Semiconductor Energy Laboratory Co., Ltd.

Toshiba Memory Corporation

Takuya Hirohashi

Shunpei Yamazaki

Masahiro Takahashi

Junichiro Sakata

Hideyuki Kishida

Akiharu Miyanaga

Kengo Akimoto

Masashi Tsubuku

Masashi Oota

Masayuki Sakakura

Ryosuke Watanabe

Takashi Shimazu

Noritaka Ishihara

Shunsuke Adachi

Junichi Koezuka

Takahiro Kawakami

Yohei Momma

Teruaki Ochiai

Shuhei Yoshitomi

Mako Motoyoshi

Junya Goto

Teppei Oguni

Motoki Nakashima

Satoshi Seo

Hiroyuki Miyake

Hidekazu Miyairi

Kenichi Okazaki

Masami Jintyou

Koji Dairiki

Yasuharu Hosaka

Yasutaka Nakazawa

Toshimitsu Obonai

Takeshi Osada

Toshiyuki Isa

Tatsuya Ikenuma

Akihisa Shimomura

Yasuhiro Jinbo

Ryota Tajima

Yuta Endo

Masumi Saitoh

Takeyoshi Watabe

Minoru Takahashi

Tetsuya Kakehata

Toshihiko Takeuchi

Nobuhiro Inoue

Kunio Hosoya

Tetsunori Maruyama

Sachiaki Tezuka

Tamae Moriwaka

Yuki Imoto

Masaki Koyama

Takahisa Ishiyama

Yuya Matsubara

Harumi Seki

Erumu Kikuchi

Yuika Sato

Kazunori Harada

Takayuki Saito

Hiromichi Kuriyama

Noriaki Uto

Hiroyuki Tomisu

Hitomi Shionoya

To increase capacity per weight of a power storage device, a particle includes a first region, a second region in contact with at least part of a surface of the first region and located on the outside of the first region, and a third region in contact with at least part of a surface of the second region and located on the outside of the second region. The first and the second regions contain lithium and oxygen. At least one of the first region and the second region contains manganese. At least one of the first and the second regions contains an element M. The first region contains a first crystal having a layered rock-salt structure. The second region contains a second crystal having a layered rock-salt structure. An orientation of the first crystal is different from an orientation of the second crystal.

Particle, electrode, power storage device, electronic device, and method for manufacturing electrode

A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

Metal oxide film and method for forming metal oxide film

It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

Semiconductor device and method for manufacturing the same

A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nm&#x3c6; and less than or equal to 10 nm&#x3c6;.

It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

Oxide semiconductor film and semiconductor device

It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In&#x2014;Ga&#x2014;Zn&#x2014;O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In&#x2014;Ga&#x2014;Zn&#x2014;O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO(ZnO)(m=1) are included in an amorphous structure represented by InGaO(ZnO)(m&#x3e;0).

A highly reliable semiconductor device including an oxide semiconductor is provided. Provided is a semiconductor device including an oxide semiconductor layer, an insulating layer in contact with the oxide semiconductor layer, a gate electrode layer overlapping with the oxide semiconductor layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first region having a crystal whose size is less than or equal to 10 nm and a second region which overlaps with the insulating layer with the first region provided therebetween and which includes a crystal part whose c-axis is aligned in a direction parallel to a normal vector of the surface of the oxide semiconductor layer.

Metal oxide semiconductor device

Growing community of inventors

Atsugi, Japan

Takuya Hirohashi