Tdk Corporation

Takuya Ashida

Tatsuo Shibata

Tomoyuki Sasaki

Yohei Shiokawa

A magnetic domain wall movement element according to the present embodiment includes a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer that are laminated in an order from a side close to a substrate. On a cross-section along a lamination direction and a second direction orthogonal to a first direction in which the first ferromagnetic layer extends in a plan view from the lamination direction, a shortest width of the first ferromagnetic layer in the second direction is shorter than a width of the nonmagnetic layer in the second direction.

Magnetic domain wall movement element and magnetic recording array

A magnetic domain wall movement element includes a wiring layer containing a ferromagnetic material, a non-magnetic layer in contact with the first surface of the wiring layer, a first conductive layer connected to the first surface of the wiring layer and containing a ferromagnetic material; and a second conductive layer connected to the wiring layer at a distance from the first conductive layer. A first part of the connection face of the first conductive layer is directly connected to the wiring layer, and a second part of the connection face other than the first part is connected to the wiring layer via the non-magnetic layer.

A spin-orbit-torque type magnetization rotating element includes: a spin-orbit torque wiring extending in a first direction; and a first ferromagnetic layer laminated on the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a metal oxide whose electrical conductivity properties exhibit a metallic behavior with respect to temperature, and an oxygen concentration in a region on the first ferromagnetic layer side and an oxygen concentration in a region opposite to the first ferromagnetic layer are asymmetrical with respect to a center of the spin-orbit torque wiring in a thickness direction thereof.

Spin-orbit-torque type magnetization rotating element, spin-orbit-torque type magnetoresistance effect element, and magnetic memory

A magnetic recording array includes: a plurality of domain wall moving elements; a first wiring which is electrically connected to a reference potential and is electrically connected to at least one domain wall moving element of the plurality of domain wall moving elements; a second wiring which is electrically connected to at least two or more domain wall moving elements of the plurality of domain wall moving elements; a first switching element which is connected between each of the domain wall moving elements and the first wiring; and a second switching element which is connected between each of the domain wall moving elements and the second wiring, wherein an OFF resistance of the first switching element is smaller than an OFF resistance of the second switching element.

Magnetic recording array and magnetic recording device

A magnetic domain wall movement element includes a first ferromagnetic layer, a magnetic recording layer, a nonmagnetic layer, a first electrode, and a second electrode. The magnetic recording layer includes: a first region which overlaps with the first electrode and the first ferromagnetic layer in a first direction; a second region which overlaps with the second electrode and the first ferromagnetic layer in the first direction; and a third region which is located between the first region and the second region. An area of a first section in the first region facing the first electrode is larger than an area of a second section in the second region facing the second electrode. The first ferromagnetic layer overlaps with a part of the first electrode and a part of the second electrode in the first direction.

Growing community of inventors

Tokyo, Japan

Takuya Ashida