Kabushiki Kaisha Kobe Seiko Sho

Leo Corporation

Takuya Kusaka

Yutaka Kawata

Koji Inoue

Chitaka Manabe

Koyo Kegasa

Yuichiro Goto

Kozo Nishimura

Hiroyuki Takamatsu

Hiroyuki Tachibana

Yoshiro Nishimoto

Hidehisa Hashizume

Mitsuo Terada

Yasuhide Nakai

Kiyotaka Ishibashi

Akimitsu Nakaue

Kouji Inoue

Yoshihiko Onishi

Futoshi Ojima

Takayoshi Inoue

Yukito Furukawa

Akira Kobayashi

Ken-ichi Inoue

Yasuji Yoneda

Hiroshi Kajikawa

Shigeki Tojyo

Toshiji Suzuki

Tetsuo Tokumura

Hiroshi Imada

Shinichi Imaoka

Naoki Tamura

Hideo Ikeda

Yuichi Iwasa

Hidenori Sakai

In a frequency converter, a phase-locked loop generates a local-oscillation signal having a low frequency, of a plurality of local-oscillation signals having different frequencies, based on an intermediate frequency beacon signal that results from mixing a predetermined beacon signal with the local-oscillation frequency signal. Even if the phase-locked loop is used to generate the low frequency local-oscillation signal only, a frequency offset and a phase noise taking place in remaining high frequency local-oscillation signals are compensated for or canceled out. The frequency converter thus results in a high frequency accuracy. This arrangement reduces the number of bulky, costly and power-consuming phase-locked oscillators, typically used in the quasi millimeter band or the millimeter band. A simplified, compact frequency converter is thus provided, reducing both installation and operating costs.

Frequency converter and radio communications system employing the same

An apparatus for measuring the life time of minority carriers includes a light source for irradiating a first region of a semiconductor wafer, a microwave generator for generating microwaves, a transmission line for transmitting a first part of the generated mark raised to the region of the semiconductor wafer that is radiated by the excitation light and a second portion of the generated microwave to a region of the semiconductor wafer that is not radiated by the excitation light. The intensity of the microwave signals reflected from the semiconductor wafer are detected and the life time of the minority carriers is calculated based upon the detected intensities.

Apparatus for measuring the life time of minority carriers of a

A charged particle accelerator capable of accelerating arbitrarily charged particles to an arbitrary energy level and resonating at a low frequency suitable for accelerating heavy ions, including quadruple electrodes which are supplied with high frequency power and disposed in the direction of the center axis of a cylinder-shaped container and a resonant circuit having a capacitor and an inductor for supplying a voltage to the quadruple electrodes. The capacitor is composed of a plurality of metallic plates provided along the center axis at specified intervals in the vicinity of the quadruple electrodes, and a plurality of conductive supports supporting the metallic plates which are directly connected to the container together with the supports and the container form the inductor. Since the metallic plates and the quadruple electrodes are electrically directly connected to each other, an arbitrary resonant frequency can be obtained by adjusting the intervals between the plurality of metallic plates with a position adjusting mechanism. In one embodiment, flat electrodes are protruded from opposite sides of the inner wall of the container and are disposed in parallel to the center axis and close to each other to constitute a capacitor, which makes it possible to have a resonant frequency in a low frequency range. To obtain a large Q value, the surface current resistance is lowered by covering the inner wall of the container and the surfaces of the flat plate electrodes with a superconductive material.

Charged particle accelerator

An apparatus for detecting position/variance of input light is disclosed which includes a photoelectric conversion device receiving input light constituted of a first resistive layer formed of a first photoelectric conversion material and a second resistive layer formed of a second photoelectric conversion material connected with the first resistive layer through a depletion layer or directly, wherein the first resistive layer is provided with uniform resistivity throughout its surface so that a linear output proportional to the average of the distances between one end of the photoelectric conversion device and positions of the input light is detected and the second resistive layer is provided with resistivity dependent upon the distance from its one end so that a quandratic ouput proportional to the average of the squares of the distances between one end of the photoelectric conversion device and positions of the input light is detected.

Method and apparatus for detecting position/variance of input light

A method an apparatus for measuring the distance to a target wherein FM wave is transmitted to the target and its reflected wave is received. A beat wave is then obtained using the thus-received wave and the FM wave. A sine wave is mixed with the beat wave and a first sideband wave of a plurality of sideband waves of the resultant mixed wave is obtained. Another sine wave is mixed with the sideband wave. Then, a second sideband wave of the thus-obtained mixed wave is separated and detected. In the above manner, phase modulation is applied directly to the above-described beat wave. Information pertaining to distance can then be obtained from the number of peaks of the thus-modulated beat wave. A microwave profile meter suitable for use in the determination of the surface profile of a burden in a blast furnace is also disclosed.

Distance measurement method making use of electromagnetic wave and

Growing community of inventors

Kobe, Japan

Takuya Kusaka