Kabushiki Kaisha Toshiba

Fuji Xerox Co., Ltd.

Takuya Kobayashi

Tomonori Aoyama

Katsuyuki Sekine

Hiroshi Tomita

Seiji Inumiya

Masaki Suto

Takashi Sato

Kazuaki Nakajima

Takashi Shimizu

Akio Kaneko

Daisuke Ikeno

Toshihiro Kanematsu

Hiroko Furukata

Yuki Kubota

Noribumi Sato

Junichi Uchiyama

Keiichi Okada

Naohisa Fujita

Hideyuki Ohtani

Yasutaka Goto

Shigeru Morimoto

An image forming apparatus includes an image forming device that forms an image on a recording medium with a powdery material, the image being sized so as to extend beyond an edge of the recording medium; a collecting device that collects the material that has extended off the recording medium as a result of the image forming device forming the image; and a restricting unit that controls the image forming device in such a manner that the image forming device reduces an amount of use of the material in a region of the image that extends off the recording medium to a larger degree on an outer side of the image than a side of the image near the recording medium.

Image forming apparatus

Provided is a charging unit including a charging member that is provided and comes in contact with a surface of an image holding member holding an image to charge the image holding member, a cleaning member that is provided and comes in contact with a surface of the charging member to clean the charging portion which is provided with an opening portion that opens in a direction intersecting rotating shafts of the charging member and the cleaning member, and which supports one end of the charging member is inserted through the opening portion to support the one end of the charging member, and a second support portion which is formed by being connected to the first support portion and which supports one end of the cleaning member which is inserted from the opening portion through the first support portion.

Charging unit, image forming apparatus, and charging unit support member

A cleaning device includes a cleaning member that comes into contact with a developer carrier, which carries developer, in a direction crossing a moving direction of the developer carrier and cleans the developer carrier by removing the developer from the developer carrier, a recovery section that is provided with a recovery port formed inside of end portions of the developer carrier in the direction crossing the moving direction of the developer carrier and recovers the developer, which is removed by the cleaning member, through the recovery port, and a guide member that guides the developer to the recovery port, one end of the guide member being positioned outside an end portion of the cleaning member and the end portion of the developer carrier, and the other end of the guide member being positioned inside the cleaning member in the direction crossing the moving direction of the developer carrier.

Cleaning device, image forming apparatus including the same and cleaning method

A semiconductor device according to an embodiment of the present invention includes an N-type transistor formed in a first region on a substrate, and a P-type transistor formed in a second region on the substrate. The device includes the substrate, a first gate insulation film formed on the substrate in the first and second regions, and containing silicon, a second gate insulation film formed on the first gate insulation film in the first region, and containing first metal and oxygen, a third gate insulation film formed on the first gate insulation film in the second region, and containing second metal different from the first metal and oxygen, a fourth gate insulation film formed on the second and third gate insulation films in the first and second regions, and containing hafnium, and a gate electrode layer formed on the fourth gate insulation film in the first and second regions, and containing metal and nitrogen, a thickness of the gate electrode layer formed in the second region being greater than a thickness of the gate electrode layer formed in the first region.

Semiconductor device and method of manufacturing the same

A semiconductor device includes a substrate having first and second regions on a surface thereof, a first conductivity type first MISFET formed in the first region and a second conductivity type second MISFET formed in the second region. The first MISFET includes a silicon oxide film or a silicon oxynitride film formed on the surface of the substrate and a first insulating film which is formed in contact with the silicon oxide film or the silicon oxynitride film and which has a first element forming electric dipoles that reduce a threshold voltage of the first MISFET and the second MISFET includes a silicon oxide film or a silicon oxynitride film formed on the surface of the substrate, and a second insulating film which is formed in contact with the silicon oxide film or the silicon oxynitride film formed on the surface of the substrate and which has a second element forming electric dipoles in a direction opposite to that in the first MISFET.

Semiconductor device having a high-dielectric-constant gate insulating film

A belt feed apparatus, includes: an endless belt member; a belt back surface member including a close portion disposed close to the endless belt member to such a degree that, when the endless belt member stands stationary, the close portion is prevented from touching the endless belt member, and while the endless belt member is circulating, the close portion can be contacted with the endless belt member irregularly; and a non-sticking portion that includes a non-sucking surface contactable with the endless belt member to prevent the endless belt member from being electrostatically sucked to the close portion, the non-sucking surface being provided in an entire portion or part of a surface of the close portion opposed to the endless belt member, and due to the existence of the non-sucking surface, the non-sticking portion being able to prevent the endless belt member from sticking to the close portion.

Belt feed apparatus and image forming apparatus using the same

A method of fabricating a semiconductor device according to one embodiment includes: forming a SiGe crystal layer on a semiconductor substrate, the SiGe crystal layer having a first plane and a second plane inclined with respect to the first plane; forming an amorphous Si film on the SiGe crystal layer; crystallizing a portion located adjacent to the first and second planes of the amorphous Si film by applying heat treatment using the first and second planes of the SiGe crystal layer as a seed, thereby forming a Si crystal layer; selectively removing or thinning a portion of the amorphous Si film that is not crystallized by the heat treatment; applying oxidation treatment to a surface of the Si crystal layer, thereby forming a gate insulating film on the surface of the Si crystal layer; and forming a gate electrode on the gate insulating film.

Semiconductor device and method of fabricating the same

According to an aspect of the present invention, there is provided a method for fabricating a semiconductor device, the method including: forming a first region and a second region in a substrate; forming the high-permittivity insulating film on the substrate in the first region and in the second region; forming a nitride film on the high-permittivity insulating film in the second region; forming a cap film on the high-permittivity insulating film in the first region and on the nitride film in the second region; forming a metal film on the cap film; and performing a heating process.

Complementary metal oxide semiconductor device fabrication method

A semiconductor device includes a semiconductor substrate, and a p-channel MOS transistor provided on the semiconductor substrate, the p-channel MOS transistor comprising a first gate dielectric film including Hf, a second gate dielectric film provided on the first gate dielectric film and including aluminum oxide, and a first metal silicide gate electrode provided on the second gate dielectric film.

CMOS semiconductor device

A method of manufacturing a semiconductor device includes forming a trench in an interlayer dielectric film on the semiconductor substrate, the trench reaching a semiconductor substrate and having a sidewall made of silicon nitride film; depositing a gate insulation film made of a HfSiO film at a temperature within a range of 200 degrees centigrade to 260 degrees centigrade, so that the HfSiO film is deposited on the semiconductor substrate which is exposed at a bottom surface of the trench without depositing the HfSiO film on the silicon nitride film; and filling the trench with a gate electrode made of metal.

Method of manufacturing semiconductor device

An image forming apparatus for forming an image on a recording medium, includes: a belt-like member that is capable of cyclic rotation; a plurality of support members, along which the belt-like member is stretched; a first member that is located along an inner face of the belt-like member; and a regulator that is located opposite the inner face of the belt-like member, wherein the regulator maintains a cyclic rotating state for the belt-like member while ensuring the first member is separated by a gap from the belt-like member.

Growing community of inventors

Yokohama, Japan

Takuya Kobayashi