Nippon Shokubai Co., Ltd.

Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Mitsubishi Heavy Industries Limited

Takuya Kamiyama

Tetsuya Yamamoto

Teruhiko Kumada

Hideharu Nobutoki

Naoki Yasuda

Yasutaka Nakatani

Takashi Abe

Toshihiko Nishimori

Tadashi Shimazu

Hidetaka Kafuku

Tatsuhiko Akiyama

Chiho Mizushima

Toshihito Fujiwara

Shinya Shibata

At least one embodiment of the present disclosure provides a hydrogenated silane composition containing a cyclic hydrogenated silane having high storage stability. The at least one embodiment of the present disclosure relates to a hydrogenated silane composition, wherein a content ratio of a linear hydrogenated silane having Si atoms of 5 or less to a cyclic hydrogenated silane having Si atoms of 5 to 7 is 0.009 or less, wherein the cyclic hydrogenated silane comprises at least cyclohexasilane, and further comprises at least one cyclic hydrogenated silane having a branched silyl group selected from silylcyclopentasilane and silylcyclohexasilane, and wherein a content ratio of a total of the silylcyclopentasilane and the silylcyclohexasilane to the cyclic hydrogenated silane having Si atoms of 5 to 7 is 10 ppb or more on a mass basis.

Hydrogenated silane composition

A composition for chemical vapor deposition film-formation comprising a borazine compound represented by the Chemical Formula 1 satisfying at least one of a condition that content of each halogen atom in the composition is 100 ppb or less or a condition that content of each metal element in the composition is 100 ppb or less. In the Chemical Formula 1, Rmay be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is hydrogen atom; Rmay be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is alkyl group, alkenyl group or alkynyl group. 

Composition for chemical vapor deposition film-formation and method for production of low dielectric constant film

An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device. A gas containing a raw material gas which gasified a predetermined alkylborazine compound is supplied in a chamber (); an electromagnetic wave is introduced into the chamber () using with an inductive coupling type plasma generation mechanism () to convert the gas into a plasma; a substrate () is placed in a plasma diffusion region of the plasma; gas-phase polymerization is performed with borazine skeletal molecules, as a fundamental unit, dissociated from the alkylborazine compound by the plasma so as to form the insulating film for semiconductor devices on the substrate ().

Insulating film for semiconductor device, process and apparatus for producing insulating film for semiconductor device, semiconductor device, and process for producing the semiconductor device

A low dielectric material is produced by using a composition including a borazine ring-containing compound and a compound represented by the following formula as a solvent, and/or by annealing a composition comprising a borazine ring-containing compound under atmosphere of oxygen concentration not higher than 0.1 vol % at 200 to 600&#xb0; C. In the following formula, Rand Rindependently represent alkyl group or acyl group; Rrepresents hydrogen atom or alkyl group; and n represents an integer of 1 to 5. 

Composition for low dielectric material, low dielectric material and method for production thereof

In a synthesis of a borazine compound by a reaction of an alkali boron hydride represented by ABH(A represents lithium atom, sodium atom or potassium atom) and an amine salt represented by (RNH)X (R represents a hydrogen atom or an alkyl group, X represents a sulfate group or a halogen atom, and n is 1 or 2), or b) diborane (BH) and an amine represented by RNH(R represents a hydrogen atom or an alkyl group), a water content of raw material is controlled below a prescribed value; mixed solvents containing solvents each having a prescribed boiling point are used as a solvent for reaction; or a raw material is gradually fed to a reactor in a reaction. Or, a borazine compound is subjected to distillation purification treatment and filtration treatment. By such a method, a high purity of borazine compound can be produced safely and in a high yield.

Method for producing borazine compound

In the process of synthesizing alkylborazine compound represented by the chemical formula 2, by a reaction of a halogenated borazine compound represented by the chemical formula 1 with a Grignard reagent, thus synthesized alkylborazine compound is washed with water, or subjected to sublimation purification or distillation purification at least three times, and/or subjected to distillation purification at least twice. In the formulas, Rindependently represents alkyl group; Rindependently represents alkyl group; and X represents halogen atom. 

Alkylborazine compound and production method for the same

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Takatsuki, Japan

Takuya Kamiyama