Sony Semiconductor Solutions Corporation

Renesas Electronics Corporation

Sony Corporation

Nec Electronics Corporation

Takuya Maruyama

Tsutomu Imoto

Ryota Watanabe

Takuro Murase

Yuji Isogai

Shinya Sato

Shohei Shimada

Shinichiro Yagi

Shouichirou Shiraishi

Toshifumi Wakano

Yusuke Otake

Atsumi Niwa

Takahiro Maruyama

Koji Neya

Atsushi Suzuki

Takeshi Yamazaki

Yusuke Ikeda

Naoya Inoue

Masaaki Shinohara

Daisuke Oshida

Yuji Suzuki

Hidenori Sato

Manabu Iguchi

Takuya Hagiwara

Kyohei Mizuta

Shinichirou Etou

Kenichi Takamiya

Yotaro Goto

Ippei Kume

Makoto Ueki

Nobuaki Hamanaka

Hiroaki Sekikawa

Yukihiro Ando

Toshiji Taiji

Hirokazu Katsuyama

Ren Hiyoshi

Provided is a light receiving element capable of lowering the on-voltage of a transfer transistor and suppressing transfer failures at a low on-voltage. The light receiving element includes a plurality of pixels arranged in a matrix, each of the plurality of pixels including: a photoelectric conversion unit; first and second charge storage units that store charges generated by the photoelectric conversion unit; first and second transfer transistors that transfer the charges from the photoelectric conversion unit to the first and second charge storage units, respectively; first and second amplification transistors that amplify potentials of the first and second charge storage units, respectively; and a connection wiring that electrically connects the first charge storage unit and the first amplification transistor, wherein a first transfer control wiring electrically connected to a gate of the first transfer transistor of each of the pixels in the same row extends in a row direction in a first wiring layer, and the connection wiring extends to the first wiring layer.

Light receiving element and distance measuring device

A manufacturing method of a semiconductor device includes a step of preparing a semiconductor substrate having a first main surface and a second main surface, a step of forming a recess in the first main surface and embedding an insulating film in the recess, a step of forming a polysilicon film on the insulating film, a step of forming an interlayer insulating film on the first main surface so as to cover the insulating film and the polysilicon film, and a step of forming a first contact hole and a second contact hole. The semiconductor substrate has a first impurity diffusion region formed in the first main surface, and a second impurity diffusion region in contact with a portion of the first impurity diffusion region, the portion being closer to the second main surface.

Manufacturing method of semiconductor device

The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving the accuracy of phase difference detection while suppressing degradation of a picked-up image. There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion. The present technology is applicable to, for example, a CMOS image sensor including a pixel for detecting the phase difference.

Solid-state imaging device and electronic apparatus

The present technology relates to a light-receiving element and a distance-measuring module for enabling improvement of characteristics. A light-receiving element includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer, the semiconductor layer includes a first voltage application portion to which a first voltage is applied, a second voltage application portion to which a second voltage different from the first voltage is applied, a first charge detection portion arranged around the first voltage application portion, and a second charge detection portion arranged around the second voltage application portion, and the wiring layer includes at least one ground line having a wider line width than a power supply line. The present technology can be applied to, for example, a light-receiving element that generates distance information by a ToF method.

Light-receiving element and distance-measuring module

Suppressing a dead period at the time of mode switching. A solid-state imaging device includes: a plurality of pixels () that each outputs a luminance change of incident light; and a detection circuit () that outputs an event signal based on the luminance change output from each of the pixels, in which each of the pixels includes: a photoelectric conversion element () that generates a charge according to an incident light amount; a logarithmic conversion circuit () that is connected to the photoelectric conversion element and converts a photocurrent flowing out of the photoelectric conversion element into a voltage signal corresponding to a logarithmic value of the photocurrent; and a first transistor () having a drain connected to a sense node of the logarithmic conversion circuit.

Solid-state imaging device with transistor drain connected to sense node of logarithmic conversion circuit

Solid-state imaging devices are disclosed. In one example, a solid-state imaging device includes detection pixels that each output a luminance change of incident light, a detection circuit that outputs an event signal based on the luminance change, and a first common line connecting the detection pixels to each other. Each of the detection pixels may include a photoelectric conversion element, a logarithmic conversion circuit that outputs a voltage signal corresponding to a logarithmic value of photocurrent from the photoelectric conversion element, a first circuit that outputs a luminance change of incident light based on the voltage signal, a first transistor connected between the photoelectric conversion element and the logarithmic conversion circuit, and a second transistor connected between the photoelectric conversion element and the first common line. The detection circuit includes a second circuit that outputs the event signal based on the luminance change output from each of the detection pixels.

Solid-state imaging device and imaging device

The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving the accuracy of phase difference detection while suppressing degradation of a picked-up image.

The present technology relates to a light receiving element and a ranging module that can improve characteristics. A light receiving element includes: light receiving regions each including a first voltage application unit to which a first voltage is applied, a first charge detection unit provided around the first voltage application unit, a second voltage application unit to which a second voltage different from the first voltage is applied, and a second charge detection unit provided around the second voltage application unit; and an isolation portion that is arranged at a boundary between the light receiving regions adjacent to each other, and isolates the light receiving regions from each other. The present technology can be applied to a light receiving element.

Light receiving element and ranging module having a plurality of pixels that each includes voltage application units and charge detection units

There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion.

The present technology relates to a light-receiving element and a distance measurement module. A light-receiving element includes: a first voltage application unit to which a voltage is applied; a first charge detection unit that is disposed at a periphery of the first voltage application unit; a second voltage application unit to which a voltage is applied; a second charge detection unit that is disposed at a periphery of the second voltage application unit; a third voltage application unit to which a first voltage is applied; and a voltage control unit that applies a second voltage to one of the first voltage application unit and the second a voltage application unit and causes the other to be in a floating state, the second voltage being different from the first voltage. The present technology is applicable to a light-receiving element.

Light-receiving element and distance measurement module using indirect time of flight

The present technology relates to a light reception device and a distance measurement module whose characteristic can be improved. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer. The semiconductor layer includes a first tap having a first voltage application portion and a first charge detection portion arranged around the first voltage application portion, and a second tap having a second voltage application portion and a second charge detection portion arranged around the second voltage application portion. Furthermore, the light reception device is configured such that a phase difference is detected using signals detected by the first tap and the second tap. The present technology can be applied, for example, to a light reception device that generates distance information, for example, by a ToF method, and so forth.

Light reception device and distance measurement module

A manufacturing method of a semiconductor device includes: (a) forming a gate structure for a control gate electrode on a semiconductor substrate; (b) forming a charge storage film so as to cover a first side surface, a second side surface, and an upper surface of the gate structure; (c) forming a conductive film for a memory gate electrode on the charge storage film; (d) removing a part of the charge storage film and a part of the conductive film such that the charge storage film and the conductive film remain in this order on the first side surface and the second side surface of the gate structure, thereby forming the memory gate electrode; and (e) removing apart of the gate structure separate from the first side surface and the second side surface such that a part of the semiconductor substrate is exposed from the gate structure.

Light receiving element and ranging module having light receiving regions and an isolation portion between adjacent light receiving regions

The present technology relates to a light reception device and a distance measurement module. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer between the on-chip lens and the wiring layer. The semiconductor layer includes a first tap to which a first voltage is applied and a first charge detection portion, and a second tap to which a second voltage different from the first voltage is applied and a second charge detection portion. The position of the on-chip lens differs depending upon an in-plane position of a pixel array section, so that an optical path length or a DC contrast of a chief ray from an object is uniform at in-plane pixels of the pixel array section. The present technology can be applied, for example, to a light reception device that generates distance information, for example, by a ToF method, and so forth.

A light-receiving element includes an on-chip lens; an interconnection layer; and a semiconductor layer that is disposed between the on-chip lens and the interconnection layer. The semiconductor layer includes a first voltage application unit to which a first voltage is applied, a second voltage application unit to which a second voltage different from the first voltage is applied, a first charge detection unit that is disposed at the periphery of the first voltage application unit, a second charge detection unit that is disposed at the periphery of the second voltage application unit, and a charge discharge region that is provided on an outer side of an effective pixel region. For example, the present technology is applicable to a light-receiving element that generates distance information in a ToF method, or the like.

Growing community of inventors

Kanagawa, Japan

Takuya Maruyama