the first side surface. The oxide semiconductor film has an end region which does not overlap with the gate electrode. The end region which does not overlap with the gate electrode is positioned between a first region that is the nearest to one end of the first side surface and a second region that is the nearest to one end of the second side surface.

Field effect device with oxide semiconductor layer

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Osaka, Japan

Takuya Matsuo