National Institute of Advanced Industrial Science and Technology

Mitsubishi Heavy Industries Limited

Takuya Matsui

Yoshiaki Takeuchi

Shinya Nakano

Michio Kondo

Hitoshi Sai

The present invention realizes a hole-selective film provided with both hole selectivity and passivation characteristics. This production method for a semiconductor device is provided with a step for forming a titanium oxide film on a crystalline silicon layer by means of a thermal atomic layer deposition method, and a step for carrying out a hydrogen plasma process on the titanium oxide film.

Semiconductor device and solar cell and production method for semiconductor device

A process for producing a photovoltaic device that can improve the power generation characteristics of a solar cell having a heterojunction composed of a p-type crystalline Ge (substrate), an i-type amorphous silicon semiconductor layer, and an n-type amorphous silicon semiconductor layer. A process for producing a photovoltaic device () comprising a heterojunction cell () prepared by sequentially stacking an i-type amorphous silicon semiconductor layer () and an n-type amorphous silicon semiconductor layer () on top of a substrate (p-type crystalline Ge ()), the process comprising a PHexposure treatment stage of adjusting the temperature of the substrate (), from which a surface oxide film has been removed, to a prescribed temperature, and subsequently placing the substrate in a vacuum chamber and exposing the substrate to PH, an i-layer deposition stage of depositing the i-type amorphous silicon semiconductor layer () on the PH-exposed substrate, an n-layer deposition stage of depositing the n-type amorphous silicon semiconductor layer () on the i-type amorphous silicon semiconductor layer (), and an electrode formation stage of forming electrodes () on the surface of the n-type amorphous silicon semiconductor layer, and on the back surface of the substrate ().

Growing community of inventors

Tsukuba, Japan

Takuya Matsui