Takuya Futase

Takashi Kobayashi

This disclosure relates to a low-resistance a multi-layer electrode and method of making a multi-layer electrode. Silicon is deposited on a substrate to form a top silicon layer. Nickel is deposited onto the top silicon layer to form a nickel layer. The substrate is annealed for a first time period and at a first temperature to form a di-nickel silicide layer with a remainder silicon layer between the di-nickel silicide layer and the substrate. Unreacted nickel of the nickel layer is removed to expose the di-nickel silicide layer. The substrate is annealed for a second time period and at a second temperature to form a nickel monosilicide layer from the di-nickel silicide layer and the remainder silicon layer such that the nickel monosilicide layer forms between a remainder di-nickel silicide layer and the substrate. The remainder di-nickel silicide layer and nickel monosilicide layer form a multi-layer electrode.

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Nagoya, Japan

Takuya Futase