Hamamatsu-photonics K.k.

Ntn Corporation

Takuya Fujita

Koei Yamamoto

Takashi Baba

Kenji Makino

Jun Numamoto

Yusei Tamura

Tatsuro Sugiyama

Terumasa Nagano

Masazumi Kobayashi

Shinya Iwashina

Shunsuke Adachi

Masanori Okada

Kenichi Nakano

Shintaro Suzuki

Akira Sera

Hiroshi Matsunaga

Naoki Nakagawa

Renji Natsume

Kiyohiro Suzuki

In a light detection device, switches are connected in parallel to each other. Each of the switches is connected to an APD. A read line electrically connects the switch and a signal processor to each other. The switch is configured such that a second terminal is connected to the read line and a voltage greater than or equal to a breakdown voltage is applied to the APD in a conductive state. The switch is configured such that the second terminal is not connected to the read line and a voltage greater than or equal to a breakdown voltage is applied to the APD in the conductive state. The switch is configured such that the second terminal is not connected to the read line and a voltage less than a breakdown voltage is applied to the APD in the conductive state.

Light detection device

In a light detection device, each pixel includes a plurality of APDs. Each APD forms a light receiving region and is configured to operate in a Geiger mode. The plurality of APDs forms a plurality of light receiving regions arranged in a direction along a main surface in a pixel area α occupied by a corresponding pixel among a plurality of pixels. The MOS switch circuit region overlaps with the plurality of light receiving regions when viewed from a Z-axis direction. When viewed from the Z-axis direction, the area of the MOS switch circuit region is greater than the area of one light receiving region formed in the pixel area, and less than or equal to the area of the pixel area. A plurality of APDs included in each pixel is electrically connected in parallel to each other and each is connected to a MOS switch circuit.

Light detection device with a plurality of avalanche photodiodes and MOS switch circuits

A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.

Photodetector device having avalanche photodiodes two-dimensionally arranged on a semiconductor layer and quenching element connected in series to the photodiodes

A forging apparatus includes an ironing mechanism and a phase alignment mechanism. The ironing mechanism includes: a punch set, which is fitted into a cylindrical portion of a pre-processing material to be formed into the outer joint member, and is radially expandable and contractible, the cylindrical portion having grooves formed in an inner peripheral surface thereof; and a die having a hole into which the cylindrical portion is press-fitted. The phase alignment mechanism is configured to align phases of the grooves in the inner peripheral surface of the pre-processing material and phases of track groove portion forming surfaces of the punch set with each other before the pre-processing material is fitted to the punch set.

Forging device and forging method for outer joint member of constant-velocity universal joint

Photodetector device having avalanche photodiodes two-dimensionally arranged on a compound semiconductor layer and quenching element connected in series to the photodiodes

Photodetector device comprising each of a plurality of passive quenching elements connected in series to at least one avalanche photodiode and a capacitative element connected in parallel to the passive quenching element

For butt-welding, which includes bringing joining end surfaces of a cup member and a shaft member into abutment against each other and radiating a high energy intensity beam from a radially outer side, the shaft member has a recess on a radially inner side of the joining end surface to obtain a welded portion having a closed hollow cavity on a radially inner side after butt-welding. The joining end surface (protruding surface) of the cup member protrudes toward a radially inner side with respect to an inner diameter of the joining end surface of the shaft member. With this, a welded portion of an outer joint member of a constant velocity universal joint, which is manufactured by joining the cup member and the shaft member, can be improved in strength and quality.

Method for butt welding, butt welded joint, and outside joint member for constant velocity universal joint

A cup member has a cylindrical portion, a bottom portion, and a short shaft portion having a solid shaft shape and including a joining end surface at an end portion thereof. A shaft member has a solid shaft shape and includes a joining end surface at one end thereof. The joining end surfaces of the cup and shaft members are brought into abutment against each other and welded from a radially outer side to form a welded portion. At this time, center segregation is prevented from interfering with the welded portion. The cup member is formed by forging including upsetting a billet having a columnar shape successively in a plurality of stages, extruding the cylindrical portion and the short shaft portion, and ironing the cylindrical portion. In the course of the upsetting, a region of the billet corresponding to a bottom side of the cup member is narrowed.

Constant velocity universal joint outer joint member and manufacturing method for same

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Hamamatsu, Japan

Takuya Fujita