Kobe Steel, Ltd.

Kabushiki Kaisha Kobe Seiko Sho

Mitsubishi Materials Silicon Corporation

Takuya Masui

Takao Fujikawa

Kohei Suzuki

Yutaka Narukawa

Makoto Kadoguchi

Tetsuya Nakai

Jun Furukawa

Mitsuru Sudou

A wiring film, which can be formed into wiring for ULSI semiconductor circuits, is formed by first forming holes in an insulating film on a substrate; then depositing a metallic material of copper, copper alloy, silver or silver alloy into the holes under an atmosphere including hydrogen; and finally annealing the deposited metallic material. The metallic material can be deposited by a sputtering process in which the atmosphere includes an inert gas in addition to the hydrogen. Hydrogen doped in the metallic material during the sputtering process promotes diffusion of atoms in the metallic material. The diffusion eliminates voids in the deposited metallic material.

Method of forming a wiring film by applying high temperature/high pressure

A hot isostatic pressing treatment is conducted for a single crystal body ( ) in an atmosphere where the single crystal body ( ) is stable, under a pressure of 0.2 to 304 MPa at a temperature which is 0.85 or more times the melting point in an absolute temperature unit of the single crystal body ( ), for 5 minutes to 20 hours; and the single crystal body ( ) is annealed. It is preferable that the atmosphere where the single crystal body ( ) is stable is an inert gas atmosphere or an atmosphere containing vapor of a high vapor pressure element, and it is more preferable that the HIP treatment is conducted under a pressure of 10 to 200 MPa. Further, the single crystal body ( ) may be an ingot of a silicon single crystal, a GaAs single crystal, an InP single crystal, a ZnS single crystal or a ZnSe single crystal, or a block or wafer obtained by slicing the ingot. In this way, there are expelled or dispersed those lattice defects such as vacancy type grown-in defects existing not only at the surface but also at the interior of the single crystal body ( ), irrespectively of the size of the single crystal body ( ).

Method of removing defects of single crystal material and single crystal material from which defects are removed by the method

A method of forming an intact wiring film by applying a filling treatment with a metal material with no pores to holes/trenches, the method comprising forming a barrier layer,to an insulation film,having holes/trenches,A, forming a seed layer by a PVD method on the surface of the barrier layer and laminating a wiring film,A by a electrolytic plating method and heat treating the same under a high temperature/high pressure gas atmosphere.

Method of forming a wiring film

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Hyogo, Japan

Takuya Masui