Tdk Corporation

Toppan Printing Co., Ltd.

Yamaha Robotics Co., Ltd.

Yamaha Robotics Holdings Co., Ltd.

Takuya Adachi

Hiroshi Munakata

Hiroshi Ikeda

Isamu Sato

Michael Kirkby

Sukenori Ito

Atsushi Yuzawa

Masaaki Takada

Yoshikazu Soeno

Noboru Yamanaka

Tomoyuki Goi

Yuji Kawamura

Etsuo Shimamura

Tomoyuki Sasaki

Kenji Inoue

Tetsuya Roppongi

Kiyoshi Noguchi

Mikio Matsuzaki

Tsutomu Aoyama

Hideki Yamamoto

Taku Takeishi

Noriyuki Sasaki

Hitoyoshi Kurata

Yoshiaki Take

Hitoshi Hachiga

Masami Itakura

Takahisa Hirayama

Kiichiro Okano

Shota Nakano

Akihiro Shiosaka

Yoshihiro Akima

Atsuhi Ajioka

Choyekh Mahdi

Landaez Ysmaldo

Hiromitsu Uchiyama

Masaru Kurihara

Masaki Tomihari

Provided is a transfer apparatus. The transfer apparatus includes, in addition to a non-contact chuck that lifts and holds a workpiece in a non-contact manner, a plurality of ultrasonic vibrators that radiate ultrasonic waves. The plurality of ultrasonic vibrators are configured to radiate the ultrasonic waves to generate a standing wave that attracts the workpiece, and are configured for the non-contact chuck to hold the workpiece at a position where forces attracting in a plurality of directions toward outside of the workpiece are balanced when viewed from a direction facing the workpiece.

Transfer apparatus capable of suppressing side slip of workpiece lifted by non-contact chuck

A defect detection device () that detects defects in a semiconductor device () comprises ultrasonic speakers () that ultrasonically vibrate the semiconductor device (), a laser source () that irradiates the semiconductor device () with collimated laser light (), a camera () that has an imaging element () which acquires images by imaging the semiconductor device () that has been irradiated with the collimated laser light (), and a detection unit () that detects defects in the semiconductor device () on the basis of the images picked up by the camera (), wherein the detection unit () detects defects in the semiconductor device () on the basis of the deviation between images acquired by the camera () of the semiconductor device () when static and when ultrasonically vibrated.

Defect detection device and defect detection method

Provided is a wire bonding state determination device which determines a bonding state between a pad and a wire after the wire is bonded to the pad. The wire bonding state determination device includes: a waveform detector which makes an incident wave incident to the wire, and detects a transmission waveform of the wire and a reflection waveform from a first bonding surface between the pad and the wire; and a bonding determination unit which determines the bonding state between the pad and the wire based on the transmission waveform and the reflection waveform detected by the waveform detector.

Wire bonding state determination method and device using a prescribed electric waveform

A defect detection device () which detects a defect of a semiconductor device () includes: a standing wave generator (), applying a standing wave () to the semiconductor device () to apply a suction force to a wire (); cameras (); and a control part (), adjusting an operation of a standing wave generator () and performing defect detection on the semiconductor device (). The control part () captures, by using the cameras (), a first image of the semiconductor device () of a first state in which the suction force is applied to the wire () and a second image of the semiconductor device () of a second state in which the suction force applied to the wire () is smaller than the first stage, and compares the first image and the second image to perform defect detection.

An ultrasound vibrating-type defect detection apparatus () for detecting a defect in a semiconductor apparatus () is provided with: an ultrasound vibrator (); a high-frequency power supply (); a camera (); and a controller () for adjusting the frequency of high-frequency power supplied from the high-frequency power supply () to the ultrasound vibrator (), and for performing detection of a defect in the semiconductor apparatus (). The controller () causes the camera () to capture an image of the semiconductor apparatus () while varying the frequency of high-frequency power supplied from the high-frequency power supply () to the ultrasound vibrator (), and performs detection of a defect in the semiconductor apparatus () on the basis of the captured image.

Ultrasound vibrating-type defect detection apparatus and wire defect detection system

A magnetic head includes a microwave-generating element connected to a ground line. The ground line is made shorter by connecting the ground line to a conductive slider substrate so that the microwave-generating element is in a nearly short-circuited end condition. This allows a microwave excitation current to be efficiently supplied to the microwave-generating element, thus enabling effective microwave-assisted recording.

Magnetic head with microwave-generating element and ground line therefor

A head gimbal assembly includes a magnetic head slider provided with a recording head element that applies a recording magnetic field to a magnetic recording medium and a suspension that supports the magnetic head slider. The magnetic head slider further includes a microwave radiation element that radiates a microwave magnetic field from a microwave excitation current that is supplied from a microwave generating circuit, and that applies the microwave magnetic field to the magnetic recording medium when the recording head element applies the recording magnetic field to the magnetic recording medium. The suspension includes a microwave transmission line that transmits the microwave excitation current, and the microwave transmission line is provided with a matching circuit to achieve impedance matching with the microwave radiation element.

Head gimbal assembly for microwave-assisted magnetic recording in impedance matching between microwave radiation element and microwave transmission line

A gap between a main pole and auxiliary pole composing a thin film magnetic head having a microwave assisted function of the present invention is filled with a nonmagnetic dielectric layer to embed a microwave radiator. The nonmagnetic dielectric layer has an inclined surface at a end on a side of an opposing medium surface by which the microwave radiated from the microwave radiator to be bent toward the main pole, whereby the microwave magnetic field generated from the microwave generator can be gathered immediately below the main pole, further improving the microwave assisted effect.

Microwave assisted magnetic head

A microwave assisted magnetic head is formed to include a main pole magnetic layer including a main pole; a shielded magnetic layer including a shielded pole; a recording coil that is formed to generate a writing magnetic field from a tip of the main pole; and a microwave radiation waveguide made of a conductive nonmagnetic material that is disposed in a recording gap, the recording gap being a gap between the main pole and the shielded pole. The main pole magnetic layer and the shielded magnetic layer have an intermediate connection part that connects the layers at a depth-side, and an electrical insulation magnetic film is disposed in the intermediate connection part, and the main pole and the shielded pole are electrically connected with the microwave radiation waveguide that is disposed in the recording gap, which is the gap between the main pole and the shielded pole so that a simple configuration, with a relatively easy and efficient manufacturing process, is realized that overlaps AC magnetic fields in an in-plane direction of a microwave band, which is the same as, or close to, a ferromagnetic resonant frequency of a medium recording layer.

A magnetic recording apparatus includes a magnetic recording medium having a magnetic recording layer, a thin-film magnetic head with a microwave-band magnetic drive function, the head having a write field generation means that generates a write field to the magnetic recording medium in response to a write signal, and a microwave generator that is provided independent of the write field generation means and generates an alternating magnetic field in plane having a microwave-band frequency when microwave-excitation current is fed, an excitation current generation means that generates the microwave-excitation current by amplitude-modulating microwave carrier current with a modulating signal having a fixed period, and a write signal supply means that generates the write signal and applies it to the write field generation means of the thin-film magnetic head.

Magnetic recording apparatus provided with microwave-assisted head

A measurement circuit system of a magnetic field measurement apparatus of the present invention includes an amplifier, a mixer circuit and a band-pass filter that are connected in order on an output end side of a microstrip line or a coplanar wave guide, which is an in-plane high frequency magnetic field intensity measurement element, a frequency immediately before being inputted in the band-pass filter is down-converted by the mixer circuit to a frequency so that a band width of the band-pass filter can be used, the band-pass filter uses a narrow band of &#xb1;0.5-&#xb1;10 KHz (1 KHz-20 KHz as a bandwidth) centering a fundamental frequency selected from 5-20 MHz that is down-converted by the mixer circuit as a center peak passing frequency, and the measurement circuit system is configured to obtain 3 dB or greater of a signal-to-noise ratio (SNR) that is a ratio of S with N; where S represents the reproduction voltage (reproduction output) of the high frequency reproduction signal induced by the in-plane high frequency magnetic field intensity measurement element, and N represents a total noise voltage of a circuit noise including a noise generated by the in-plane high frequency magnetic field intensity measurement element. Therefore, the in-plane high frequency magnetic field that a microwave-assisted magnetic head generates can be measured with high reliability and precision.

Apparatus for measuring magnetic field of microwave-assisted head

The present invention is provided with a high frequency module comprising a multilayered substrate, a power amplifier IC mounted on the upper surface of the multilayered substrate, first and second filters disposed substantially directly below the power amplifier IC in an inner layer of the multilayered substrate, and coupling-reducing ground vias disposed between the first filter and the second filter. At least the first filter is disposed substantially directly below the power amplifier IC. The coupling-reducing ground vias double as thermal vias for dissipating heat generated by the power amplifier IC.

High frequency module provided with power amplifier

At least one of a rise time and a fall time of a dielectric resonator oscillator are reduced. The dielectric resonator oscillator includes a dielectric resonator, a drive circuit for applying a resonance voltage to the dielectric resonator, a switch for applying a voltage required for generating the resonance voltage to the drive circuit, a switch for applying a ground voltage for stopping generation of the resonance voltage to the drive circuit, and a capacitor connected to a power terminal side that supplies a voltage, as seen from the switch, for removing noise generated by the drive circuit. If these switches are made conductive exclusively, oscillation can be stopped immediately by turning on the switch. Since the capacitor is in a charge storage state at all times, regardless of ON/OFF of the switch, the oscillation operation can be started immediately when the switch is turned ON.

Dielectric resonator oscillator and radar apparatus using the same

A high frequency switch module comprises an antenna port, a plurality of transmission signal ports, a plurality of reception signal ports, a high frequency switch, a plurality of LPFs and a plurality of phase adjusting lines. The high frequency switch allows one signal port among the transmission signal ports and the reception signal ports to be selectively connected to the antenna port. The high frequency switch includes a field-effect transistor made of a GaAs compound semiconductor. Each of the phase adjusting lines connects the high frequency switch to each of the LPFs. Each of the phase adjusting lines adjusts a phase difference between a progressive wave of a harmonic resulting from a transmission signal and produced at the high frequency switch and a reflected wave resulting from reflection of the progressive wave from each of the LPFs such that the power of a composite wave made up of the progressive wave and the reflected wave is made lower at the point of the high frequency switch.

High frequency switch module and multi-layer substrate for high frequency switch module

An electronic component according to an embodiment of the present invention comprises a resonator, a mounting substrate, and an electric connection member. The resonator has a terminal. The mounting substrate has a first principal surface, a second principal surface opposite to the first principal surface, and an electrode provided in a hole intersecting with the second principal surface. The electric connection member electrically connects the electrode of the mounting substrate to the terminal of the resonator. One end of the electrode of the mounting substrate is provided along the second principal surface. The electric connection member is provided on the one end of the electrode of the mounting substrate. The resonator is provided on the electric connection member so that the terminal of the resonator is in contact with the electric connection member.

Growing community of inventors

Tokyo, Japan

Takuya Adachi