Renesas Electronics Corporation

Other

Renesas Technology Corp.

Hitachi Ulsi Systems Co., Ltd.

Hitachi Ulsi Co., Ltd.

Takuya Futase

Tomonori Saeki

Mieko Kashi

Shigenari Okada

Takeshi Hayashi

Yutaka Inaba

Hiroshi Tobimatsu

Shuhei Murata

Tadashi Yamaguchi

Hidenori Suzuki

Keiichiro Kashihara

Hideaki Tsugane

Mitsuo Kimoto

The present invention improves the performance of a semiconductor device wherein a metal silicide layer is formed through a salicide process. A metal silicide layer is formed over the surfaces of first and second gate electrodes, n-type semiconductor regions, and p-type semiconductor regions through a salicide process of a partial reaction type without the use of a salicide process of a whole reaction type. In a heat treatment for forming the metal silicide layer, by heat-treating a semiconductor wafer not with an annealing apparatus using lamps or lasers but with a thermal conductive annealing apparatus using carbon heaters, a thin metal silicide layer is formed with a small thermal budget and a high degree of accuracy and microcrystals of NiSi are formed in the metal silicide layer through a first heat treatment.

Manufacturing method of semiconductor device

In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).

Mass production method of semiconductor integrated circuit device and manufacturing method of electronic device

Reliability of a semiconductor element and its product yield are improved by reducing variations in the electrical characteristic of a metal silicide layer. After forming a nickel-platinum alloy film over a semiconductor substrate, by carrying out a first thermal treatment at a thermal treatment temperature of 210 to 310&#xb0; C. using a heater heating device, the technique causes the nickel-platinum alloy film and silicon to react with each other to form a platinum-added nickel silicide layer in a (PtNi)Si phase. After removing unreacted nickel-platinum alloy film, the technique carries out a second thermal treatment having the thermal treatment temperature higher than that of the first thermal treatment to form the platinum-added nickel silicide layer in a PtNiSi phase. The temperature rise rate of each thermal treatment is set to 10&#xb0; C./s or more.

Method of manufacturing a semiconductor device

When a natural oxide film is left at the interface between a metal silicide layer and a silicon nitride film, in various heating steps (steps involving heating of a semiconductor substrate, such as various insulation film and conductive film deposition steps) after deposition of the silicon nitride film, the metal silicide layer partially abnormally grows due to oxygen of the natural oxide film occurring on the metal silicide layer surface. A substantially non-bias (including low bias) plasma treatment is performed in a gas atmosphere containing an inert gas as a main component on the top surface of a metal silicide film of nickel silicide or the like over source/drain of a field-effect transistor forming an integrated circuit. Then, a silicon nitride film serving as an etching stop film of a contact process is deposited. As a result, without causing undesirable cutting of the metal silicide film, the natural oxide film over the top surface of the metal silicide film can be removed.

Method for manufacturing a semiconductor integrated circuit device

An object of the invention is to avoid an inconvenience at a connection portion formed by filling a metal film in a connecting hole, which has been opened in an insulating film, via a barrier metal film having a titanium nitride film stacked over a titanium film. A manufacturing method of a semiconductor device has the steps of: forming a thermal reaction Ti film over the bottom of a connecting hole by a thermal reaction using a TiClgas; forming a plasma reaction Ti film by a plasma reaction using a TiClgas; forming a nitrogen-rich TiN film over the surface of the plasma reaction Ti film by plasma treatment with Hand plasma treatment with NHgases; repeatedly carrying out film formation by CVD using a WFgas and reduction using an SiHor BHgas to form a tungsten nucleation film of a multilayer structure over the nitrogen-rich TiN film; and forming a blanket&#x2022;tungsten film at 400&#xb0; C. or less by CVD using WFand Hgases. This makes it possible to avoid an inconvenience at a connection portion formed by filling a metal film in a connecting hole, which has been opened in an insulating film, via a barrier metal film having a titanium nitride film stacked over a titanium film.

To provide a semiconductor device with improved reliability which includes a metal silicide layer formed by a salicide process. After forming gate electrodes, an n-type semiconductor region, and a p-type semiconductor region for a source or drain, a NiPtalloy film is formed over a semiconductor substrate. The alloy film reacts with the gate electrodes, the n-type semiconductor region, and the p-type semiconductor region by a first heat treatment to form a metal silicide layer in a (NiPt)Si phase. At this time, the first heat treatment is performed at a heat treatment temperature where a diffusion coefficient of Ni is larger than that of Pt. Further, the first heat treatment is performed such that a reacted part of the alloy film remains at the metal silicide layer. This results in y&#x3e;x. Then, after removing the unreacted part of the alloy film, the metal silicide layer is further subjected to a second heat treatment to form a metal silicide layer in a NiPtSi phase.

Method of manufacturing semiconductor device

To provide a technique capable of improving the reliability of a semiconductor element and its product yield by reducing the variations in the electrical characteristic of a metal silicide layer. After forming a nickel-platinum alloy film over a semiconductor substrate, by carrying out a first thermal treatment at a thermal treatment temperature of 210 to 310&#xb0; C. using a heater heating device, the technique causes the nickel-platinum alloy film and silicon to react with each other to form a platinum-added nickel silicide layer in a (PtNi)Si phase. Subsequently, after removing the unreacted nickel-platinum alloy film, the technique carries out a second thermal treatment having the thermal treatment temperature higher than that of the first thermal treatment to form the platinum-added nickel silicide layer in a PtNiSi phase. The temperature rise rate of the first thermal treatment is set to 10&#xb0; C./s or more (for example, 30 to 250&#xb0; C./s) and the temperature rise rate of the second thermal treatment is set to 10&#xb0; C./s or more (for example, 10 to 250&#xb0; C./s).

To provide a technology capable of improving reliability and manufacturing yield of a semiconductor device by reducing variations of electrical characteristics in connection hole portions. After a semiconductor wafer is placed over a wafer stage provided in a chamber for dry cleaning treatment of a deposition system, dry cleaning treatment is performed to a principal surface of the semiconductor wafer by supplying reducing gas, sequentially, heat treatment is performed to the semiconductor wafer at a first temperature of 100 to 150&#xb0; C. by a showerhead which is maintained at 180&#xb0; C. Next, after the semiconductor wafer is vacuum transferred from the chamber to a chamber for heat treatment, heat treatment is performed to the semiconductor wafer at a second temperature of 150 to 400&#xb0; C. in the chamber, thereby removing a product remaining over the principal surface of the semiconductor wafer.

The present invention is to possible to avoid an inconvenience at a coupling portion between a barrier metal film obtained by depositing a titanium nitride film on a titanium film and thus having a film stack structure and a metal film filled, via the barrier metal film, in a connecting hole opened in an insulating film. The manufacturing method of a semiconductor device includes the steps of: forming a contact hole and exposing a nickel silicide layer from the bottom of the contact hole; forming a thermal reaction Ti film by a thermal reaction using a TiClgas, forming a plasma reaction Ti film by a plasma reaction using a TiClgas, carrying out plasma treatment with an Hgas to decrease the chlorine concentration of the plasma reaction Ti film and at the same time to reduce an oxide film on the surface of the nickel silicide layer; forming a nitrogen-rich TiN film over the surface of the plasma reaction Ti film and at the same time reducing the oxide film on the surface of the nickel silicide layer by thermal nitridation treatment with an NHgas and plasma treatment with an NHgas.

Manufacturing method of semiconductor device including filling a connecting hole with metal film

To solve a problem that it becomes difficult to lower contact resistance between nickel-based metal silicide and metal for contact as the result of the miniaturization of the hole. One invention of the present application is a method of manufacturing a semiconductor integrated circuit device having a MISFET subjected to silicidation of a source/drain region and the like by nickel-based metal silicide, the method performing a heat treatment for the upper surface of a silicide film in a non-plasma reducing vapor phase atmosphere containing a gas having a nitrogen-hydrogen bond as one of main gas components, before forming a barrier metal at a contact hole provided at a pre-metal insulating film.

Method of manufacturing semiconductor integrated circuit device

After gate insulating films, gate electrodes, and ntype semiconductor regions and ptype semiconductor regions for source/drain are formed, a metal film and a barrier film are formed on a semiconductor substrate. And a first heat treatment is performed so as to make the metal film react with the gate electrodes, the ntype semiconductor region, and the ptype semiconductor region, thereby forming a metal silicide layer formed of a monosilicide of a metal element forming the metal film. After that, the barrier film and the unreacted metal film are removed, and then a second heat treatment is performed to stabilize the metal silicide layer. The heat treatment temperature is made lower than a temperature at which a lattice size of a disilicide of the metal element and that of the semiconductor substrate become same.

Growing community of inventors

Tokyo, Japan

Takuya Futase