Tokyo Electron Limited

Takuya Abe

Akitaka Shimizu

Hidenori Miyoshi

Masahiko Tomita

Hiroyuki Takahashi

Satoshi Toda

Reiko Sasahara

Koichi Nagakura

Tsuhung Huang

Kenshiro Asahi

Ken Nakagomi

Tomoaki Ogiwara

Jiro Katsuki

Yoshie Ozawa

Kenichi Nakahata

There is provided an etching method including: a step of disposing a substrate in a chamber, the substrate having a silicon nitride film, a silicon oxide film, a silicon, and a silicon germanium; a step of setting a pressure in the chamber to 1,333 Pa or more; and a step of selectively etching the silicon nitride film with respect to the silicon oxide film, the silicon, and the silicon germanium by supplying a hydrogen fluoride gas into the chamber.

Etching method

There is provided an etching method including: loading a substrate having a recess and an etching target portion existing on an inner surface of the recess into a processing container, the etching target portion being made of SiN or Si; preferentially modifying a surface of the etching target portion at a top portion of the recess by performing an oxygen-containing plasma process on the substrate inside the processing container; and subsequently, dry-etching the etching target portion in an isotropic manner.

Etching method and etching apparatus

There is provided a substrate processing method for removing an oxide film formed on a surface of a substrate. The method includes (a) transforming the oxide film into a reaction by-product by supplying a halogen element-containing gas and a basic gas to the substrate accommodated in a processing chamber; and (b) sublimating the reaction by-product to remove the reaction by-product from the substrate by stopping the supply of the halogen element-containing gas into the processing chamber and supplying an inert gas into the processing chamber. The steps (a) and (b) are repeated a plurality of times.

Substrate processing method and substrate processing apparatus

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Nirasaki, Japan

Takuya Abe