Stanley Electric Co., Ltd

Takuya Kazama

Wataru Tamura

Yasuyuki Miyake

Atsushi Muramatsu

Kiyoshi Kanie

Kenji Moriyama

Toshihiko Baba

Junichi Sonoda

Keita Akiyama

Takayuki Omori

Single-phase manganese oxide particles having a wurtzite crystal structure. The particles can be obtained by thermally decomposing a compound containing manganese. In this procedure, a reducing agent consisting of at least one of a polyol-based material and an ethylene glycol stearate-based material is added as an additive to the reaction system. It is heated at a first temperature (200° C. or lower) under a reduced pressure atmosphere, then the temperature is raised, and the product is heated at a temperature higher than the first temperature under an inert gas atmosphere.

Wurtzite-type manganese oxide particles and method for producing same

A method for manufacturing Group-III nitride semiconductor nanoparticles includes synthesizing Group-III nitride semiconductor nanoparticles having a particle size of 16 nm or less by reacting materials containing one or more Group-III elements M in a liquid phase, wherein a coordination solvent is used, and trimethyl M is used as at least one Group-III element material among the materials containing one or more Group-III elements M.

Group-III nitride semiconductor nanoparticles, core-shell-type particles, and method for manufacturing same

A quantum dot includes a nano-seed particle having a particular crystal plane exposed, and a first epitaxial layer formed on the particular crystal plane of the nano-seed particle.

Quantum dot

Provided are group-III nitride nanoparticles that prevent the piezoelectric field caused by strains on the nanoparticles, achieving good luminous efficiency. The group-III nitride nanoparticle represented by AlGaInN (0&#x2264;x, y, z&#x2264;1) incorporating two crystal structures; a wurtzite structure and a zincblende structure, in a single particle. As another example, the group-III nitride nanoparticle has a core-shell structure with a core and a shell, in which the particle constituting the core contains two crystal structures; the wurtzite structure and the zincblende structure, in the particle. Nanoparticles containing the two crystal structures can be produced by using a phosphorus-containing solvent as a reaction solvent, and the mixture ratio of the two crystal structures, (wurtzite structure)/(zincblende structure), is 20/80 or higher.

Group-III nitride semiconductor nanoparticles and production method thereof

A quantum dot manufacturing method comprises (a) dispersing, in a solvent, nano-seed particles whose crystal planes are exposed, and (b) growing semiconductor layers on the exposed crystal planes of the nano-seed particles in the solvent.

Method for manufacturing quantum dot

A quantum dot having core-shell structure, including a core formed of ZnOSof wurtzite crystal structure of hexagonal crystal system; a first shell covering the core, and formed of AlGaInN of wurtzite crystal structure of hexagonal crystal system; and a second shell covering the first shell, and formed of ZnOSof wurtzite crystal structure of hexagonal crystal system. At least one of v, x, y, and z is not zero and is not one; differences between the lattice constants along a-axis of the core, the first shell and the second shell are not greater than 1%; and the core, the first shell and the second shell form band offset structure of type II.

Quantum dot having core-shell structure

A quantum dot having core-shell structure includes a core formed of ZnOS, and at least one shell covering the core, and formed of AlGaInN, wherein at least one of x, y, and z is not zero and is not one.

A semiconductor light emitting device comprises a supporting substrate that has light reflecting characteristics; a wavelength conversion layer that is disposed on the supporting substrate, and contains semiconductor nanoparticles developing a quantum size effect; an optical semiconductor laminate that is disposed on the wavelength conversion layer and has light emitting characteristics; and a photonic crystal layer that is disposed on the optical semiconductor laminate, and that has first portions having a first refractive index and second portions having a second refractive index different from the first refractive index, the first portions and the second portions being arranged in a two-dimensional cyclic pattern.

Semiconductor light emitting device

A semiconductor light-emitting element includes a support substrate, a semiconductor film including a light-emitting layer provided on the support substrate, a surface electrode provided on a light-extraction-surface-side surface of the semiconductor film, and a light-reflecting layer provided between the support substrate and the semiconductor film, forming a light-reflecting surface. The surface electrode includes a first electrode piece and a second electrode piece. The light-reflecting layer includes a reflection electrode including a third electrode piece and a fourth electrode piece. The first electrode piece and the third electrode piece are arranged so as to not overlap when projected onto a projection surface parallel to a principal surface of the semiconductor film, and the shortest distance between the first electrode piece and the fourth electrode piece, is greater than the shortest distance between the first electrode piece and the third electrode piece.

Semiconductor light-emitting element

A manufacturing method of a semiconductor element which can improve productivity and reliability, comprises a step of forming a device structure layer including a semiconductor layer on a first substrate; a step of forming a first metal layer on the device structure layer; a step of forming a second metal layer made of the same material as the first metal layer on a second substrate; a first treatment step of heating and compressing together the first metal layer and the second metal layer placed opposite to each other, thereby bonding them with maintaining a junction interface between the first and second metal layers; and a second treatment step of heating the first and second metal layers to make the junction interface disappear. Either one of the first and second metal layers has a coarse surface having multiple pyramid-shaped protrusions formed at its surface.

Semiconductor element and manufacturing method thereof

A semiconductor light emitting device comprises a first groove extending to a first semiconductor layer from a second semiconductor layer side through the second semiconductor layer and a light emitting layer; a first ohmic electrode formed in contact with the first semiconductor layer in the first groove; an insulating layer covering a surface of the second semiconductor layer and at least the surface of part of the light emitting layer exposed in the first groove; a metal layer covering the surface of the insulating layer and connected to the first ohmic electrode; a second groove extending from a first semiconductor layer side through the first semiconductor layer and the light emitting layer to the second semiconductor layer; a second ohmic electrode formed in contact with the second semiconductor layer in the second groove; and a support body bonded to the metal layer via a junction layer.

An optical semiconductor device includes a semiconductor support substrate of a conductivity type having a first resistivity, a semiconductor layer of the conductivity type formed on the semiconductor support substrate and having a second resistivity higher than the first resistivity, a first power supply terminal having a first metal in Schottky barrier contact with the semiconductor layer along with the semiconductor support substrate, so that a Schottky diode element is constructed by the first power supply terminal and the semiconductor layer along with the semiconductor support substrate, a second power supply terminal having a second metal in ohmic contact with the semiconductor support substrate, and a semiconductor light-emitting element connected between the first and second power supply terminals, the semiconductor light-emitting element being antiparallel with the Schottky diode with respect to the first and second power supply terminals.

Optical semiconductor device including antiparallel semiconductor light-emitting element and Schottky diode element

The light-emitting device includes a groove passing through a second semiconductor layer and a light-emitting layer to reach a first semiconductor layer; a first ohmic electrode in contact with the first semiconductor layer within the groove; a connection electrode passing through the first semiconductor layer from the surface thereof and electrically connected to the first ohmic electrode; an insulating layer for covering the second semiconductor layer on a surface thereof opposing the first semiconductor layer, the insulating layer having an opening; a second ohmic electrode in contact with the second semiconductor layer in the opening; a metal layer formed over the insulating layer, and connected to the second ohmic electrode; and a support bonded to the metal layer.

Semiconductor light-emitting device

A semiconductor light emitting element of the present invention includes a support substrate, a semiconductor film including a light emitting layer, a surface electrode provided on the surface on a light-extraction-surface side of the semiconductor film, and a light reflecting layer. The surface electrode includes first electrode pieces that form ohmic contact with the semiconductor film and a second electrode piece electrically connected to the first electrode pieces. The light reflecting layer includes a reflecting electrode, and the reflecting electrode includes third electrode pieces that form ohmic contact with the semiconductor film and a fourth electrode piece electrically connected to the third electrode pieces and placed opposite to the second electrode piece. Both the second electrode piece and the fourth electrode piece form Schottky contact with the semiconductor film so as to form barriers to prevent forward current in the semiconductor film.

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Tokyo, Japan

Takuya Kazama