Matsushita Electric Works, Ltd.

Other

Panasonic Electric Works Co., Ltd.

Tokyo Electron Limited and Matsushita Electric Works, Ltd.

Takuya Komoda

Tsutomu Ichihara

Koichi Aizawa

Yoshiaki Honda

Yoshifumi Watabe

Takashi Hatai

Nobuyoshi Koshida

Toru Baba

Yoshiyuki Takegawa

Yukihiro Kondo

Junji Kido

Yasushi Yagi

Nobuhiro Ide

Mitsuru Ushijima

Hiroshi Fukshima

Masahiko Suzumura

Kazushi Kataoka

Naomasa Oka

Hiroaki Kitamura

Kazushi Tomii

Koshi Akedo

Chousei Hamada

Toshiroh Abe

Jyunji Ikeda

Yoshifumi c/o Matsushita Electric Works Ltd Watabe

Tsutomu c/o Matsushita Electric Works Ltd Ichihara

Yoshiaki 42-6 Koaza Sunano Honda

Apparatus and method for modifying an object with electrons are provided, by which the object can be uniformly and efficiently modified with the electrons under a pressure substantially equal to atmospheric pressure even when having a relatively wide surface area to be treated. This method uses a cold-cathode electron emitter having the capability of emitting electrons from a planar electron emitting portion according to tunnel effect, and preferably comprising a pair of electrodes, and a strong field drift layer including nanocrystalline silicon disposed between the electrodes. The object is exposed to electrons emitted from the planar electron emitting portion by applying a voltage between the electrodes.

Method and apparatus for modifying object with electrons generated from cold cathode electron emitter

The present invention relates to an organic light emitting element comprising: a first light emitting unit comprising a light emitting layer between a pair of electrodes; and a second light emitting unit comprising a light emitting layer between a pair of electrodes. In the organic light emitting element, one electrode of the two pairs of electrodes which is positioned on the outermost side has light reflective properties, and the other electrodes have light transmission properties, while a light-transmitting insulating layer is provided between the first and second light emitting units. The insulating layer is formed in a thickness to prevent light emitted by the light emitting layer of the light emitting unit without the light reflective electrode from interfering with other lights, or formed to have properties of scattering the emitted light. Thus, the interference between the lights emitted by the light emitting layers and the other lights is reduced, so that in the organic light emitting element, the angular dependence of light emission spectrum is small, making it possible to adjust color.

Organic light emitting element and method of manufacturing the same

In an anodic oxidation apparatus and an anodic oxidation method and a panel for a display device manufactured by them, a large target substrate is treated by a smaller component. The anodic oxidation apparatus includes a lamp which emits light; a treatment bath which has a stage capable of mounting a target substrate thereon with a treatment part thereof directed upward and is provided at a position where the emitted light reaches and a frame located on the stage; a cathode electrode which is provided on the way of the emitted light to reach the mounted target substrate and includes an opening to allow the light to pass therethrough; a seal member which establishes a liquid sealing property between the frame and the mounted target substrate; a conductive contact member which is provided to be contactable with a plurality of electrode patterns formed on the target substrate outside an annular shape of the seal member and moves along side of the target substrate; and a current source which is electrically connected to the contact member and sets an output current value in accordance with the number of electrode patterns of the mounted target substrate in contact as the contact member moves.

Anodic oxidation apparatus

An infrared radiation element A heat insulating layer having sufficiently smaller thermal conductivity than a semiconductor substrate, is formed on a surface in the thickness direction of the semiconductor substrate. A heating layer, which is in the form of a lamina (plane) and has larger thermal conductivity and larger electrical conductivity than the heat insulating layer, is formed on the heat insulating layer. A pair of padsfor energization are formed on the heating layer. The semiconductor substrate is made of a silicon substrate. The heat insulating layer and the heating layer are formed by porous silicon layers having different porosities from each other, and the heating layer has smaller porosity than the heat insulating layer. By using the infrared radiation element as an infrared radiation source of a gas sensor, it becomes possible to extend a life of the infrared radiation source.

Infrared radiation element and gas sensor using it

A field emission-type electron source has a plurality of electron source elements () formed on the side of one surface (front surface) of an insulative substrate () composed of a glass substrate. Each of electron source elements () includes a lower electrode (), a buffer layer () composed of an amorphous silicon layer formed on the lower electrode (), a polycrystalline silicon layer () formed on the buffer layer (), a strong-field drift layer () formed on the polycrystalline silicon layer (), and a surface electrode () formed on the strong-field drift layer (). The field emission-type electron source can achieved reduced in-plain variation in electron emission characteristics.

Field emission-type electron source and method of producing the same

Disclosed is an electron sourceincluding an electron source elementformed on the side of one surface of an insulative substrate. The electron source elementincludes a lower electrode, a composite nanocrystal layerand a surface electrode. The composite nanocrystal layerincludes a plurality of polycrystalline silicon grains, a thin silicon oxide filmformed over the surface of each of the grains, a number of nanocrystalline siliconsresiding between the adjacent grains, and a silicon oxide filmformed over the surface of each of the nanocrystalline silicons. The silicon oxide filmis an insulating film having a thickness less than the crystal grain size of the nanocrystalline silicon. The surface electrodeis formed of a carbon thin filmlaminated on the composite nanocrystal layerwhile being in contact therewith, and a metal thin filmlaminated on the carbon thin film

Quantum device

In a field emission-type electron source (), a strong field drift layer () and a surface electrode () consisting of a gold thin film are provided on an n-type silicon substrate (). An ohmic electrode () is provided on the back surface of the n-type silicon substrate (). A direct current voltage is applied so that the surface electrode () becomes positive in potential relevant to the ohmic electrode (). In this manner, electrons injected from the ohmic electrode () into the strong field drift layer () via the n-type silicon substrate () drift in the strong field drift layer (), and is emitted to the outside via the surface electrode (). The strong field drift layer () has: a number of semiconductor nanocrystals () of nano-meter order formed partly of a semiconductor layer configuring the strong field drift layer (); and a number of insulating films () each of which is formed on the surface of each of the semiconductor nanocrystals () and each having film thickness to an extent such that an electron tunneling phenomenon occurs.

Field emission electron source and production method thereof

Disclosed is a method for the electrochemical oxidation of a semiconductor layer. In an electrochemical oxidation treatment for the production process of an electron source (field-emission type electron source) as one of electronic devices, a control section determines a voltage increment due to the resistance of an electrolytic solution B in advance, based on a detected voltage from a resistance detect section . Then, the control section controls a current source to supply a constant current so as to initiate an oxidation treatment for a semiconductor layer formed on an object . The control section corrects a detected voltage from a voltage detect section by subtracting the voltage increment therefrom. When the corrected voltage reaches a given upper voltage value, the control section is operable to discontinue the output of the current source and terminate the oxidation treatment. The present invention allows electronic devices to be produced with reduced variation in the characteristics thereof.

Method for electrochemical oxidation

An array of field emission electron sources and a method of preparing the array which discharges electrons from desired regions of a surface electrode of field emission electron sources. The field emission electron source comprises an electrically conductive substrate of p-type silicon substrate ; n-type regions of stripes of diffusion layers on one of principal surfaces of the p-type silicon substrate, strong electric field drift layers formed on the n-type regions which is made of oxidized porous poly-silicon for drifting electrons injected from the n-type region ; poly-silicon layers between the strong field drift layers ; surface electrodes of the stripes of thin conductive film formed in a manner to cross over the stripes of the strong field drift layer and the poly-silicon layers . By selecting a pair of the n-type regions and the surface electrodes and thereby making electron emitted from the crossing points due to combination of the surface electrode to be electrically applied and the n-type region to be electrically applied, electrons can be discharged from desired regions of the surface electrodes

Field emission electron source, method of producing the same, and use of the same

There is provided a field emission electron source at a low cost in which electrons can be emitted with a high stability and a high efficiency and a method of producing the same. In the field emission electron source, a strong electric field drift part is formed on the n-type silicon substrate on the principal surface thereof and a surface electrode made of a gold thin film is formed on the strong electric field drift part . And the ohmic electrode is formed on the back surface of the n-type silicon substrate . In this field emission electron source , when the surface electrode is disposed in the vacuum and a DC voltage is applied to the surface electrode which is of a positive polarity with respect to the n-type silicon substrate (ohmic electrode ), electrons injected from the n-type silicon substrate are drifted in the strong electric field drift part and emitted through the surface electrode . The strong electric field drift part comprises a drift region which has a cross section in the structure of mesh at right angles to the direction of thickness of the n-type silicon substrate , which is an electrically conductive substrate, and a heat radiation region which is filled in the voids of the mesh and has a heat conduction higher than that of the drift region

Field emission electron source

An electron source ( ) has an electron source element ( ) including a lower electrode ( ), a drift layer ( ) and a surface electrode ( ). The drift layer ( ) is interposed between the lower electrode ( ) and the surface electrode ( ). When a certain voltage is applied between the surface electrode ( ) and the lower electrode ( ) such that the surface electrode ( ) has a higher potential than that of the lower electrode ( ), a resultingly induced electric field allows electrons to pass through the drift layer ( ) and then the electrons are emitted through the surface electrode ( ). When a forward-bias voltage is applied between the surface electrode ( ) and the lower electrode ( ), a reverse-bias voltage is applied after the forward-bias voltage has been applied to release out of the drift layer ( ) an electron captured by a trap ( ) in the drift layer ( ).

Field emission-type electron source and method of biasing the same

A field emission-type electron source includes an insulative substrate in the form of a glass substrate having an electroconductive layer formed thereon. A strong electrical field drift layer in the form of an oxidized porous polycrystalline silicon layer is formed over the electroconductive layer . This electroconductive layer includes a lower electroconductive film , made of copper and formed on the insulative substrate , and an upper electroconductive film made of aluminum and formed over the electroconductive film . The strong electrical field drift layer is formed by forming a polycrystalline silicon layer on the electroconductive layer , rendering the polycrystalline silicon layer to be porous and finally oxidizing it. The upper electroconductive film has a property that reacts easily with silicon and, therefore, formation of an amorphous layer which would occur during formation of the polycrystalline silicon layer can be suppressed.

Field emission-type electron source and manufacturing method thereof

An electron source has an n-type silicon substrate , a drift layer formed on one surface of the substrate , and a surface electrode formed on the drift layer . A voltage is applied so that the surface electrode becomes positive in polarity relevant to the substrate , whereby electrons injected from the substrate into the drift layer drift within the drift layer , and are emitted through the surface electrode . In a process for manufacturing this electron source , when the drift layer is formed, a porous semiconductor layer containing a semiconductor nanocrystal is formed in accordance with anodic oxidation. Then, an insulating film is formed on the surface of each semiconductor nanocrystal. Anodic oxidation is carried out while emitting light that essentially contains a wavelength in a visible light region relevant to the semiconductor layer.

Method of and apparatus for manufacturing field emission-type electron source

A lower electrode ( ) and surface electrode ( ) composed of a layer-structured conductive carbide layer is formed on one principal surface side of the substrate ( ) composed of an insulative substrate such as a glass or ceramic substrate. A non-doped polycrystalline silicon layer ( ) is formed on the lower electrode ( ). An electron transit layer ( ) composed of an oxidized porous polycrystalline silicon is formed on the polycrystalline silicon layer ( ). The electron transit layer ( ) is composed of a composite nanocrystal layer including polycrystalline silicon and many nanocrystalline silicons residing adjacent to a grain boundary of the polycrystalline silicon. When voltage is applied between the lower electrode ( ) and the surface electrode ( ) such that the surface electrode ( ) has a higher potential, electrons are injected from the lower electrode ( ) toward the surface electrode ( ), and emitted through the surface electrode ( ) through the electron transit layer ( ).

Field emission-type electron source

In a field emission-type electron source ( ), lower electrodes ( ) made of an electroconductive layer, a strong field drift layer ( ) including drift portions ( ) made of an oxidized or nitrided porous semiconductor, and surface electrodes ( ) made of a metal layer are provided on an upper side of a dielectric substrate ( ) made of glass. When voltage is applied to cause the surface electrodes ( ) to be anodic with respect to the lower electrodes ( ), electrons injected from the lower electrodes ( ) to the strong field drift layer ( ) are led to drift through the strong field drift layer ( ) and are emitted outside through the surface electrodes ( ). A pn-junction semiconductor layer composed of an n-layer ( ) and a p-layer ( ) is provided between the lower electrode ( ) and the strong field drift layer ( ) to prevent a leakage current from flowing to the surface electrode ( ) from the lower electrode ( ), thereby reducing amount of power consumption.

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Sanda, Japan

Takuya Komoda